Oxidizable electrode induced bipolar resistive switching behavior in TE/CdZnTe/Pt structure
TE/CdZnTe/Pt/Ti/SiO 2 /Si structures (top electrode TE = Au, Pt, Al, Ti and Cu) were fabricated by magnetron sputtering and thermal evaporation. Bipolar resistive switching behavior was observed in TE/CdZnTe/Pt/Ti/SiO 2 /Si structure when TE is Al, Ti or Cu, but Pt or Au as TE in TE/CdZnTe/Pt device...
Gespeichert in:
| Veröffentlicht in: | Journal of materials science. Materials in electronics 2021-04, Vol.32 (8), p.10809-10819 |
|---|---|
| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 10819 |
|---|---|
| container_issue | 8 |
| container_start_page | 10809 |
| container_title | Journal of materials science. Materials in electronics |
| container_volume | 32 |
| creator | Wang, Aoqiu Zhang, Jiakui Zha, Gangqiang Xu, Lingyan Jie, Wanqi |
| description | TE/CdZnTe/Pt/Ti/SiO
2
/Si structures (top electrode TE = Au, Pt, Al, Ti and Cu) were fabricated by magnetron sputtering and thermal evaporation. Bipolar resistive switching behavior was observed in TE/CdZnTe/Pt/Ti/SiO
2
/Si structure when TE is Al, Ti or Cu, but Pt or Au as TE in TE/CdZnTe/Pt device showed no resistive switching. The interfacial layer-dominated model was proposed to explain the presence of resistive switching behavior in TE/CdZnTe/Pt device due to oxidizable electrodes. The role of the CdZnTe film is a series resistor after the forming process. Space charge-limited current model was used to analyze the conduction mechanism and ~ 10
19
cm
−3
trap density in the interfacial layer was calculated by fitting the current–voltage curve. The device properties including voltage parameter distribution, retention property and endurance property were tested, respectively. The Al/CdZnTe/Pt/Ti/SiO
2
/Si structure has a good potential as resistive switching random access memory with over 10
3
ON/OFF ratio and at least 10
3
s retention time. |
| doi_str_mv | 10.1007/s10854-021-05739-3 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2518562458</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2518562458</sourcerecordid><originalsourceid>FETCH-LOGICAL-c319t-74a0bc2ddf506fbfa8c06e5587424bc440082febfc96b3b17c79e9a59f13caf23</originalsourceid><addsrcrecordid>eNp9kEtLAzEUhYMoWKt_wFXAdWye81hKqQ8o1EUF0UVIMjdtyjhTk5n6-PWOVnDn6p7Fd86FD6FzRi8ZpfkkMVooSShnhKpclEQcoBEbEpEFfzxEI1qqnEjF-TE6SWlDKc2kKEboefEeqvBpbA0YanBdbCvAoal6BxW2YdvWJuIIKaQu7ACnt9C5dWhW2MLa7EIbBxgvZ5Np9dQsYXLf4dTF3nV9hFN05E2d4Oz3jtHD9Ww5vSXzxc3d9GpOnGBlR3JpqHW8qryimbfeFI5moFSRSy6tk5LSgnuw3pWZFZblLi-hNKr0TDjjuRiji_3uNravPaROb9o-NsNLzRUrVMalKgaK7ykX25QieL2N4cXED82o_pao9xL1IFH_SNRiKIl9KQ1ws4L4N_1P6wslqHZC</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2518562458</pqid></control><display><type>article</type><title>Oxidizable electrode induced bipolar resistive switching behavior in TE/CdZnTe/Pt structure</title><source>SpringerLink Journals - AutoHoldings</source><creator>Wang, Aoqiu ; Zhang, Jiakui ; Zha, Gangqiang ; Xu, Lingyan ; Jie, Wanqi</creator><creatorcontrib>Wang, Aoqiu ; Zhang, Jiakui ; Zha, Gangqiang ; Xu, Lingyan ; Jie, Wanqi</creatorcontrib><description>TE/CdZnTe/Pt/Ti/SiO
2
/Si structures (top electrode TE = Au, Pt, Al, Ti and Cu) were fabricated by magnetron sputtering and thermal evaporation. Bipolar resistive switching behavior was observed in TE/CdZnTe/Pt/Ti/SiO
2
