Solution processed high performance ferroelectric Hf0.5Zr0.5O2 thin film transistor on glass substrate

Thin film transistors (TFTs) with a ferroelectric Hf0.5Zr0.5O2 (HZO) gate insulator (GI) have been reported by using the vacuum process for HZO such as sputtering and atomic layer deposition methods. We report in this paper the ZnO TFT with ferroelectric GI using solution processed AlOx/HZO. AlOx as...

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Veröffentlicht in:	Applied physics letters 2021-04, Vol.118 (15)
Hauptverfasser:	Hasan, Md. Mehedi, Ahn, Chang Won, Kim, Tae Heon, Jang, Jin
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Atomic layer epitaxy Electric potential Ferroelectric materials Ferroelectricity Glass substrates Pulse duration Semiconductor devices Thin film transistors Thin films Voltage Zinc oxide
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