High-performance optoelectronic devices based on van der Waals vertical MoS2/MoSe2 heterostructures
Monolayer MoS 2 is a direct band gap semiconductor with large exciton binding energy, which is a promising candidate for the application of ultrathin optoelectronic devices. However, the optoelectronic performance of monolayer MoS 2 is seriously limited to its growth quality and carrier mobility. In...
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| Veröffentlicht in: | Nano research 2020-04, Vol.13 (4), p.1053-1059 |
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| creator | Li, Fang Xu, Boyi Yang, Wen Qi, Zhaoyang Ma, Chao Wang, Yajuan Zhang, Xuehong Luo, Zhuoran Liang, Delang Li, Dong Li, Ziwei Pan, Anlian |
| description | Monolayer MoS
2
is a direct band gap semiconductor with large exciton binding energy, which is a promising candidate for the application of ultrathin optoelectronic devices. However, the optoelectronic performance of monolayer MoS
2
is seriously limited to its growth quality and carrier mobility. In this work, we report the direct vapor growth and the optoelectronic device of vertically-stacked MoS
2
/MoSe
2
heterostructure, and further discuss the mechanism of improved device performance. The optical and high-resolution atomic characterizations demonstrate that the heterostructure interface is of high-quality without atomic alloying. Electrical transport measurements indicate that the heterostructure transistor exhibits a high mobility of 28.5 cm
2
/(V·s) and a high on/off ratio of 10
7
. The optoelectronic characterizations prove that the heterostructure device presents an enhanced photoresponsivity of 36 A/W and a remarkable detectivity of 4.8 × 10
11
Jones, which benefited from the interface induced built-in electric field and carrier dependent Coulomb screening effect. This work demonstrates that the construction of two-dimensional (2D) semiconductor heterostructures plays a significant role in modifying the optoelectronic device properties of 2D materials. |
| doi_str_mv | 10.1007/s12274-020-2743-7 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2503549768</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2398419407</sourcerecordid><originalsourceid>FETCH-LOGICAL-c344t-efde69e029224c8a2834c6fe0b3cdea6b1d977f6491acb547cb63b4abff1b5073</originalsourceid><addsrcrecordid>eNp9UMtOwzAQjBBIlMIHcLPEOdSvxPERVUCRijgA4mjZzqZN1cbBdirx97gExAn2sLNazcxqJ8suCb4mGItZIJQKnmOK84QsF0fZhEhZ5TjV8c9MKD_NzkLYYFxSwqtJZhftap334Bvnd7qzgFwfHWzBRu-61qIa9q2FgIwOUCPXob3u0tKjN623Ae3Bx9bqLXp0z3SWGlC0hgjehegHGwcP4Tw7aRIXLr5xmr3e3b7MF_ny6f5hfrPMLeM85tDUUErAVFLKbaVpxbgtG8CG2Rp0aUgthWhKLom2puDCmpIZrk3TEFNgwabZ1ejbe_c-QIhq4wbfpZOKFpgVXIqy-pfFZMWJ5F9eZGTZ9Enw0KjetzvtPxTB6pC4GhNXKXF1SFwdNHTUhMTtVuB_nf8WfQLB4IQI</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2398419407</pqid></control><display><type>article</type><title>High-performance optoelectronic devices based on van der Waals vertical MoS2/MoSe2 heterostructures</title><source>Springer Online Journals</source><creator>Li, Fang ; Xu, Boyi ; Yang, Wen ; Qi, Zhaoyang ; Ma, Chao ; Wang, Yajuan ; Zhang, Xuehong ; Luo, Zhuoran ; Liang, Delang ; Li, Dong ; Li, Ziwei ; Pan, Anlian</creator><creatorcontrib>Li, Fang ; Xu, Boyi ; Yang, Wen ; Qi, Zhaoyang ; Ma, Chao ; Wang, Yajuan ; Zhang, Xuehong ; Luo, Zhuoran ; Liang, Delang ; Li, Dong ; Li, Ziwei ; Pan, Anlian</creatorcontrib><description>Monolayer MoS
2
is a direct band gap semiconductor with large exciton binding energy, which is a promising candidate for the application of ultrathin optoelectronic devices. However, the optoelectronic performance of monolayer MoS
2