/Si structure when TE is Al, Ti or Cu, but Pt or Au as TE in TE/CdZnTe/Pt device showed no resistive switching. The interfacial layer-dominated model was proposed to explain the presence of resistive switching behavior in TE/CdZnTe/Pt device due to oxidizable electrodes. The role of the CdZnTe film is a series resistor after the forming process. Space charge-limited current model was used to analyze the conduction mechanism and ~ 10
19
cm
−3
trap density in the interfacial layer was calculated by fitting the current–voltage curve. The device properties including voltage parameter distribution, retention property and endurance property were tested, respectively. The Al/CdZnTe/Pt/Ti/SiO
2
/Si structure has a good potential as resistive switching random access memory with over 10
3
ON/OFF ratio and at least 10
3
s retention time.</description><identifier>ISSN: 0957-4522</identifier><identifier>EISSN: 1573-482X</identifier><identifier>DOI: 10.1007/s10854-021-05739-3</identifier><language>eng</language><publisher>New York: Springer US</publisher><subject>Aluminum ; Cadmium zinc tellurides ; Characterization and Evaluation of Materials ; Chemistry and Materials Science ; Copper ; Curve fitting ; Electric potential ; Fatigue tests ; Gold ; Magnetron sputtering ; Materials Science ; Optical and Electronic Materials ; Platinum ; Random access memory ; Silicon dioxide ; Space charge ; Switching ; Titanium ; Voltage</subject><ispartof>Journal of materials science. Materials in electronics, 2021-04, Vol.32 (8), p.10809-10819</ispartof><rights>The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2021</rights><rights>The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2021.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c319t-74a0bc2ddf506fbfa8c06e5587424bc440082febfc96b3b17c79e9a59f13caf23</citedby><cites>FETCH-LOGICAL-c319t-74a0bc2ddf506fbfa8c06e5587424bc440082febfc96b3b17c79e9a59f13caf23</cites><orcidid>0000-0003-2827-8058</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s10854-021-05739-3$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s10854-021-05739-3$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,780,784,27924,27925,41488,42557,51319</link.rule.ids></links><search><creatorcontrib>Wang, Aoqiu</creatorcontrib><creatorcontrib>Zhang, Jiakui</creatorcontrib><creatorcontrib>Zha, Gangqiang</creatorcontrib><creatorcontrib>Xu, Lingyan</creatorcontrib><creatorcontrib>Jie, Wanqi</creatorcontrib><title>Oxidizable electrode induced bipolar resistive switching behavior in TE/CdZnTe/Pt structure</title><title>Journal of materials science. Materials in electronics</title><addtitle>J Mater Sci: Mater Electron</addtitle><description>TE/CdZnTe/Pt/Ti/SiO
2
/Si structures (top electrode TE = Au, Pt, Al, Ti and Cu) were fabricated by magnetron sputtering and thermal evaporation. Bipolar resistive switching behavior was observed in TE/CdZnTe/Pt/Ti/SiO
2
/Si structure when TE is Al, Ti or Cu, but Pt or Au as TE in TE/CdZnTe/Pt device showed no resistive switching. The interfacial layer-dominated model was proposed to explain the presence of resistive switching behavior in TE/CdZnTe/Pt device due to oxidizable electrodes. The role of the CdZnTe film is a series resistor after the forming process. Space charge-limited current model was used to analyze the conduction mechanism and ~ 10
19
cm
−3
trap density in the interfacial layer was calculated by fitting the current–voltage curve. The device properties including voltage parameter distribution, retention property and endurance property were tested, respectively. The Al/CdZnTe/Pt/Ti/SiO
2
/Si structure has a good potential as resistive switching random access memory with over 10
3
