Modification of (Zr0.8Sn0.2)TiO4 high-frequency dielectric ceramics doped with CuO-TiO2
The influence of three different molar ratio of CuO-TiO 2 additives (1:1, 1:2 and 2:1) on sintering temperature and high-frequency properties of (Zr 0.8 Sn 0.2 )TiO 4 (ZST) ceramics prepared via a conventional solid-stated reaction method were investigated. In this paper, the phase composition, micr...
Gespeichert in:
| Veröffentlicht in: | Journal of materials science. Materials in electronics 2021-02, Vol.32 (4), p.4090-4096 |
|---|---|
| Hauptverfasser: | , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 4096 |
|---|---|
| container_issue | 4 |
| container_start_page | 4090 |
| container_title | Journal of materials science. Materials in electronics |
| container_volume | 32 |
| creator | Zhang, Kai Liu, Xiangchun Bai, Ningna Li, Zhengguang Wu, Qi Yang, Zhe |
| description | The influence of three different molar ratio of CuO-TiO
2
additives (1:1, 1:2 and 2:1) on sintering temperature and high-frequency properties of (Zr
0.8
Sn
0.2
)TiO
4
(ZST) ceramics prepared via a conventional solid-stated reaction method were investigated. In this paper, the phase composition, microstructures, densification and high-frequency properties were comprehensively studied. The CuO-TiO
2
dopant with low eutectic point generated liquid phase during the sintering of ZST ceramics, which promoted the densification process of the ceramics without changing the basic crystal structure. Compared with pure phase ZST ceramics, the CuO-TiO
2
doping can reduce the sintering temperature and coordinate the dielectric properties simultaneously. With the increase of CuO content, the amount of liquid phase formed during the sintering process was directly affected and further affected the microstructure and properties of ceramics. Results showed that the optimal dielectric ceramics adding 2 wt% CT sintering aid with comprehensive performance (1 MHz) of
ε
r
= 42.52,
tanδ =
1.1 × 10
− 5
,
ρ
R
= 97.8% at 1250 °C were obtained. |
| doi_str_mv | 10.1007/s10854-020-05150-4 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2493884388</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2493884388</sourcerecordid><originalsourceid>FETCH-LOGICAL-c356t-321a6c0450e3f0a862fac2308220010489930eca8d4553a9f968520feb05bfe33</originalsourceid><addsrcrecordid>eNp9kE1LAzEQhoMoWKt_wFPAix5SJ1_b7FEWv6DSgxXFS0izSZvS7tZki_TfG13Bm6e5vM87Mw9C5xRGFGB8nSgoKQgwICCpBCIO0IDKMSdCsbdDNIBSjomQjB2jk5RWAFAIrgbo9amtgw_WdKFtcOvx5XuEkXpuYMSuZmEq8DIslsRH97Fzjd3jOri1s10MFlsXzSbYhOt262r8GbolrnZTkjF2io68WSd39juH6OXudlY9kMn0_rG6mRDLZdERzqgpLAgJjnswqmDeWMZBMQZAQaiy5OCsUbWQkpvSl4WSDLybg5x7x_kQXfS929jmC1OnV-0uNnmlZqLkSuUvVU6xPmVjm1J0Xm9j2Ji41xT0t0DdC9RZoP4RqEWGeA-lHG4WLv5V_0N9AYwPcGA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2493884388</pqid></control><display><type>article</type><title>Modification of (Zr0.8Sn0.2)TiO4 high-frequency dielectric ceramics doped with CuO-TiO2</title><source>SpringerLink Journals</source><creator>Zhang, Kai ; Liu, Xiangchun ; Bai, Ningna ; Li, Zhengguang ; Wu, Qi ; Yang, Zhe</creator><creatorcontrib>Zhang, Kai ; Liu, Xiangchun ; Bai, Ningna ; Li, Zhengguang ; Wu, Qi ; Yang, Zhe</creatorcontrib><description>The influence of three different molar ratio of CuO-TiO
2
additives (1:1, 1:2 and 2:1) on sintering temperature and high-frequency properties of (Zr
0.8
Sn
0.2
)TiO
4
(ZST) ceramics prepared via a conventional solid-stated reaction method were investigated. In this paper, the phase composition, microstructures, densification and high-frequency properties were comprehensively studied. The CuO-TiO
2
dopant with low eutectic point generated liquid phase during the sintering of ZST ceramics, which promoted the densification process of the ceramics without changing the basic crystal structure. Compared with pure phase ZST ceramics, the CuO-TiO
2
doping can reduce the sintering temperature and coordinate the dielectric properties simultaneously. With the increase of CuO content, the amount of liquid phase formed during the sintering process was directly affected and further affected the microstructure and properties of ceramics. Results showed that the optimal dielectric ceramics adding 2 wt% CT sintering aid with comprehensive performance (1 MHz) of
ε
r
= 42.52,
tanδ =
1.1 × 10
− 5
,
ρ
R
