Modeling of the Buried Multiple Junction (BMJ) Detector in Reach-Through (RT) Conditions
A physically-based model of the Buried Multiple Junction (BMJ) detector has been established with consideration of the device operation in reach-through (RT) conditions. In such a condition, the breakdown voltage of one junction can shift depending on its adjacent junction's bias voltage. The m...
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| Veröffentlicht in: | IEEE sensors journal 2021-04, Vol.21 (8), p.9723-9730 |
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| creator | da Silva, Thais Luana Vidal de Negreiros Pittet, Patrick Lu, Guo-Neng |
| description | A physically-based model of the Buried Multiple Junction (BMJ) detector has been established with consideration of the device operation in reach-through (RT) conditions. In such a condition, the breakdown voltage of one junction can shift depending on its adjacent junction's bias voltage. The modeling approach consists in detecting RT conditions, determining depletion limits, electrostatic potential barrier height and thermionic emission current. It allows computations of the detector's dark currents and spectral responses to monochromatic light illumination. Computations of the detector's static characteristics have been compared with TCAD simulations and they are in good agreement, which is a model validation. The proposed model explains and determines the detector's breakdown voltage shift behavior, as well as its changes of spectral responses depending on bias voltages. |
| doi_str_mv | 10.1109/JSEN.2020.2993892 |
| format | Article |
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In such a condition, the breakdown voltage of one junction can shift depending on its adjacent junction's bias voltage. The modeling approach consists in detecting RT conditions, determining depletion limits, electrostatic potential barrier height and thermionic emission current. It allows computations of the detector's dark currents and spectral responses to monochromatic light illumination. Computations of the detector's static characteristics have been compared with TCAD simulations and they are in good agreement, which is a model validation. The proposed model explains and determines the detector's breakdown voltage shift behavior, as well as its changes of spectral responses depending on bias voltages.</description><identifier>ISSN: 1530-437X</identifier><identifier>EISSN: 1558-1748</identifier><identifier>DOI: 10.1109/JSEN.2020.2993892</identifier><identifier>CODEN: ISJEAZ</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Bias ; Breakdown ; Buried multiple junction detector ; Computational modeling ; Dark current ; Depletion ; Detectors ; Electric potential ; Electrostatics ; Engineering Sciences ; Junctions ; Micro and nanotechnologies ; Microelectronics ; Modelling ; Potential barriers ; reach-through conditions ; Sensors ; spectral responses ; Static characteristics ; Thermionic emission ; Voltage</subject><ispartof>IEEE sensors journal, 2021-04, Vol.21 (8), p.9723-9730</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2021</rights><rights>Distributed under a Creative Commons Attribution 4.0 International License</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c279t-46b76bb4995cc30185aaec41904d317d7607537af0ceec30ba9d11f55224c8a3</cites><orcidid>0000-0002-9130-8873 ; 0000-0001-8151-4019</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/9091136$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>230,314,780,784,796,885,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/9091136$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttps://hal.science/hal-03622156$$DView record in HAL$$Hfree_for_read</backlink></links><search><creatorcontrib>da Silva, Thais Luana Vidal de Negreiros</creatorcontrib><creatorcontrib>Pittet, Patrick</creatorcontrib><creatorcontrib>Lu, Guo-Neng</creatorcontrib><title>Modeling of the Buried Multiple Junction (BMJ) Detector in Reach-Through (RT) Conditions</title><title>IEEE sensors journal</title><addtitle>JSEN</addtitle><description>A physically-based model of the Buried Multiple Junction (BMJ) detector has been established with consideration of the device operation in reach-through (RT) conditions. In such a condition, the breakdown voltage of one junction can shift depending on its adjacent junction's bias voltage. The modeling approach consists in detecting RT conditions, determining depletion limits, electrostatic potential barrier height and thermionic emission current. It allows computations of the detector's dark currents and spectral responses to monochromatic light illumination. Computations of the detector's static characteristics have been compared with TCAD simulations and they are in good agreement, which is a model validation. The proposed model explains and determines the detector's breakdown voltage shift behavior, as well as its changes of spectral responses depending on bias voltages.