Polarity‐induced grain growth of gadolinium‐doped ceria under field‐assisted sintering technology/spark plasma sintering (FAST/SPS) conditions

This study aims to understand the effect of the electrical field on microstructure evolution during field‐assisted sintering or spark plasma sintering (FAST/SPS) of 10 mol% gadolinium‐doped ceria (GDC) with experimental and numerical methods. The novelty of this study has been the observation of enhanced grain growth in the region closer to the anode, even under FAST/SPS conditions with electrical fields less than 5 V/cm. The grain growth kinetics, including determination of activation energy and grain‐boundary mobility, were analyzed along the cross section of the samples for different temperatures and dwell periods. With an increase in distance from the anode, reduction in the activation energy for grain growth and grain‐boundary mobility was observed. These observations attributed to the attraction of oxygen ions to the anode region under an electrical field with an increase in defects along the grain boundaries. Thereby an increase in the grain‐boundary mobility and larger grains in that region were observed. A homogenous microstructure was observed in a case where the current did not flow through the sample. Furthermore, a numerical strategy has also been developed to simulate this behavior in addition to heat generation, heat transfer, and densification using Finite Element Methods (FEM) simulations. The simulation results provided an insight into the presence of a potential difference across the cross section of the samples. The simulation results were also in good agreement with the experimental observations. Enhanced grain growth in the anode region during FAST/SPS of gadolinium‐doped ceria. Grain size as a function of dwell time obtained for sintering temperatures between (A) 1100 – 1300 °C and (B) 1400 °C