ON/OFF ratio and at least 10
3
s retention time.</description><subject>Aluminum</subject><subject>Cadmium zinc tellurides</subject><subject>Characterization and Evaluation of Materials</subject><subject>Chemistry and Materials Science</subject><subject>Copper</subject><subject>Curve fitting</subject><subject>Electric potential</subject><subject>Fatigue tests</subject><subject>Gold</subject><subject>Magnetron sputtering</subject><subject>Materials Science</subject><subject>Optical and Electronic Materials</subject><subject>Platinum</subject><subject>Random access memory</subject><subject>Silicon dioxide</subject><subject>Space charge</subject><subject>Switching</subject><subject>Titanium</subject><subject>Voltage</subject><issn>0957-4522</issn><issn>1573-482X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><sourceid>AFKRA</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><recordid>eNp9kEtLAzEUhYMoWKt_wFXAdWye81hKqQ8o1EUF0UVIMjdtyjhTk5n6-PWOVnDn6p7Fd86FD6FzRi8ZpfkkMVooSShnhKpclEQcoBEbEpEFfzxEI1qqnEjF-TE6SWlDKc2kKEboefEeqvBpbA0YanBdbCvAoal6BxW2YdvWJuIIKaQu7ACnt9C5dWhW2MLa7EIbBxgvZ5Np9dQsYXLf4dTF3nV9hFN05E2d4Oz3jtHD9Ww5vSXzxc3d9GpOnGBlR3JpqHW8qryimbfeFI5moFSRSy6tk5LSgnuw3pWZFZblLi-hNKr0TDjjuRiji_3uNravPaROb9o-NsNLzRUrVMalKgaK7ykX25QieL2N4cXED82o_pao9xL1IFH_SNRiKIl9KQ1ws4L4N_1P6wslqHZC</recordid><startdate>20210401</startdate><enddate>20210401</enddate><creator>Wang, Aoqiu</creator><creator>Zhang, Jiakui</creator><creator>Zha, Gangqiang</creator><creator>Xu, Lingyan</creator><creator>Jie, Wanqi</creator><general>Springer US</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>F28</scope><scope>FR3</scope><scope>HCIFZ</scope><scope>JG9</scope><scope>KB.</scope><scope>L7M</scope><scope>P5Z</scope><scope>P62</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>S0W</scope><orcidid>https://orcid.org/0000-0003-2827-8058</orcidid></search><sort><creationdate>20210401</creationdate><title>Oxidizable electrode induced bipolar resistive switching behavior in TE/CdZnTe/Pt structure</title><author>Wang, Aoqiu ; Zhang, Jiakui ; Zha, Gangqiang ; Xu, Lingyan ; Jie, Wanqi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c319t-74a0bc2ddf506fbfa8c06e5587424bc440082febfc96b3b17c79e9a59f13caf23</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><topic>Aluminum</topic><topic>Cadmium zinc tellurides</topic><topic>Characterization and Evaluation of Materials</topic><topic>Chemistry and Materials Science</topic><topic>Copper</topic><topic>Curve fitting</topic><topic>Electric potential</topic><topic>Fatigue tests</topic><topic>Gold</topic><topic>Magnetron sputtering</topic><topic>Materials Science</topic><topic>Optical and Electronic Materials</topic><topic>Platinum</topic><topic>Random access memory</topic><topic>Silicon dioxide</topic><topic>Space charge</topic><topic>Switching</topic><topic>Titanium</topic><topic>Voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Wang, Aoqiu</creatorcontrib><creatorcontrib>Zhang, Jiakui</creatorcontrib><creatorcontrib>Zha, Gangqiang</creatorcontrib><creatorcontrib>Xu, Lingyan</creatorcontrib><creatorcontrib>Jie, Wanqi</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central UK/Ireland</collection><collection>Advanced Technologies & Aerospace Collection</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>SciTech Premium Collection</collection><collection>Materials Research Database</collection><collection>Materials Science Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Advanced Technologies & Aerospace Database</collection><collection>ProQuest