High temperature ferroelectric domain wall memory

For automotive and space applications, the nonvolatile ferroelectric domain wall random access memory (DWRAM) is required to work at a wide temperature range of −40 °C to +150 °C. However, the wall current generally decays with the retention time at high temperatures with the uncertain mechanism. He...

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Veröffentlicht in:	Journal of alloys and compounds 2021-03, Vol.856, p.158155, Article 158155
Hauptverfasser:	Jiang, Jun, Chai, Xiaojie, Wang, Chao, Jiang, Anquan
Format:	Artikel
Sprache:	eng
Schlagworte:	Charge injection Deoxidizing Domain wall conductivity Domain walls Ferroelectric domains Ferroelectric materials Ferroelectricity High temperature LiNbO3 single crystals Lithium niobates Nonvolatile memory Random access memory Retention Single crystals Space applications
Online-Zugang:	Volltext
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