THz intersubband absorption in n-type Si1−xGex parabolic quantum wells
High-quality n-type continuously graded Ge-rich Si1−xGex parabolic quantum wells with different doping levels were grown by using ultrahigh-vacuum chemical vapor deposition on Si(001) substrates. A thorough structural characterization study highlights an ideal parabolic compositional profile. THz in...
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| Veröffentlicht in: | Applied physics letters 2021-04, Vol.118 (16) |
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| container_title | Applied physics letters |
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| creator | Montanari, Michele Ciano, Chiara Persichetti, Luca Corley, Cedric Baldassarre, Leonetta Ortolani, Michele Di Gaspare, Luciana Capellini, Giovanni Stark, David Scalari, Giacomo Virgilio, Michele De Seta, Monica |
| description | High-quality n-type continuously graded Ge-rich Si1−xGex parabolic quantum wells with different doping levels were grown by using ultrahigh-vacuum chemical vapor deposition on Si(001) substrates. A thorough structural characterization study highlights an ideal parabolic compositional profile. THz intersubband absorption has been investigated in modulation-doped samples and samples directly doped in the wells. The comparison of experimental absorption data and theoretical calculations allowed us to quantify the impact of electron correlation effects on the absorption resonances in the different doping conditions and for electron sheet densities in the (
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11 cm−2 range. A single optical resonance is present in modulation doped samples. Its peak energy and line shape are independent of temperature-induced variations of the electron distribution in the subbands up to 300 K, in agreement with the generalized Kohn theorem. This achievement represents a relevant step forward for the development of CMOS compatible optoelectronic devices in the THz spectral range, where thermal charge fluctuations play a key role. |
| doi_str_mv | 10.1063/5.0048344 |
| format | Article |
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)
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11 cm−2 range. A single optical resonance is present in modulation doped samples. Its peak energy and line shape are independent of temperature-induced variations of the electron distribution in the subbands up to 300 K, in agreement with the generalized Kohn theorem. This achievement represents a relevant step forward for the development of CMOS compatible optoelectronic devices in the THz spectral range, where thermal charge fluctuations play a key role.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/5.0048344</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Absorption ; Applied physics ; Chemical vapor deposition ; CMOS ; Doping ; Electron distribution ; Electrons ; Germanium ; Line shape ; Modulation ; Optical resonance ; Optoelectronic devices ; Quantum wells ; Silicon germanides ; Silicon substrates ; Structural analysis</subject><ispartof>Applied physics letters, 2021-04, Vol.118 (16)</ispartof><rights>Author(s)</rights><rights>2021 Author(s). Published under license by AIP Publishing.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><orcidid>0000-0002-7203-5355 ; 0000-0003-3134-7296 ; 0000-0002-5169-2823 ; 0000-0003-4028-803X ; 0000-0002-9850-4914 ; 0000-0003-1888-6770 ; 0000-0003-2217-0564 ; 0000-0001-6578-254X ; 0000-0002-7847-6813 ; 0000-0002-8920-8371</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/5.0048344$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,780,784,794,4512,27924,27925,76384</link.rule.ids></links><search><creatorcontrib>Montanari, Michele</creatorcontrib><creatorcontrib>Ciano, Chiara</creatorcontrib><creatorcontrib>Persichetti, Luca</creatorcontrib><creatorcontrib>Corley, Cedric</creatorcontrib><creatorcontrib>Baldassarre, Leonetta</creatorcontrib><creatorcontrib>Ortolani, Michele</creatorcontrib><creatorcontrib>Di