On the Raman Scattering, Infrared Absorption, and Luminescence Spectroscopy of Aluminum Nitride Doped with Beryllium

The effects of the high-temperature ( T = 1880°C) diffusion of beryllium ions and of electron irradiation on the optical properties of single-crystal aluminum nitride is studied. It is shown that the introduction of Be into AlN results in a change in the spectral characteristics of Raman scattering...

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Veröffentlicht in:	Semiconductors (Woodbury, N.Y.) N.Y.), 2021-03, Vol.55 (3), p.328-332
Hauptverfasser:	Breev, I. D., Yakovleva, V. D., Kudryavtsev, O. S., Baranov, P. G., Mokhov, E. N., Anisimov, A. N.
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum Aluminum compounds Aluminum nitride Beryllium Composite Semiconductors Crystal defects Electron irradiation Gettering High temperature Impurities Infrared absorption Infrared analysis Infrared spectra Light-emitting diodes Line spectra Magnetic Materials Magnetism Microcrystalline Nanocrystalline Nitrides Optical properties Physics Physics and Astronomy Porous Raman spectra Single crystals Spectrum analysis
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