Characteristics of CdS and photo-transistor as photo sensor on the sensor unit (SU-6804) and OP amp unit (OU-6801)
Has succeeded in conducting a Routine practicum with the theme of the characteristics of Photo-transistor and CdS as Photo sensor on the Photo Sensor Unit (SU-6804) and OP Amp Unit (OU-6801) in the Sensor and Transducer Laboratory of the Department of Physics, FMIPA IPB University. The installed spe...
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| creator | Nabilah, Fasya Munir, Ryaas Mishbachul Firdaus, Annila Lestari, Vissella Zulia Lesmana, Aldi Destia Thalia, Ananda Dahrul, Muhammad Har, Nazopatul Patonah Bintari, Putri Lailatul Rahmawaty, Vania Pahlefi, Muh Raka Adithya Abdurrahman, Irfan Sejahtera Irmansyah Irzaman |
| description | Has succeeded in conducting a Routine practicum with the theme of the characteristics of Photo-transistor and CdS as Photo sensor on the Photo Sensor Unit (SU-6804) and OP Amp Unit (OU-6801) in the Sensor and Transducer Laboratory of the Department of Physics, FMIPA IPB University. The installed specifications of the Photo Sensor Unit (SU-6804) include: Photo Bias Level: DC 0∼30mA, AC Bias Frequency: 100Hz∼10kHz (with Digital Counter), photo Sensing Range: 0∼200mm variable distance, photo Coupling Speed: 0∼1000 pulse / sec, sensor devices: LED, Photo- transistor, CdS, and input Voltage: DC±15V, 1A. The OP Amp Unit aids the installed specifications of the photosensor unit (SU-6804) (OU-6801). Measurement of light using CdS and Photo-transistor as photosensor with measurement distance ranges from 5 mm to 55 mm with a stage of 5 mm and 6 replications. The measurement results show that the farther the measurement distance of the light from the light source, the lower the electrical voltage. Based on the analyzed graphs and table, Photo-transistor is the most accurate to be used as a photosensor. |
| doi_str_mv | 10.1063/5.0037498 |
| format | Conference Proceeding |
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The installed specifications of the Photo Sensor Unit (SU-6804) include: Photo Bias Level: DC 0∼30mA, AC Bias Frequency: 100Hz∼10kHz (with Digital Counter), photo Sensing Range: 0∼200mm variable distance, photo Coupling Speed: 0∼1000 pulse / sec, sensor devices: LED, Photo- transistor, CdS, and input Voltage: DC±15V, 1A. The OP Amp Unit aids the installed specifications of the photosensor unit (SU-6804) (OU-6801). Measurement of light using CdS and Photo-transistor as photosensor with measurement distance ranges from 5 mm to 55 mm with a stage of 5 mm and 6 replications. The measurement results show that the farther the measurement distance of the light from the light source, the lower the electrical voltage. Based on the analyzed graphs and table, Photo-transistor is the most accurate to be used as a photosensor.</description><identifier>ISSN: 0094-243X</identifier><identifier>EISSN: 1551-7616</identifier><identifier>DOI: 10.1063/5.0037498</identifier><identifier>CODEN: APCPCS</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Bias ; Electric potential ; Light amplifiers ; Light sources ; Semiconductor devices ; Sensors ; Specifications ; Transistors ; Voltage</subject><ispartof>AIP conference proceedings, 2021, Vol.2320 (1)</ispartof><rights>Author(s)</rights><rights>2020 Author(s). Published by AIP Publishing.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/acp/article-lookup/doi/10.1063/5.0037498$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>309,310,314,780,784,789,790,794,4512,23930,23931,25140,27924,27925,76384</link.rule.ids></links><search><contributor>Bakri, Fauzi</contributor><contributor>Indrasari, Widyaningrum</contributor><contributor>Muliyati, Dewi</contributor><contributor>Fahdiran, Riser</contributor><contributor>Prayitno, Teguh Budi</contributor><contributor>Budi, Esmar</contributor><contributor>Nasbey, Hadi</contributor><creatorcontrib>Nabilah, Fasya</creatorcontrib><creatorcontrib>Munir, Ryaas