= 97.8% at 1250 °C were obtained.</description><identifier>ISSN: 0957-4522</identifier><identifier>EISSN: 1573-482X</identifier><identifier>DOI: 10.1007/s10854-020-05150-4</identifier><language>eng</language><publisher>New York: Springer US</publisher><subject>Additives ; Ceramics ; Characterization and Evaluation of Materials ; Chemistry and Materials Science ; Crystal structure ; Densification ; Dielectric properties ; Liquid phases ; Materials Science ; Optical and Electronic Materials ; Phase composition ; Sintering ; Titanium dioxide</subject><ispartof>Journal of materials science. Materials in electronics, 2021-02, Vol.32 (4), p.4090-4096</ispartof><rights>The Author(s), under exclusive licence to Springer Science+Business Media, LLC part of Springer Nature 2021</rights><rights>The Author(s), under exclusive licence to Springer Science+Business Media, LLC part of Springer Nature 2021.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c356t-321a6c0450e3f0a862fac2308220010489930eca8d4553a9f968520feb05bfe33</citedby><cites>FETCH-LOGICAL-c356t-321a6c0450e3f0a862fac2308220010489930eca8d4553a9f968520feb05bfe33</cites><orcidid>0000-0001-5822-6094</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s10854-020-05150-4$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s10854-020-05150-4$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,776,780,27901,27902,41464,42533,51294</link.rule.ids></links><search><creatorcontrib>Zhang, Kai</creatorcontrib><creatorcontrib>Liu, Xiangchun</creatorcontrib><creatorcontrib>Bai, Ningna</creatorcontrib><creatorcontrib>Li, Zhengguang</creatorcontrib><creatorcontrib>Wu, Qi</creatorcontrib><creatorcontrib>Yang, Zhe</creatorcontrib><title>Modification of (Zr0.8Sn0.2)TiO4 high-frequency dielectric ceramics doped with CuO-TiO2</title><title>Journal of materials science. Materials in electronics</title><addtitle>J Mater Sci: Mater Electron</addtitle><description>The influence of three different molar ratio of CuO-TiO
2
additives (1:1, 1:2 and 2:1) on sintering temperature and high-frequency properties of (Zr
0.8
Sn
0.2
)TiO
4
(ZST) ceramics prepared via a conventional solid-stated reaction method were investigated. In this paper, the phase composition, microstructures, densification and high-frequency properties were comprehensively studied. The CuO-TiO
2
dopant with low eutectic point generated liquid phase during the sintering of ZST ceramics, which promoted the densification process of the ceramics without changing the basic crystal structure. Compared with pure phase ZST ceramics, the CuO-TiO
2
doping can reduce the sintering temperature and coordinate the dielectric properties simultaneously. With the increase of CuO content, the amount of liquid phase formed during the sintering process was directly affected and further affected the microstructure and properties of ceramics. Results showed that the optimal dielectric ceramics adding 2 wt% CT sintering aid with comprehensive performance (1 MHz) of
ε
r
= 42.52,
tanδ =
1.1 × 10
− 5
,
ρ
R
= 97.8% at 1250 °C were obtained.</description><subject>Additives</subject><subject>Ceramics</subject><subject>Characterization and Evaluation of Materials</subject><subject>Chemistry and Materials Science</subject><subject>Crystal structure</subject><subject>Densification</subject><subject>Dielectric properties</subject><subject>Liquid phases</subject><subject>Materials Science</subject><subject>Optical and Electronic Materials</subject><subject>Phase composition</subject><subject>Sintering</subject><subject>Titanium dioxide</subject><issn>0957-4522</issn><issn>1573-482X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><sourceid>BENPR</sourceid><recordid>eNp9kE1LAzEQhoMoWKt_wFPAix5SJ1_b7FEWv6DSgxXFS0izSZvS7tZki_TfG13Bm6e5vM87Mw9C5xRGFGB8nSgoKQgwICCpBCIO0IDKMSdCsbdDNIBSjomQjB2jk5RWAFAIrgbo9amtgw_WdKFtcOvx5XuEkXpuYMSuZmEq8DIslsRH97Fzjd3jOri1s10MFlsXzSbYhOt262r8GbolrnZTkjF2io68WSd39juH6OXudlY9kMn0_rG6mRDLZdERzqgpLAgJjnswqmDeWMZBMQZAQaiy5OCsUbWQkpvSl4WSDLybg5x7x_kQXfS929jmC1OnV-0uNnmlZqLkSuUvVU6xPmVjm1J0Xm9j2Ji41xT0t0DdC9RZoP4RqEWGeA-lHG4WLv5V_0N9AYwPcGA</recordid><startdate>20210201</startdate><enddate>20210201</enddate><creator>Zhang, Kai</creator><creator>Liu, Xiangchun</creator><creator>Bai, Ningna</creator><creator>Li, Zhengguang</creator><creator>Wu, Qi</creator><creator>Yang, Zhe</creator><general>Springer US</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>F28</scope><scope>FR3</scope><scope>HCIFZ</scope><scope>JG9</scope><scope>KB.