is seriously limited to its growth quality and carrier mobility. In this work, we report the direct vapor growth and the optoelectronic device of vertically-stacked MoS
2
/MoSe
2
heterostructure, and further discuss the mechanism of improved device performance. The optical and high-resolution atomic characterizations demonstrate that the heterostructure interface is of high-quality without atomic alloying. Electrical transport measurements indicate that the heterostructure transistor exhibits a high mobility of 28.5 cm
2
/(V·s) and a high on/off ratio of 10
7
. The optoelectronic characterizations prove that the heterostructure device presents an enhanced photoresponsivity of 36 A/W and a remarkable detectivity of 4.8 × 10
11
Jones, which benefited from the interface induced built-in electric field and carrier dependent Coulomb screening effect. This work demonstrates that the construction of two-dimensional (2D) semiconductor heterostructures plays a significant role in modifying the optoelectronic device properties of 2D materials.</description><identifier>ISSN: 1998-0124</identifier><identifier>EISSN: 1998-0000</identifier><identifier>DOI: 10.1007/s12274-020-2743-7</identifier><language>eng</language><publisher>Beijing: Tsinghua University Press</publisher><subject>Atomic/Molecular Structure and Spectra ; Biomedicine ; Biotechnology ; Carrier mobility ; Chemical vapor deposition ; Chemistry and Materials Science ; Condensed Matter Physics ; Design ; Electric fields ; Excitons ; Heterostructures ; Laboratories ; Materials Science ; Microscopy ; Mobility ; Molybdenum compounds ; Molybdenum disulfide ; Monolayers ; Nanotechnology ; Optoelectronic devices ; Research Article ; Semiconductors ; Transistors ; Two dimensional materials</subject><ispartof>Nano research, 2020-04, Vol.13 (4), p.1053-1059</ispartof><rights>Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2020</rights><rights>Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2020.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c344t-efde69e029224c8a2834c6fe0b3cdea6b1d977f6491acb547cb63b4abff1b5073</citedby><cites>FETCH-LOGICAL-c344t-efde69e029224c8a2834c6fe0b3cdea6b1d977f6491acb547cb63b4abff1b5073</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s12274-020-2743-7$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s12274-020-2743-7$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,776,780,27901,27902,41464,42533,51294</link.rule.ids></links><search><creatorcontrib>Li, Fang</creatorcontrib><creatorcontrib>Xu, Boyi</creatorcontrib><creatorcontrib>Yang, Wen</creatorcontrib><creatorcontrib>Qi, Zhaoyang</creatorcontrib><creatorcontrib>Ma, Chao</creatorcontrib><creatorcontrib>Wang, Yajuan</creatorcontrib><creatorcontrib>Zhang, Xuehong</creatorcontrib><creatorcontrib>Luo, Zhuoran</creatorcontrib><creatorcontrib>Liang, Delang</creatorcontrib><creatorcontrib>Li, Dong</creatorcontrib><creatorcontrib>Li, Ziwei</creatorcontrib><creatorcontrib>Pan, Anlian</creatorcontrib><title>High-performance optoelectronic devices based on van der Waals vertical MoS2/MoSe2 heterostructures</title><title>Nano research</title><addtitle>Nano Res</addtitle><description>Monolayer MoS
2
is a direct band gap semiconductor with large exciton binding energy, which is a promising candidate for the application of ultrathin optoelectronic devices. However, the optoelectronic performance of monolayer MoS
2
is seriously limited to its growth quality and carrier mobility. In this work, we report the direct vapor growth and the optoelectronic device of vertically-stacked MoS
2
/MoSe
2