Gaspare, Luciana</creatorcontrib><creatorcontrib>Capellini, Giovanni</creatorcontrib><creatorcontrib>Stark, David</creatorcontrib><creatorcontrib>Scalari, Giacomo</creatorcontrib><creatorcontrib>Virgilio, Michele</creatorcontrib><creatorcontrib>De Seta, Monica</creatorcontrib><title>THz intersubband absorption in n-type Si1−xGex parabolic quantum wells</title><title>Applied physics letters</title><description>High-quality n-type continuously graded Ge-rich Si1−xGex parabolic quantum wells with different doping levels were grown by using ultrahigh-vacuum chemical vapor deposition on Si(001) substrates. A thorough structural characterization study highlights an ideal parabolic compositional profile. THz intersubband absorption has been investigated in modulation-doped samples and samples directly doped in the wells. The comparison of experimental absorption data and theoretical calculations allowed us to quantify the impact of electron correlation effects on the absorption resonances in the different doping conditions and for electron sheet densities in the (
1
÷
6
)
×
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11 cm−2 range. A single optical resonance is present in modulation doped samples. Its peak energy and line shape are independent of temperature-induced variations of the electron distribution in the subbands up to 300 K, in agreement with the generalized Kohn theorem. This achievement represents a relevant step forward for the development of CMOS compatible optoelectronic devices in the THz spectral range, where thermal charge fluctuations play a key role.</description><subject>Absorption</subject><subject>Applied physics</subject><subject>Chemical vapor deposition</subject><subject>CMOS</subject><subject>Doping</subject><subject>Electron distribution</subject><subject>Electrons</subject><subject>Germanium</subject><subject>Line shape</subject><subject>Modulation</subject><subject>Optical resonance</subject><subject>Optoelectronic devices</subject><subject>Quantum wells</subject><subject>Silicon germanides</subject><subject>Silicon substrates</subject><subject>Structural analysis</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><recordid>eNp9kM9Kw0AYxBdRMFYPvsGCNyF1_yaboxRthIIH63nZbHYhJU22uxttfQLPfUSfxJQWvHn6mOHHDN8AcIvRFKOMPvApQkxQxs5AglGepxRjcQ4ShBBNs4LjS3AVwmqUnFCagHJZfsGmi8aHoapUV0NVhd672PTd6MMujTtn4FuDf77327nZQqe8qvq20XAzqC4Oa_hp2jZcgwur2mBuTncC3p-flrMyXbzOX2aPi9QRIWKaK2tpnVNKrC4KXlNbMKs4UcYYhhSujMWmIigXHAlSZIZRrTTRmonRIpZOwN0x1_l-M5gQ5aoffDdWSsJxxniGkRip-yMVdBPV4RnpfLNWficxkoelJJenpf6DP3r_B0pXW_oLPL9qYA</recordid><startdate>20210419</startdate><enddate>20210419</enddate><creator>Montanari, Michele</creator><creator>Ciano, Chiara</creator><creator>Persichetti, Luca</creator><creator>Corley, Cedric</creator><creator>Baldassarre, Leonetta</creator><creator>Ortolani, Michele</creator><creator>Di Gaspare, Luciana</creator><creator>Capellini, Giovanni</creator><creator>Stark, David</creator><creator>Scalari, Giacomo</creator><creator>Virgilio, Michele</creator><creator>De Seta, Monica</creator><general>American Institute of Physics</general><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-7203-5355</orcidid><orcidid>https://orcid.org/0000-0003-3134-7296</orcidid><orcidid>https://orcid.org/0000-0002-5169-2823</orcidid><orcidid>https://orcid.org/0000-0003-4028-803X</orcidid><orcidid>https://orcid.org/0000-0002-9850-4914</orcidid><orcidid>https://orcid.org/0000-0003-1888-6770</orcidid><orcidid>https://orcid.org/0000-0003-2217-0564</orcidid><orcidid>https://orcid.org/0000-0001-6578-254X</orcidid><orcidid>https://orcid.org/0000-0002-7847-6813</orcidid><orcidid>https://orcid.org/0000-0002-8920-8371</orcidid></search><sort><creationdate>20210419</creationdate><title>THz intersubband absorption in n-type Si1−xGex parabolic quantum wells</title><author>Montanari, Michele ; Ciano, Chiara ; Persichetti, Luca ; Corley, Cedric ; Baldassarre, Leonetta ; Ortolani, Michele ; Di Gaspare, Luciana ; Capellini, Giovanni ; Stark, David ; Scalari, Giacomo ; Virgilio, Michele ; De Seta, Monica</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-p288t-7aff3d7332fc995d3f94fa52aeee40a1bef1eb2078508296e43cac2cc487852f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><topic>Absorption</topic><topic>Applied