</scope><scope>L7M</scope><scope>P5Z</scope><scope>P62</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>S0W</scope><orcidid>https://orcid.org/0000-0001-5822-6094</orcidid></search><sort><creationdate>20210201</creationdate><title>Modification of (Zr0.8Sn0.2)TiO4 high-frequency dielectric ceramics doped with CuO-TiO2</title><author>Zhang, Kai ; Liu, Xiangchun ; Bai, Ningna ; Li, Zhengguang ; Wu, Qi ; Yang, Zhe</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c356t-321a6c0450e3f0a862fac2308220010489930eca8d4553a9f968520feb05bfe33</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><topic>Additives</topic><topic>Ceramics</topic><topic>Characterization and Evaluation of Materials</topic><topic>Chemistry and Materials Science</topic><topic>Crystal structure</topic><topic>Densification</topic><topic>Dielectric properties</topic><topic>Liquid phases</topic><topic>Materials Science</topic><topic>Optical and Electronic Materials</topic><topic>Phase composition</topic><topic>Sintering</topic><topic>Titanium dioxide</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zhang, Kai</creatorcontrib><creatorcontrib>Liu, Xiangchun</creatorcontrib><creatorcontrib>Bai, Ningna</creatorcontrib><creatorcontrib>Li, Zhengguang</creatorcontrib><creatorcontrib>Wu, Qi</creatorcontrib><creatorcontrib>Yang, Zhe</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central UK/Ireland</collection><collection>Advanced Technologies & Aerospace Collection</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>SciTech Premium Collection</collection><collection>Materials Research Database</collection><collection>Materials Science Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Advanced Technologies & Aerospace Database</collection><collection>ProQuest Advanced Technologies & Aerospace Collection</collection><collection>Materials Science Collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>DELNET Engineering & Technology Collection</collection><jtitle>Journal of materials science. Materials in electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Zhang, Kai</au><au>Liu, Xiangchun</au><au>Bai, Ningna</au><au>Li, Zhengguang</au><au>Wu, Qi</au><au>Yang, Zhe</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Modification of (Zr0.8Sn0.2)TiO4 high-frequency dielectric ceramics doped with CuO-TiO2</atitle><jtitle>Journal of materials science. Materials in electronics</jtitle><stitle>J Mater Sci: Mater Electron</stitle><date>2021-02-01</date><risdate>2021</risdate><volume>32</volume><issue>4</issue><spage>4090</spage><epage>4096</epage><pages>4090-4096</pages><issn>0957-4522</issn><eissn>1573-482X</eissn><abstract>The influence of three different molar ratio of CuO-TiO
2
additives (1:1, 1:2 and 2:1) on sintering temperature and high-frequency properties of (Zr
0.8
Sn
0.2
)TiO
4
(ZST) ceramics prepared via a conventional solid-stated reaction method were investigated. In this paper, the phase composition, microstructures, densification and high-frequency properties were comprehensively studied. The CuO-TiO
2
dopant with low eutectic point generated liquid phase during the sintering of ZST ceramics, which promoted the densification process of the ceramics without changing the basic crystal structure. Compared with pure phase ZST ceramics, the CuO-TiO
2
doping can reduce the sintering temperature and coordinate the dielectric properties simultaneously. With the increase of CuO content, the amount of liquid phase formed during the sintering process was directly affected and further affected the microstructure and properties of ceramics. Results showed that the optimal dielectric ceramics adding 2 wt% CT sintering aid with comprehensive performance (1 MHz) of
ε
r
= 42.52,
tanδ =
1.1 × 10
− 5
,
ρ
R
= 97.8% at 1250 °C were obtained.</abstract><cop>New York</cop><pub>Springer US</pub><doi>10.1007/s10854-020-05150-4</doi><tpages>7</tpages><orcidid>https://orcid.org/0000-0001-5822-6094</orcidid></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0957-4522 |
| ispartof | Journal of materials science. Materials in electronics, 2021-02, Vol.32 (4), p.4090-4096 |
| issn | 0957-4522 1573-482X |
| language | eng |
| recordid | cdi_proquest_journals_2493884388 |
| source | SpringerLink Journals |
| subjects | Additives Ceramics Characterization and Evaluation of Materials Chemistry and Materials Science Crystal structure Densification Dielectric properties Liquid phases Materials Science Optical and Electronic Materials Phase composition Sintering Titanium dioxide |
| title | Modification of (Zr0.8Sn0.2)TiO4 high-frequency dielectric ceramics doped with CuO-TiO2 |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-03T08%3A05%3A57IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Modification%20of%20(Zr0.8Sn0.2)TiO4%20high-frequency%20dielectric%20ceramics%20doped%20with%20CuO-TiO2&rft.jtitle=Journal%20of%20materials%20science.%20Materials%20in%20electronics&rft.au=Zhang,%20Kai&rft.date=2021-02-01&rft.volume=32&rft.issue=4&rft.spage=4090&rft.epage=4096&rft.pages=4090-4096&rft.issn=0957-4522&rft.eissn=1573-482X&rft_id=info:doi/10.1007/s10854-020-05150-4&rft_dat=%3Cproquest_cross%3E2493884388%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2493884388&rft_id=info:pmid/&rfr_iscdi=true |