Optical properties of silicon-implanted polycrystalline diamond membranes

We investigate the optical properties of polycrystalline diamond membranes containing silicon-vacancy (SiV) color centers in combination with other nano-analytical techniques. We analyze the correlation between the Raman signal, the SiV emission, and the background luminescence in the crystalline gr...

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Veröffentlicht in:Carbon (New York) 2021-04, Vol.174, p.295-304
Hauptverfasser: Kambalathmana, H., Flatae, A.M., Hunold, L., Sledz, F., Müller, J., Hepp, M., Schmuki, P., Killian, M.S., Lagomarsino, S., Gelli, N., Sciortino, S., Giuntini, L., Wörner, E., Wild, C., Butz, B., Agio, M.
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container_issue
container_start_page 295
container_title Carbon (New York)
container_volume 174
creator Kambalathmana, H.
Flatae, A.M.
Hunold, L.
Sledz, F.
Müller, J.
Hepp, M.
Schmuki, P.
Killian, M.S.
Lagomarsino, S.
Gelli, N.
Sciortino, S.
Giuntini, L.
Wörner, E.
Wild, C.
Butz, B.
Agio, M.
description We investigate the optical properties of polycrystalline diamond membranes containing silicon-vacancy (SiV) color centers in combination with other nano-analytical techniques. We analyze the correlation between the Raman signal, the SiV emission, and the background luminescence in the crystalline grains and in the grain boundaries, identifying conditions for the addressability of single SiV centers. Moreover, we perform a scanning transmission electron microscopy (STEM) analysis, which associates the microscopic structure of the membranes and the evolution of the diamond crystals along the growth direction with the photoluminescence properties, as well as a time-of-flight secondary ion mass spectrometry (ToF-SIMS) to address the distribution of Si in implanted and un-implanted membranes. The results of the STEM and ToF-SIMS studies are consistent with the outcome of the optical measurements and provide useful insight into the preparation of polycrystalline samples for quantum nano-optics. [Display omitted]
doi_str_mv 10.1016/j.carbon.2020.12.031
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We analyze the correlation between the Raman signal, the SiV emission, and the background luminescence in the crystalline grains and in the grain boundaries, identifying conditions for the addressability of single SiV centers. Moreover, we perform a scanning transmission electron microscopy (STEM) analysis, which associates the microscopic structure of the membranes and the evolution of the diamond crystals along the growth direction with the photoluminescence properties, as well as a time-of-flight secondary ion mass spectrometry (ToF-SIMS) to address the distribution of Si in implanted and un-implanted membranes. The results of the STEM and ToF-SIMS studies are consistent with the outcome of the optical measurements and provide useful insight into the preparation of polycrystalline samples for quantum nano-optics. 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ispartof Carbon (New York), 2021-04, Vol.174, p.295-304
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language eng
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source Elsevier ScienceDirect Journals
subjects Color centers
Correlation analysis
Crystal growth
Crystal structure
CVD diamond Films
Diamonds
Emission analysis
Grain boundaries
Ion implantation
Luminescence
Membranes
Nano-optics
Optical measurement
Optical properties
Photoluminescence
Polycrystalline diamond
Polycrystals
Scanning electron microscopy
Scanning transmission electron microscopy
Secondary ion mass spectrometry
Silicon
Silicon-vacancy center
Spectroscopy and confocal mapping
STEM analysis
ToF-SIMS analysis
title Optical properties of silicon-implanted polycrystalline diamond membranes
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