Mishbachul</creatorcontrib><creatorcontrib>Firdaus, Annila</creatorcontrib><creatorcontrib>Lestari, Vissella Zulia</creatorcontrib><creatorcontrib>Lesmana, Aldi Destia</creatorcontrib><creatorcontrib>Thalia, Ananda</creatorcontrib><creatorcontrib>Dahrul, Muhammad</creatorcontrib><creatorcontrib>Har, Nazopatul Patonah</creatorcontrib><creatorcontrib>Bintari, Putri Lailatul</creatorcontrib><creatorcontrib>Rahmawaty, Vania</creatorcontrib><creatorcontrib>Pahlefi, Muh Raka Adithya</creatorcontrib><creatorcontrib>Abdurrahman, Irfan</creatorcontrib><creatorcontrib>Sejahtera</creatorcontrib><creatorcontrib>Irmansyah</creatorcontrib><creatorcontrib>Irzaman</creatorcontrib><title>Characteristics of CdS and photo-transistor as photo sensor on the sensor unit (SU-6804) and OP amp unit (OU-6801)</title><title>AIP conference proceedings</title><description>Has succeeded in conducting a Routine practicum with the theme of the characteristics of Photo-transistor and CdS as Photo sensor on the Photo Sensor Unit (SU-6804) and OP Amp Unit (OU-6801) in the Sensor and Transducer Laboratory of the Department of Physics, FMIPA IPB University. The installed specifications of the Photo Sensor Unit (SU-6804) include: Photo Bias Level: DC 0∼30mA, AC Bias Frequency: 100Hz∼10kHz (with Digital Counter), photo Sensing Range: 0∼200mm variable distance, photo Coupling Speed: 0∼1000 pulse / sec, sensor devices: LED, Photo- transistor, CdS, and input Voltage: DC±15V, 1A. The OP Amp Unit aids the installed specifications of the photosensor unit (SU-6804) (OU-6801). Measurement of light using CdS and Photo-transistor as photosensor with measurement distance ranges from 5 mm to 55 mm with a stage of 5 mm and 6 replications. The measurement results show that the farther the measurement distance of the light from the light source, the lower the electrical voltage. Based on the analyzed graphs and table, Photo-transistor is the most accurate to be used as a photosensor.</description><subject>Bias</subject><subject>Electric potential</subject><subject>Light amplifiers</subject><subject>Light sources</subject><subject>Semiconductor devices</subject><subject>Sensors</subject><subject>Specifications</subject><subject>Transistors</subject><subject>Voltage</subject><issn>0094-243X</issn><issn>1551-7616</issn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2021</creationdate><recordtype>conference_proceeding</recordtype><recordid>eNo1kEtLAzEUhYMoWKsL_0HAjRVS805mKUN9QKFCLbgLt_OgU2wyJunCf-_Y1tXl3O9wDhyEbhmdMqrFo5pSKows7BkaMaUYMZrpczSitJCES_F5ia5S2lLKC2PsCMVyAxGq3MQu5a5KOLS4rJcYfI37TciB5Ag-DTBEDOn4w6nxadDB47xp_tXedxnfL1dEWyonh4TFO4ZdfyKLA2GTa3TRwldqbk53jFbPs4_ylcwXL2_l05z0TFtLGKx1JRQtdGWsttrULQfJQLZrpak1QgK3QjHDW9WCUhzWNR88jaKsKowSY3R3zO1j-N43Kbtt2Ec_VDouC8WUpEYOroejK1VdhtwF7_rY7SD-OEbd36ZOudOm4heB9WVf</recordid><startdate>20210302</startdate><enddate>20210302</enddate><creator>Nabilah, Fasya</creator><creator>Munir, Ryaas Mishbachul</creator><creator>Firdaus, Annila</creator><creator>Lestari, Vissella Zulia</creator><creator>Lesmana, Aldi Destia</creator><creator>Thalia, Ananda</creator><creator>Dahrul, Muhammad</creator><creator>Har, Nazopatul Patonah</creator><creator>Bintari, Putri Lailatul</creator><creator>Rahmawaty, Vania</creator><creator>Pahlefi, Muh Raka Adithya</creator><creator>Abdurrahman, Irfan</creator><creator>Sejahtera</creator><creator>Irmansyah</creator><creator>Irzaman</creator><general>American Institute of Physics</general><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>20210302</creationdate><title>Characteristics of CdS and photo-transistor as photo sensor on the sensor unit (SU-6804) and OP amp unit (OU-6801)</title><author>Nabilah, Fasya ; Munir, Ryaas Mishbachul ; Firdaus, Annila ; Lestari, Vissella Zulia ; Lesmana, Aldi Destia ; Thalia, Ananda ; Dahrul, Muhammad ; Har, Nazopatul Patonah ; Bintari, Putri Lailatul ; Rahmawaty, Vania ; Pahlefi, Muh Raka Adithya ; Abdurrahman, Irfan ; Sejahtera ; Irmansyah ; Irzaman</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-p1688-1ab6c35096c786867df2a41a4fb5608734a2835172f5fa552abd2df2e501c9753</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2021</creationdate><topic>Bias</topic><topic>Electric potential</topic><topic>Light amplifiers</topic><topic>Light sources</topic><topic>Semiconductor devices</topic><topic>Sensors</topic><topic>Specifications</topic><topic>Transistors</topic><topic>Voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Nabilah, Fasya</creatorcontrib><creatorcontrib>Munir, Ryaas Mishbachul</creatorcontrib><creatorcontrib>Firdaus, Annila</creatorcontrib><creatorcontrib>Lestari, Vissella Zulia</creatorcontrib><creatorcontrib>Lesmana, Aldi Destia</creatorcontrib><creatorcontrib>Thalia, Ananda</creatorcontrib><creatorcontrib>Dahrul, Muhammad</creatorcontrib><creatorcontrib>Har, Nazopatul Patonah</creatorcontrib><creatorcontrib>Bintari, Putri Lailatul</creatorcontrib><creatorcontrib>Rahmawaty, Vania</creatorcontrib><creatorcontrib>Pahlefi, Muh Raka Adithya</creatorcontrib><creatorcontrib>Abdurrahman, Irfan</creatorcontrib><creatorcontrib>Sejahtera</creatorcontrib><creatorcontrib>Irmansyah</creatorcontrib><creatorcontrib>Irzaman</creatorcontrib><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Nabilah, Fasya</au><au>Munir, Ryaas Mishbachul</au><au>Firdaus, Annila</au><au>Lestari, Vissella Zulia</au><au>Lesmana, Aldi Destia</au><au>Thalia, Ananda</au><au>Dahrul, Muhammad</au><au>Har, Nazopatul Patonah</au><au>Bintari, Putri Lailatul</au><au>Rahmawaty, Vania</au><au>Pahlefi, Muh Raka Adithya</au><au>Abdurrahman, Irfan</au><au>Sejahtera</au><au>Irmansyah</au><au>Irzaman</au><au>Bakri, Fauzi</au><au>Indrasari, Widyaningrum</au><au>Muliyati, Dewi</au><au>Fahdiran, Riser</au><au>Prayitno, Teguh Budi</au><au>Budi, Esmar</au><au>Nasbey, Hadi</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Characteristics of CdS and photo-transistor as photo sensor on the sensor unit (SU-6804) and OP amp unit (OU-6801)</atitle><btitle>AIP conference proceedings</btitle><date>2021-03-02</date><risdate>2021</risdate><volume>2320</volume><issue>1</issue><issn>0094-243X</issn><eissn>1551-7616</eissn><coden>APCPCS</coden><abstract>Has succeeded in conducting a Routine practicum with the theme of the characteristics of Photo-transistor and CdS as Photo sensor on the Photo Sensor Unit (SU-6804) and OP Amp Unit (OU-6801) in the Sensor and Transducer Laboratory of the Department of Physics, FMIPA IPB University. The installed specifications of the Photo Sensor Unit (SU-6804) include: Photo Bias Level: DC 0∼30mA, AC Bias Frequency: 100Hz∼10kHz (with Digital Counter), photo Sensing Range: 0∼200mm variable distance, photo Coupling Speed: 0∼1000 pulse / sec, sensor devices: LED, Photo- transistor, CdS, and input Voltage: DC±15V, 1A. The OP Amp Unit aids the installed specifications of the photosensor unit (SU-6804) (OU-6801). Measurement of light using CdS and Photo-transistor as photosensor with measurement distance ranges from 5 mm to 55 mm with a stage of 5 mm and 6 replications. The measurement results show that the farther the measurement distance of the light from the light source, the lower the electrical voltage. Based on the analyzed graphs and table, Photo-transistor is the most accurate to be used as a photosensor.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/5.0037498</doi><tpages>6</tpages><oa>free_for_read</oa></addata></record> |
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| language | eng |
| recordid | cdi_proquest_journals_2495154074 |
| source | AIP Journals Complete |
| subjects | Bias Electric potential Light amplifiers Light sources Semiconductor devices Sensors Specifications Transistors Voltage |
| title | Characteristics of CdS and photo-transistor as photo sensor on the sensor unit (SU-6804) and OP amp unit (OU-6801) |
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