Unveiling the Role of Al2O3 Interlayer in Indium–Gallium–Zinc–Oxide Transistors

Although insertion of a thin insulating layer between metal electrodes and a semiconducting channel is an effective way to improve device performance, the exact reason for improvement in performance is not elucidated. Herein, the role of an Al2O3 interlayer sandwiched between Al metal electrodes and...

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Veröffentlicht in:	Physica status solidi. A, Applications and materials science Applications and materials science, 2021-03, Vol.218 (6), p.n/a
Hauptverfasser:	Kim, Tae Hyeon, Park, Woojin, Oh, Seyoung, Kim, So-Young, Yamada, Naohito, Kobayashi, Hikaru, Jang, Hye Yeon, Nam, Jae Hyeon, Habazaki, Hiroki, Lee, Byoung Hun, Cho, Byungjin
Format:	Artikel
Sprache:	eng
Schlagworte:	Al2O3 interlayers Aluminum oxide barrier height Circuits contact potential difference Current carriers Doping Electrical properties Electrodes Fermi-level alignment Gallium Indium indium–gallium–zinc–oxide Interlayers Process parameters Semiconductor devices Sol-gel processes Transistors Zinc
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