physics</topic><topic>Chemical vapor deposition</topic><topic>CMOS</topic><topic>Doping</topic><topic>Electron distribution</topic><topic>Electrons</topic><topic>Germanium</topic><topic>Line shape</topic><topic>Modulation</topic><topic>Optical resonance</topic><topic>Optoelectronic devices</topic><topic>Quantum wells</topic><topic>Silicon germanides</topic><topic>Silicon substrates</topic><topic>Structural analysis</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Montanari, Michele</creatorcontrib><creatorcontrib>Ciano, Chiara</creatorcontrib><creatorcontrib>Persichetti, Luca</creatorcontrib><creatorcontrib>Corley, Cedric</creatorcontrib><creatorcontrib>Baldassarre, Leonetta</creatorcontrib><creatorcontrib>Ortolani, Michele</creatorcontrib><creatorcontrib>Di Gaspare, Luciana</creatorcontrib><creatorcontrib>Capellini, Giovanni</creatorcontrib><creatorcontrib>Stark, David</creatorcontrib><creatorcontrib>Scalari, Giacomo</creatorcontrib><creatorcontrib>Virgilio, Michele</creatorcontrib><creatorcontrib>De Seta, Monica</creatorcontrib><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Montanari, Michele</au><au>Ciano, Chiara</au><au>Persichetti, Luca</au><au>Corley, Cedric</au><au>Baldassarre, Leonetta</au><au>Ortolani, Michele</au><au>Di Gaspare, Luciana</au><au>Capellini, Giovanni</au><au>Stark, David</au><au>Scalari, Giacomo</au><au>Virgilio, Michele</au><au>De Seta, Monica</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>THz intersubband absorption in n-type Si1−xGex parabolic quantum wells</atitle><jtitle>Applied physics letters</jtitle><date>2021-04-19</date><risdate>2021</risdate><volume>118</volume><issue>16</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>High-quality n-type continuously graded Ge-rich Si1−xGex parabolic quantum wells with different doping levels were grown by using ultrahigh-vacuum chemical vapor deposition on Si(001) substrates. A thorough structural characterization study highlights an ideal parabolic compositional profile. THz intersubband absorption has been investigated in modulation-doped samples and samples directly doped in the wells. The comparison of experimental absorption data and theoretical calculations allowed us to quantify the impact of electron correlation effects on the absorption resonances in the different doping conditions and for electron sheet densities in the (
1
÷
6
)
×
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11 cm−2 range. A single optical resonance is present in modulation doped samples. Its peak energy and line shape are independent of temperature-induced variations of the electron distribution in the subbands up to 300 K, in agreement with the generalized Kohn theorem. This achievement represents a relevant step forward for the development of CMOS compatible optoelectronic devices in the THz spectral range, where thermal charge fluctuations play a key role.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/5.0048344</doi><tpages>5</tpages><orcidid>https://orcid.org/0000-0002-7203-5355</orcidid><orcidid>https://orcid.org/0000-0003-3134-7296</orcidid><orcidid>https://orcid.org/0000-0002-5169-2823</orcidid><orcidid>https://orcid.org/0000-0003-4028-803X</orcidid><orcidid>https://orcid.org/0000-0002-9850-4914</orcidid><orcidid>https://orcid.org/0000-0003-1888-6770</orcidid><orcidid>https://orcid.org/0000-0003-2217-0564</orcidid><orcidid>https://orcid.org/0000-0001-6578-254X</orcidid><orcidid>https://orcid.org/0000-0002-7847-6813</orcidid><orcidid>https://orcid.org/0000-0002-8920-8371</orcidid><oa>free_for_read</oa></addata></record> |
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| source | American Institute of Physics; Alma/SFX Local Collection |
| subjects | Absorption Applied physics Chemical vapor deposition CMOS Doping Electron distribution Electrons Germanium Line shape Modulation Optical resonance Optoelectronic devices Quantum wells Silicon germanides Silicon substrates Structural analysis |
| title | THz intersubband absorption in n-type Si1−xGex parabolic quantum wells |
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