Defect structures in (001) zincblende GaN/3C-SiC nucleation layers

The defect structure of zincblende GaN nucleation layers grown by metalorganic vapor-phase epitaxy on 3C-SiC/Si (001) was investigated by high-resolution scanning transmission electron microscopy. Perfect dislocations, partial dislocations, and stacking faults are present in the layers. Perfect disl...

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Veröffentlicht in:	Journal of applied physics 2021-04, Vol.129 (15)
Hauptverfasser:	Vacek, Petr, Frentrup, Martin, Lee, Lok Yi, Massabuau, Fabien C.-P., Kappers, Menno J., Wallis, David J., Gröger, Roman, Oliver, Rachel A.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Chiropractic medicine Compressive properties Crystals Dislocation loops Epitaxial growth Fault detection Metalorganic chemical vapor deposition Misfit dislocations Nucleation Scanning transmission electron microscopy Stacking faults Vapor phase epitaxy Zincblende
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