heterostructure, and further discuss the mechanism of improved device performance. The optical and high-resolution atomic characterizations demonstrate that the heterostructure interface is of high-quality without atomic alloying. Electrical transport measurements indicate that the heterostructure transistor exhibits a high mobility of 28.5 cm
2
/(V·s) and a high on/off ratio of 10
7
. The optoelectronic characterizations prove that the heterostructure device presents an enhanced photoresponsivity of 36 A/W and a remarkable detectivity of 4.8 × 10
11
Jones, which benefited from the interface induced built-in electric field and carrier dependent Coulomb screening effect. This work demonstrates that the construction of two-dimensional (2D) semiconductor heterostructures plays a significant role in modifying the optoelectronic device properties of 2D materials.</description><subject>Atomic/Molecular Structure and Spectra</subject><subject>Biomedicine</subject><subject>Biotechnology</subject><subject>Carrier mobility</subject><subject>Chemical vapor deposition</subject><subject>Chemistry and Materials Science</subject><subject>Condensed Matter Physics</subject><subject>Design</subject><subject>Electric fields</subject><subject>Excitons</subject><subject>Heterostructures</subject><subject>Laboratories</subject><subject>Materials Science</subject><subject>Microscopy</subject><subject>Mobility</subject><subject>Molybdenum compounds</subject><subject>Molybdenum disulfide</subject><subject>Monolayers</subject><subject>Nanotechnology</subject><subject>Optoelectronic devices</subject><subject>Research Article</subject><subject>Semiconductors</subject><subject>Transistors</subject><subject>Two dimensional materials</subject><issn>1998-0124</issn><issn>1998-0000</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><sourceid>BENPR</sourceid><recordid>eNp9UMtOwzAQjBBIlMIHcLPEOdSvxPERVUCRijgA4mjZzqZN1cbBdirx97gExAn2sLNazcxqJ8suCb4mGItZIJQKnmOK84QsF0fZhEhZ5TjV8c9MKD_NzkLYYFxSwqtJZhftap334Bvnd7qzgFwfHWzBRu-61qIa9q2FgIwOUCPXob3u0tKjN623Ae3Bx9bqLXp0z3SWGlC0hgjehegHGwcP4Tw7aRIXLr5xmr3e3b7MF_ny6f5hfrPMLeM85tDUUErAVFLKbaVpxbgtG8CG2Rp0aUgthWhKLom2puDCmpIZrk3TEFNgwabZ1ejbe_c-QIhq4wbfpZOKFpgVXIqy-pfFZMWJ5F9eZGTZ9Enw0KjetzvtPxTB6pC4GhNXKXF1SFwdNHTUhMTtVuB_nf8WfQLB4IQI</recordid><startdate>20200401</startdate><enddate>20200401</enddate><creator>Li, Fang</creator><creator>Xu, Boyi</creator><creator>Yang, Wen</creator><creator>Qi, Zhaoyang</creator><creator>Ma, Chao</creator><creator>Wang, Yajuan</creator><creator>Zhang, Xuehong</creator><creator>Luo, Zhuoran</creator><creator>Liang, Delang</creator><creator>Li, Dong</creator><creator>Li, Ziwei</creator><creator>Pan, Anlian</creator><general>Tsinghua University Press</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>3V.</scope><scope>7QF</scope><scope>7QO</scope><scope>7QQ</scope><scope>7SE</scope><scope>7SR</scope><scope>7U5</scope><scope>7X7</scope><scope>7XB</scope><scope>8AO</scope><scope>8BQ</scope><scope>8FD</scope><scope>8FE</scope><scope>8FG</scope><scope>8FH</scope><scope>8FI</scope><scope>8FJ</scope><scope>8FK</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AEUYN</scope><scope>AFKRA</scope><scope>AZQEC</scope><scope>BBNVY</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>BHPHI</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>FR3</scope><scope>FYUFA</scope><scope>GHDGH</scope><scope>GNUQQ</scope><scope>H8G</scope><scope>HCIFZ</scope><scope>JG9</scope><scope>K9.</scope><scope>KB.