Piezoresistive Characteristics of MOSFET Channels Determined With Indentation

The stress-related change in the characteristics of transistors manufactured in the 22 nm fully depleted silicon on insulator (FDSOI) CMOS technology node is studied with advanced experimental indentation setups. Precisely, NAND and NOR ring oscillator circuits are used to monitor the strain-caused...

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Veröffentlicht in:	IEEE transactions on electron devices 2021-04, Vol.68 (4), p.1483-1488
Hauptverfasser:	Schlipf, S., Clausner, A., Paul, J., Capecchi, S., Wambera, L., Meier, K., Zschech, E.
Format:	Artikel
Sprache:	eng
Schlagworte:	Channels Circuits CMOS Deviation Finite element method Finite-element method (FEM) Geometry Indentation Iron Logic gates MOSFETs piezoresistive coefficients ring oscillator (RO) Semiconductor devices Silicon Silicon transistors Strain Stress Tips Transistors
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