Lead-free ferroelectric barium titanate -based thin film for tunable microwave device application
Lead-free ferroelectric barium titanate-based (Ba 0.85 Sr 0.15 Zr 0.1 Ti 0.9 O 3 , BSZT) thin films have been successfully deposited on Pt- coated silicon substrates by a spin-coating solgel method. Microstructure and dielectric respones of the Pt/BSZT/Pt thin film capacitors were investigated in de...
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| Veröffentlicht in: | IOP conference series. Materials Science and Engineering 2021-02, Vol.1091 (1), p.12060 |
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| creator | Vu, Thu-Hien Phuong, Nguyen T. M. Nguyen, Tai |
| description | Lead-free ferroelectric barium titanate-based (Ba
0.85
Sr
0.15
Zr
0.1
Ti
0.9
O
3
, BSZT) thin films have been successfully deposited on Pt- coated silicon substrates by a spin-coating solgel method. Microstructure and dielectric respones of the Pt/BSZT/Pt thin film capacitors were investigated in detail. X-ray diffraction analysis results indicated that BSZT thin films were well crystallized in tetragonal perovskite structure with a random crystal orientation at rather low temperature of 650 °C. Dielectric constant and dielectric loss of the thin film capacitors were performed at various bias voltage ranges and frequency from 1kHz up to 5MHz. Hysteresis C-V curves with two maxima confirmed the ferroelectric nature in the film. The BSZT capacitors provide excellent dielectric tunability ∼ 42- 69% and high figure-of-merit (FOM) ∼ 4-17 at different bias voltages. |
| doi_str_mv | 10.1088/1757-899X/1091/1/012060 |
| format | Article |
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0.85
Sr
0.15
Zr
0.1
Ti
0.9
O
3
, BSZT) thin films have been successfully deposited on Pt- coated silicon substrates by a spin-coating solgel method. Microstructure and dielectric respones of the Pt/BSZT/Pt thin film capacitors were investigated in detail. X-ray diffraction analysis results indicated that BSZT thin films were well crystallized in tetragonal perovskite structure with a random crystal orientation at rather low temperature of 650 °C. Dielectric constant and dielectric loss of the thin film capacitors were performed at various bias voltage ranges and frequency from 1kHz up to 5MHz. Hysteresis C-V curves with two maxima confirmed the ferroelectric nature in the film. The BSZT capacitors provide excellent dielectric tunability ∼ 42- 69% and high figure-of-merit (FOM) ∼ 4-17 at different bias voltages.</description><identifier>ISSN: 1757-8981</identifier><identifier>EISSN: 1757-899X</identifier><identifier>DOI: 10.1088/1757-899X/1091/1/012060</identifier><language>eng</language><publisher>Bristol: IOP Publishing</publisher><subject>Barium titanates ; Bias ; Capacitors ; Crystal structure ; Crystallization ; Dielectric loss ; Ferroelectric materials ; Ferroelectricity ; Lead free ; Low temperature ; Perovskite structure ; Perovskites ; Silicon substrates ; Spin coating ; Thin films</subject><ispartof>IOP conference series. Materials Science and Engineering, 2021-02, Vol.1091 (1), p.12060</ispartof><rights>2021. This work is published under http://creativecommons.org/licenses/by/3.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c1790-a5f18b63f5803f3dc90795321a9f24591cc4d64bfa65b6ea50d8c75581b41ea63</citedby><cites>FETCH-LOGICAL-c1790-a5f18b63f5803f3dc90795321a9f24591cc4d64bfa65b6ea50d8c75581b41ea63</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27915,27916</link.rule.ids></links><search><creatorcontrib>Vu, Thu-Hien</creatorcontrib><creatorcontrib>Phuong, Nguyen T. M.</creatorcontrib><creatorcontrib>Nguyen, Tai</creatorcontrib><title>Lead-free ferroelectric barium titanate -based thin film for tunable microwave device application</title><title>IOP conference series. Materials Science and Engineering</title><description>Lead-free ferroelectric barium titanate-based (Ba
0.85
Sr
0.15
Zr
0.1
Ti
0.9
O
3
, BSZT) thin films have been successfully deposited on Pt- coated silicon substrates by a spin-coating solgel method. Microstructure and dielectric respones of the Pt/BSZT/Pt thin film capacitors were investigated in detail. X-ray diffraction analysis results indicated that BSZT thin films were well crystallized in tetragonal perovskite structure with a random crystal orientation at rather low temperature of 650 °C. Dielectric constant and dielectric loss of the thin film capacitors were performed at various bias voltage ranges and frequency from 1kHz up to 5MHz. Hysteresis C-V curves with two maxima confirmed the ferroelectric nature in the film. The BSZT capacitors provide excellent dielectric tunability ∼ 42- 69% and high figure-of-merit (FOM) ∼ 4-17 at different bias voltages.