</scope><scope>L7M</scope><scope>LK8</scope><scope>M0S</scope><scope>M7P</scope><scope>P64</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope></search><sort><creationdate>20200401</creationdate><title>High-performance optoelectronic devices based on van der Waals vertical MoS2/MoSe2 heterostructures</title><author>Li, Fang ; Xu, Boyi ; Yang, Wen ; Qi, Zhaoyang ; Ma, Chao ; Wang, Yajuan ; Zhang, Xuehong ; Luo, Zhuoran ; Liang, Delang ; Li, Dong ; Li, Ziwei ; Pan, Anlian</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c344t-efde69e029224c8a2834c6fe0b3cdea6b1d977f6491acb547cb63b4abff1b5073</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><topic>Atomic/Molecular Structure and Spectra</topic><topic>Biomedicine</topic><topic>Biotechnology</topic><topic>Carrier mobility</topic><topic>Chemical vapor deposition</topic><topic>Chemistry and Materials Science</topic><topic>Condensed Matter Physics</topic><topic>Design</topic><topic>Electric fields</topic><topic>Excitons</topic><topic>Heterostructures</topic><topic>Laboratories</topic><topic>Materials 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Zhuoran</au><au>Liang, Delang</au><au>Li, Dong</au><au>Li, Ziwei</au><au>Pan, Anlian</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>High-performance optoelectronic devices based on van der Waals vertical MoS2/MoSe2 heterostructures</atitle><jtitle>Nano research</jtitle><stitle>Nano Res</stitle><date>2020-04-01</date><risdate>2020</risdate><volume>13</volume><issue>4</issue><spage>1053</spage><epage>1059</epage><pages>1053-1059</pages><issn>1998-0124</issn><eissn>1998-0000</eissn><abstract>Monolayer MoS
2
is a direct band gap semiconductor with large exciton binding energy, which is a promising candidate for the application of ultrathin optoelectronic devices. However, the optoelectronic performance of monolayer MoS
2
is seriously limited to its growth quality and carrier mobility. In this work, we report the direct vapor growth and the optoelectronic device of vertically-stacked MoS
2
/MoSe
2
heterostructure, and further discuss the mechanism of improved device performance. The optical and high-resolution atomic characterizations demonstrate that the heterostructure interface is of high-quality without atomic alloying. Electrical transport measurements indicate that the heterostructure transistor exhibits a high mobility of 28.5 cm
2
/(V·s) and a high on/off ratio of 10
7
. The optoelectronic characterizations prove that the heterostructure device presents an enhanced photoresponsivity of 36 A/W and a remarkable detectivity of 4.8 × 10
11
Jones, which benefited from the interface induced built-in electric field and carrier dependent Coulomb screening effect. This work demonstrates that the construction of two-dimensional (2D) semiconductor heterostructures plays a significant role in modifying the optoelectronic device properties of 2D materials.</abstract><cop>Beijing</cop><pub>Tsinghua University Press</pub><doi>10.1007/s12274-020-2743-7</doi><tpages>7</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 1998-0124 |
| ispartof | Nano research, 2020-04, Vol.13 (4), p.1053-1059 |
| issn | 1998-0124 1998-0000 |
| language | eng |
| recordid | cdi_proquest_journals_2503549768 |
| source | Springer Online Journals |
| subjects | Atomic/Molecular Structure and Spectra Biomedicine Biotechnology Carrier mobility Chemical vapor deposition Chemistry and Materials Science Condensed Matter Physics Design Electric fields Excitons Heterostructures Laboratories Materials Science Microscopy Mobility Molybdenum compounds Molybdenum disulfide Monolayers Nanotechnology Optoelectronic devices Research Article Semiconductors Transistors Two dimensional materials |
| title | High-performance optoelectronic devices based on van der Waals vertical MoS2/MoSe2 heterostructures |
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