On the Raman Scattering, Infrared Absorption, and Luminescence Spectroscopy of Aluminum Nitride Doped with Beryllium
The effects of the high-temperature ( T = 1880°C) diffusion of beryllium ions and of electron irradiation on the optical properties of single-crystal aluminum nitride is studied. It is shown that the introduction of Be into AlN results in a change in the spectral characteristics of Raman scattering...
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| Veröffentlicht in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2021-03, Vol.55 (3), p.328-332 |
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| container_end_page | 332 |
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| container_issue | 3 |
| container_start_page | 328 |
| container_title | Semiconductors (Woodbury, N.Y.) |
| container_volume | 55 |
| creator | Breev, I. D. Yakovleva, V. D. Kudryavtsev, O. S. Baranov, P. G. Mokhov, E. N. Anisimov, A. N. |
| description | The effects of the high-temperature (
T
= 1880°C) diffusion of beryllium ions and of electron irradiation on the optical properties of single-crystal aluminum nitride is studied. It is shown that the introduction of Be into AlN results in a change in the spectral characteristics of Raman scattering and infrared absorption. The analysis of Raman spectra and infrared adsorption spectra in crystals containing the Be impurity proves that this impurity is a getter of intrinsic defects responsible for the yellow color of the AlN crystal and for the broadening of lines in the spectra. |
| doi_str_mv | 10.1134/S1063782621030040 |
| format | Article |
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T
= 1880°C) diffusion of beryllium ions and of electron irradiation on the optical properties of single-crystal aluminum nitride is studied. It is shown that the introduction of Be into AlN results in a change in the spectral characteristics of Raman scattering and infrared absorption. The analysis of Raman spectra and infrared adsorption spectra in crystals containing the Be impurity proves that this impurity is a getter of intrinsic defects responsible for the yellow color of the AlN crystal and for the broadening of lines in the spectra.</description><identifier>ISSN: 1063-7826</identifier><identifier>EISSN: 1090-6479</identifier><identifier>DOI: 10.1134/S1063782621030040</identifier><language>eng</language><publisher>Moscow: Pleiades Publishing</publisher><subject>Aluminum ; Aluminum compounds ; Aluminum nitride ; Beryllium ; Composite Semiconductors ; Crystal defects ; Electron irradiation ; Gettering ; High temperature ; Impurities ; Infrared absorption ; Infrared analysis ; Infrared spectra ; Light-emitting diodes ; Line spectra ; Magnetic Materials ; Magnetism ; Microcrystalline ; Nanocrystalline ; Nitrides ; Optical properties ; Physics ; Physics and Astronomy ; Porous ; Raman spectra ; Single crystals ; Spectrum analysis</subject><ispartof>Semiconductors (Woodbury, N.Y.), 2021-03, Vol.55 (3), p.328-332</ispartof><rights>Pleiades Publishing, Ltd. 2021. ISSN 1063-7826, Semiconductors, 2021, Vol. 55, No. 3, pp. 328–332. © Pleiades Publishing, Ltd., 2021. Russian Text © The Author(s), 2021, published in Fizika i Tekhnika Poluprovodnikov, 2021, Vol. 55, No. 3, pp. 251–255.</rights><rights>COPYRIGHT 2021 Springer</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c307t-20a37a4a92db48718ac9e5a3c8c8f7ccae0c7ff8906fc7087ea4f29087cb36153</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1134/S1063782621030040$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1134/S1063782621030040$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,780,784,27924,27925,41488,42557,51319</link.rule.ids></links><search><creatorcontrib>Breev, I. D.</creatorcontrib><creatorcontrib>Yakovleva, V. D.</creatorcontrib><creatorcontrib>Kudryavtsev, O. S.</creatorcontrib><creatorcontrib>Baranov, P. G.</creatorcontrib><creatorcontrib>Mokhov, E. N.</creatorcontrib><creatorcontrib>Anisimov, A. N.</creatorcontrib><title>On the Raman Scattering, Infrared Absorption, and Luminescence Spectroscopy of Aluminum Nitride Doped with Beryllium</title><title>Semiconductors (Woodbury, N.Y.)</title><addtitle>Semiconductors</addtitle><description>The effects of the high-temperature (
T
= 1880°C) diffusion of beryllium ions and of electron irradiation on the optical properties of single-crystal aluminum nitride is studied. It is shown that the introduction of Be into AlN results in a change in the spectral characteristics of Raman scattering and infrared absorption. The analysis of Raman spectra and infrared adsorption spectra in crystals containing the Be impurity proves that this impurity is a getter of intrinsic defects responsible for the yellow color of the AlN crystal and for the broadening of lines in the spectra.</description><subject>Aluminum</subject><subject>Aluminum compounds</subject><subject>Aluminum nitride</subject><subject>Beryllium</subject><subject>Composite Semiconductors</subject><subject>Crystal defects</subject><subject>Electron irradiation</subject><subject>Gettering</subject><subject>High temperature</subject><subject>Impurities</subject><subject>Infrared absorption</subject><subject>Infrared analysis</subject><subject>Infrared spectra</subject><subject>Light-emitting diodes</subject><subject>Line spectra</subject><subject>Magnetic Materials</subject><subject>Magnetism</subject><subject>Microcrystalline</subject><subject>Nanocrystalline</subject><subject>Nitrides</subject><subject>Optical properties</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Porous</subject><subject>Raman spectra</subject><subject>Single crystals</subject><subject>Spectrum analysis</subject><issn>1063-7826</issn><issn>1090-6479</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><recordid>eNp1kc1q3DAQgE1poWmaB-hN0GucjCzbko_bNGkCSwLd5my041GiYEuuJFP27SOzhR5KmMMMM_PNb1F84XDBuagvdxxaIVXVVhwEQA3vihMOHZRtLbv3q92Kco1_LD7F-ALAuWrqkyI9OJaeif3Uk3ZshzolCtY9nbM7Z4IONLDNPvowJ-vdOdNuYNtlso4ikkNiu5kwBR_RzwfmDduMa3SZ2L1NwQ7Evvs51_hj0zP7RuEwjnaZPhcfjB4jnf3Vp8XjzfWvq9ty-_Dj7mqzLVGATGUFWkhd664a9rWSXGnsqNECFSojETUBSmNUB61BCUqSrk3VZQP3ouWNOC2-HuvOwf9eKKb-xS_B5ZZ91YDqZN0KkbMujllPeqTeOuNT0JhloMmid2Rs9m_aRjZ5rI5ngB8BzIvHQKafg510OPQc-vUb_X_fyEx1ZOK8npfCv1Hehl4BPt2MIg</recordid><startdate>20210301</startdate><enddate>20210301</enddate><creator>Breev, I. 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T
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| subjects | Aluminum Aluminum compounds Aluminum nitride Beryllium Composite Semiconductors Crystal defects Electron irradiation Gettering High temperature Impurities Infrared absorption Infrared analysis Infrared spectra Light-emitting diodes Line spectra Magnetic Materials Magnetism Microcrystalline Nanocrystalline Nitrides Optical properties Physics Physics and Astronomy Porous Raman spectra Single crystals Spectrum analysis |
| title | On the Raman Scattering, Infrared Absorption, and Luminescence Spectroscopy of Aluminum Nitride Doped with Beryllium |
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