</description><subject>Bias</subject><subject>Breakdown</subject><subject>Buried multiple junction detector</subject><subject>Computational modeling</subject><subject>Dark current</subject><subject>Depletion</subject><subject>Detectors</subject><subject>Electric potential</subject><subject>Electrostatics</subject><subject>Engineering Sciences</subject><subject>Junctions</subject><subject>Micro and nanotechnologies</subject><subject>Microelectronics</subject><subject>Modelling</subject><subject>Potential barriers</subject><subject>reach-through conditions</subject><subject>Sensors</subject><subject>spectral responses</subject><subject>Static characteristics</subject><subject>Thermionic emission</subject><subject>Voltage</subject><issn>1530-437X</issn><issn>1558-1748</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kEFPwjAUxxejiYh-AOOliRc4DPvadV2PiCgS0AQ5cGtK17GSuWK3mfjt3QLh9F5efv9_Xn5BcA94BIDF0_xr-jEimOAREYImglwEPWAsCYFHyWW3UxxGlG-ug5uq2mMMgjPeCzZLl5rCljvkMlTnBj033poULZuitofCoHlT6tq6Eg2el_MhejG10bXzyJZoZZTOw3XuXbPL0WC1HqKJK1Pb4dVtcJWpojJ3p9kP1q_T9WQWLj7f3ifjRagJF3UYxVseb7eREExriiFhShkdgcBRSoGnPMacUa4yrI1pga0SKUDGGCGRThTtB8Njba4KefD2W_k_6ZSVs_FCdjdMY0KAxb_Qso9H9uDdT2OqWu5d48v2O0kYpgwDSURLwZHS3lWVN9m5FrDsXMvOtexcy5PrNvNwzFhjzJkXWADQmP4Dgnt3xA</recordid><startdate>20210415</startdate><enddate>20210415</enddate><creator>da Silva, Thais Luana Vidal de Negreiros</creator><creator>Pittet, Patrick</creator><creator>Lu, Guo-Neng</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><general>Institute of Electrical and Electronics Engineers</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope><scope>1XC</scope><orcidid>https://orcid.org/0000-0002-9130-8873</orcidid><orcidid>https://orcid.org/0000-0001-8151-4019</orcidid></search><sort><creationdate>20210415</creationdate><title>Modeling of the Buried Multiple Junction (BMJ) Detector in Reach-Through (RT) Conditions</title><author>da Silva, Thais Luana Vidal de Negreiros ; Pittet, Patrick ; Lu, Guo-Neng</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c279t-46b76bb4995cc30185aaec41904d317d7607537af0ceec30ba9d11f55224c8a3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><topic>Bias</topic><topic>Breakdown</topic><topic>Buried multiple junction detector</topic><topic>Computational modeling</topic><topic>Dark current</topic><topic>Depletion</topic><topic>Detectors</topic><topic>Electric potential</topic><topic>Electrostatics</topic><topic>Engineering Sciences</topic><topic>Junctions</topic><topic>Micro and nanotechnologies</topic><topic>Microelectronics</topic><topic>Modelling</topic><topic>Potential barriers</topic><topic>reach-through conditions</topic><topic>Sensors</topic><topic>spectral responses</topic><topic>Static characteristics</topic><topic>Thermionic emission</topic><topic>Voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>da Silva, Thais Luana Vidal de Negreiros</creatorcontrib><creatorcontrib>Pittet, Patrick</creatorcontrib><creatorcontrib>Lu, Guo-Neng</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Hyper Article en Ligne (HAL)</collection><jtitle>IEEE sensors journal</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>da Silva, Thais Luana Vidal de Negreiros</au><au>Pittet, Patrick</au><au>Lu, Guo-Neng</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Modeling of the Buried Multiple Junction (BMJ) Detector in Reach-Through (RT) Conditions</atitle><jtitle>IEEE sensors journal</jtitle><stitle>JSEN</stitle><date>2021-04-15</date><risdate>2021</risdate><volume>21</volume><issue>8</issue><spage>9723</spage><epage>9730</epage><pages>9723-9730</pages><issn>1530-437X</issn><eissn>1558-1748</eissn><coden>ISJEAZ</coden><abstract>A physically-based model of the Buried Multiple Junction (BMJ) detector has been established with consideration of the device operation in reach-through (RT) conditions. In such a condition, the breakdown voltage of one junction can shift depending on its adjacent junction's bias voltage. The modeling approach consists in detecting RT conditions, determining depletion limits, electrostatic potential barrier height and thermionic emission current. It allows computations of the detector's dark currents and spectral responses to monochromatic light illumination. Computations of the detector's static characteristics have been compared with TCAD simulations and they are in good agreement, which is a model validation. The proposed model explains and determines the detector's breakdown voltage shift behavior, as well as its changes of spectral responses depending on bias voltages.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/JSEN.2020.2993892</doi><tpages>8</tpages><orcidid>https://orcid.org/0000-0002-9130-8873</orcidid><orcidid>https://orcid.org/0000-0001-8151-4019</orcidid></addata></record> |
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| subjects | Bias Breakdown Buried multiple junction detector Computational modeling Dark current Depletion Detectors Electric potential Electrostatics Engineering Sciences Junctions Micro and nanotechnologies Microelectronics Modelling Potential barriers reach-through conditions Sensors spectral responses Static characteristics Thermionic emission Voltage |
| title | Modeling of the Buried Multiple Junction (BMJ) Detector in Reach-Through (RT) Conditions |
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