</description><subject>Barium titanates</subject><subject>Bias</subject><subject>Capacitors</subject><subject>Crystal structure</subject><subject>Crystallization</subject><subject>Dielectric loss</subject><subject>Ferroelectric materials</subject><subject>Ferroelectricity</subject><subject>Lead free</subject><subject>Low temperature</subject><subject>Perovskite structure</subject><subject>Perovskites</subject><subject>Silicon substrates</subject><subject>Spin coating</subject><subject>Thin films</subject><issn>1757-8981</issn><issn>1757-899X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><sourceid>ABUWG</sourceid><sourceid>AFKRA</sourceid><sourceid>AZQEC</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><recordid>eNo90E1LxDAQBuAgCq6rv8GA59pM27TJURa_YMGLgrcwTSeYpV-m6Yr_3i0re5qBeZkZHsZuQdyDUCqFSlaJ0vozBaEhhVRAJkpxxlanyfmpV3DJrqZpJ0RZFYVYMdwSNokLRNxRCAO1ZGPwltcY_Nzx6CP2GIknNU7U8Pjle-5823E3BB7nHuuWeOdtGH5wT7yhvbfEcRxbbzH6ob9mFw7biW7-65p9PD2-b16S7dvz6-Zhm1iotEhQOlB1mTupRO7yxmpRaZlngNplhdRgbdGURe2wlHVJKEWjbCWlgroAwjJfs7vj3jEM3zNN0eyGOfSHkyaTkGkpoVCHVHVMHR6epkDOjMF3GH4NCLN4mkXKLGpm8TRgjp75H1B5aZA</recordid><startdate>20210201</startdate><enddate>20210201</enddate><creator>Vu, Thu-Hien</creator><creator>Phuong, Nguyen T. M.</creator><creator>Nguyen, Tai</creator><general>IOP Publishing</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>HCIFZ</scope><scope>KB.</scope><scope>L6V</scope><scope>M7S</scope><scope>PDBOC</scope><scope>PIMPY</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>PTHSS</scope></search><sort><creationdate>20210201</creationdate><title>Lead-free ferroelectric barium titanate -based thin film for tunable microwave device application</title><author>Vu, Thu-Hien ; Phuong, Nguyen T. M. ; Nguyen, Tai</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c1790-a5f18b63f5803f3dc90795321a9f24591cc4d64bfa65b6ea50d8c75581b41ea63</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><topic>Barium titanates</topic><topic>Bias</topic><topic>Capacitors</topic><topic>Crystal structure</topic><topic>Crystallization</topic><topic>Dielectric loss</topic><topic>Ferroelectric materials</topic><topic>Ferroelectricity</topic><topic>Lead free</topic><topic>Low temperature</topic><topic>Perovskite structure</topic><topic>Perovskites</topic><topic>Silicon substrates</topic><topic>Spin coating</topic><topic>Thin films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Vu, Thu-Hien</creatorcontrib><creatorcontrib>Phuong, Nguyen T. M.</creatorcontrib><creatorcontrib>Nguyen, Tai</creatorcontrib><collection>CrossRef</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central (Alumni Edition)</collection><collection>ProQuest Central UK/Ireland</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>SciTech Premium Collection</collection><collection>Materials Science Database</collection><collection>ProQuest Engineering Collection</collection><collection>Engineering Database</collection><collection>Materials Science Collection</collection><collection>Publicly Available Content Database</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>Engineering Collection</collection><jtitle>IOP conference series. Materials Science and Engineering</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Vu, Thu-Hien</au><au>Phuong, Nguyen T. M.</au><au>Nguyen, Tai</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Lead-free ferroelectric barium titanate -based thin film for tunable microwave device application</atitle><jtitle>IOP conference series. Materials Science and Engineering</jtitle><date>2021-02-01</date><risdate>2021</risdate><volume>1091</volume><issue>1</issue><spage>12060</spage><pages>12060-</pages><issn>1757-8981</issn><eissn>1757-899X</eissn><abstract>Lead-free ferroelectric barium titanate-based (Ba
0.85
Sr
0.15
Zr
0.1
Ti
0.9
O
3
, BSZT) thin films have been successfully deposited on Pt- coated silicon substrates by a spin-coating solgel method. Microstructure and dielectric respones of the Pt/BSZT/Pt thin film capacitors were investigated in detail. X-ray diffraction analysis results indicated that BSZT thin films were well crystallized in tetragonal perovskite structure with a random crystal orientation at rather low temperature of 650 °C. Dielectric constant and dielectric loss of the thin film capacitors were performed at various bias voltage ranges and frequency from 1kHz up to 5MHz. Hysteresis C-V curves with two maxima confirmed the ferroelectric nature in the film. The BSZT capacitors provide excellent dielectric tunability ∼ 42- 69% and high figure-of-merit (FOM) ∼ 4-17 at different bias voltages.</abstract><cop>Bristol</cop><pub>IOP Publishing</pub><doi>10.1088/1757-899X/1091/1/012060</doi><oa>free_for_read</oa></addata></record> |
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| subjects | Barium titanates Bias Capacitors Crystal structure Crystallization Dielectric loss Ferroelectric materials Ferroelectricity Lead free Low temperature Perovskite structure Perovskites Silicon substrates Spin coating Thin films |
| title | Lead-free ferroelectric barium titanate -based thin film for tunable microwave device application |
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