Advanced Technologies & Aerospace Collection</collection><collection>Materials Science Collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>DELNET Engineering & Technology Collection</collection><jtitle>Journal of materials science. Materials in electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Wang, Aoqiu</au><au>Zhang, Jiakui</au><au>Zha, Gangqiang</au><au>Xu, Lingyan</au><au>Jie, Wanqi</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Oxidizable electrode induced bipolar resistive switching behavior in TE/CdZnTe/Pt structure</atitle><jtitle>Journal of materials science. Materials in electronics</jtitle><stitle>J Mater Sci: Mater Electron</stitle><date>2021-04-01</date><risdate>2021</risdate><volume>32</volume><issue>8</issue><spage>10809</spage><epage>10819</epage><pages>10809-10819</pages><issn>0957-4522</issn><eissn>1573-482X</eissn><abstract>TE/CdZnTe/Pt/Ti/SiO
2
/Si structures (top electrode TE = Au, Pt, Al, Ti and Cu) were fabricated by magnetron sputtering and thermal evaporation. Bipolar resistive switching behavior was observed in TE/CdZnTe/Pt/Ti/SiO
2
/Si structure when TE is Al, Ti or Cu, but Pt or Au as TE in TE/CdZnTe/Pt device showed no resistive switching. The interfacial layer-dominated model was proposed to explain the presence of resistive switching behavior in TE/CdZnTe/Pt device due to oxidizable electrodes. The role of the CdZnTe film is a series resistor after the forming process. Space charge-limited current model was used to analyze the conduction mechanism and ~ 10
19
cm
−3
trap density in the interfacial layer was calculated by fitting the current–voltage curve. The device properties including voltage parameter distribution, retention property and endurance property were tested, respectively. The Al/CdZnTe/Pt/Ti/SiO
2
/Si structure has a good potential as resistive switching random access memory with over 10
3
ON/OFF ratio and at least 10
3
s retention time.</abstract><cop>New York</cop><pub>Springer US</pub><doi>10.1007/s10854-021-05739-3</doi><tpages>11</tpages><orcidid>https://orcid.org/0000-0003-2827-8058</orcidid></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0957-4522 |
| ispartof | Journal of materials science. Materials in electronics, 2021-04, Vol.32 (8), p.10809-10819 |
| issn | 0957-4522 1573-482X |
| language | eng |
| recordid | cdi_proquest_journals_2518562458 |
| source | SpringerLink Journals - AutoHoldings |
| subjects | Aluminum Cadmium zinc tellurides Characterization and Evaluation of Materials Chemistry and Materials Science Copper Curve fitting Electric potential Fatigue tests Gold Magnetron sputtering Materials Science Optical and Electronic Materials Platinum Random access memory Silicon dioxide Space charge Switching Titanium Voltage |
| title | Oxidizable electrode induced bipolar resistive switching behavior in TE/CdZnTe/Pt structure |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-20T07%3A50%3A59IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Oxidizable%20electrode%20induced%20bipolar%20resistive%20switching%20behavior%20in%20TE/CdZnTe/Pt%20structure&rft.jtitle=Journal%20of%20materials%20science.%20Materials%20in%20electronics&rft.au=Wang,%20Aoqiu&rft.date=2021-04-01&rft.volume=32&rft.issue=8&rft.spage=10809&rft.epage=10819&rft.pages=10809-10819&rft.issn=0957-4522&rft.eissn=1573-482X&rft_id=info:doi/10.1007/s10854-021-05739-3&rft_dat=%3Cproquest_cross%3E2518562458%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2518562458&rft_id=info:pmid/&rfr_iscdi=true |