Erratum to: Effect of Conductivity Type and Doping Level of Silicon Crystals on the Size of Formed Pore Channels during Anodic Etching in Hydrofluoric Acid Solutions

Erratum to: Effect of Conductivity Type and Doping Level of Silicon Crystals on the Size of Formed Pore Channels during Anodic Etching in Hydrofluoric Acid Solutions

An Erratum to this paper has been published: https://doi.org/10.1134/S106378422102016X

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Veröffentlicht in:Technical physics 2021-02, Vol.66 (2), p.367-367
Hauptverfasser: Zegrya, G. G., Ulin, V. P., Zegrya, A. G., Ulin, N. V., Frayman, V. M., Mikhailov, Yu. M.
Format: Artikel
Sprache:eng
Schlagworte:
Classical and Continuum Physics
Electric properties
Erratum
Fluorides
Physics
Physics and Astronomy
Silicon
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Beschreibung
Zusammenfassung:An Erratum to this paper has been published: https://doi.org/10.1134/S106378422102016X
ISSN:1063-7842
1090-6525
DOI:10.1134/S106378422102016X