Effects of Cu doping on the structural, photoluminescence and impedance spectroscopy of CoS2 thin films
Copper-doped cobalt sulfide (Cu x Co 1− x S 2 : x = 0–0.1) nanocrystalline thin films were deposited on glass substrates using successive ionic layer adsorption and reaction (SILAR) technique. The influence Cu element concentration on nanostructural, morphological, photoluminescence and impedance p...
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| Veröffentlicht in: | Journal of materials science. Materials in electronics 2021-02, Vol.32 (4), p.3948-3957 |
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| creator | Ali, Syed Mansoor AlGarawi, M. S. AlGamdi, S. S. Khan, M. A. Majeed Uzzaman, Tauriq Saeed, Khalid Ahmed, Jahangeer |
| description | Copper-doped cobalt sulfide (Cu
x
Co
1−
x
S
2
:
x
= 0–0.1) nanocrystalline thin films were deposited on glass substrates using successive ionic layer adsorption and reaction (SILAR) technique. The influence Cu element concentration on nanostructural, morphological, photoluminescence and impedance properties of Cu
x
Co
1−
x
S
2
thin films were examined by means of X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), electron dispersive X-ray (EDX) photoluminescence (PL) and impedance spectroscopy. XRD results revealed that all prepared films consist of pure cubic phase of CoS
2
pyrites structure and were well crystallized with the preferentially oriented along (200) plane. Cu doping resulted in a significant increase in the crystallinity of the films and a noticeably alteration in crystallite size. FESEM images revealed that the deposited thin film having spherical grain distribution and the grain sizes decreased from 56 to 34 nm with increasing Cu doping level. The EDX analysis confirmed the stoichiometry of prepared thin films. Photoluminescence (PL) spectra display the broad emission bands centered at 411 with a hump at 417 nm, due to the intrinsic defects. From the impedance spectroscopy analysis, we examined the equivalent circuit and frequency-dependent relaxation phenomenon in dielectric dipoles, loss of electrical energy and AC conductivity of the pure and Cu-doped thin films. Finally, all properties have been discussed, as an impartial of the research work, in terms of the Cu doping content. |
| doi_str_mv | 10.1007/s10854-020-05136-2 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2493884170</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2493884170</sourcerecordid><originalsourceid>FETCH-LOGICAL-c319t-1ae487ac6752009fa56799e444da692870453aa7d08042d365f30ea4974fbfbb3</originalsourceid><addsrcrecordid>eNp9kE1LAzEQhoMoWKt_wFPAq9HJ12b3KKV-QMGDCt5Cupu0W3aTNdk99N-bWsGbp2HgfZ8ZHoSuKdxRAHWfKJRSEGBAQFJeEHaCZlQqTkTJPk_RDCqpiJCMnaOLlHYAUAheztBm6Zytx4SDw4sJN2Fo_QYHj8etxWmMUz1O0XS3eNiGMXRT33qbautri41vcNsPtjGHLQ0ZE0Oqw7D_gYU3liGtx67t-nSJzpzpkr36nXP08bh8XzyT1evTy-JhRWpOq5FQY0WpTF0oyQAqZ2ShqsoKIRpTVKxUICQ3RjVQgmANL6TjYI2olHBrt17zObo5cocYviabRr0LU_T5pGai4mUpqIKcYsdUnT9O0To9xLY3ca8p6INQfRSqs1D9I1SzXOLHUsphv7HxD_1P6xsQu3jN</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2493884170</pqid></control><display><type>article</type><title>Effects of Cu doping on the structural, photoluminescence and impedance spectroscopy of CoS2 thin films</title><source>SpringerNature Journals</source><creator>Ali, Syed Mansoor ; AlGarawi, M. S. ; AlGamdi, S. S. ; Khan, M. A. Majeed ; Uzzaman, Tauriq ; Saeed, Khalid ; Ahmed, Jahangeer</creator><creatorcontrib>Ali, Syed Mansoor ; AlGarawi, M. S. ; AlGamdi, S. S. ; Khan, M. A. Majeed ; Uzzaman, Tauriq ; Saeed, Khalid ; Ahmed, Jahangeer</creatorcontrib><description>Copper-doped cobalt sulfide (Cu
x
Co
1−
x
S
2
:
x
= 0–0.1) nanocrystalline thin films were deposited on glass substrates using successive ionic layer adsorption and reaction (SILAR) technique. The influence Cu element concentration on nanostructural, morphological, photoluminescence and impedance properties of Cu
x
Co
1−
x
S
2
thin films were examined by means of X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), electron dispersive X-ray (EDX) photoluminescence (PL) and impedance spectroscopy. XRD results revealed that all prepared films consist of pure cubic phase of CoS
2
pyrites structure and were well crystallized with the preferentially oriented along (200) plane. Cu doping resulted in a significant increase in the crystallinity of the films and a noticeably alteration in crystallite size. FESEM images revealed that the deposited thin film having spherical grain distribution and the grain sizes decreased from 56 to 34 nm with increasing Cu doping level. The EDX analysis confirmed the stoichiometry of prepared thin films. Photoluminescence (PL) spectra display the broad emission bands centered at 411 with a hump at 417 nm, due to the intrinsic defects. From the impedance spectroscopy analysis, we examined the equivalent circuit and frequency-dependent relaxation phenomenon in dielectric dipoles, loss of electrical energy and AC conductivity of the pure and Cu-doped thin films. Finally, all properties have been discussed, as an impartial of the research work, in terms of the Cu doping content.</description><identifier>ISSN: 0957-4522</identifier><identifier>EISSN: 1573-482X</identifier><identifier>DOI: 10.1007/s10854-020-05136-2</identifier><language>eng</language><publisher>New York: Springer US</publisher><subject>Characterization and Evaluation of Materials ; Chemistry and Materials Science ; Cobalt sulfide ; Copper ; Crystal defects ; Crystallites ; Crystallization ; Dipoles ; Doping ; Electrical resistivity ; Emission spectra ; Equivalent circuits ; Field emission microscopy ; Glass substrates ; Grain size ; Impedance spectroscopy ; Materials Science ; Optical and Electronic Materials ; Photoluminescence ; Pyrite ; Spectrum analysis ; Stoichiometry ; Thin films ; X-ray diffraction</subject><ispartof>Journal of materials science. Materials in electronics, 2021-02, Vol.32 (4), p.3948-3957</ispartof><rights>The Author(s), under exclusive licence to Springer Science+Business Media, LLC part of Springer Nature 2021</rights><rights>The Author(s), under exclusive licence to Springer Science+Business Media, LLC part of Springer Nature 2021.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c319t-1ae487ac6752009fa56799e444da692870453aa7d08042d365f30ea4974fbfbb3</citedby><cites>FETCH-LOGICAL-c319t-1ae487ac6752009fa56799e444da692870453aa7d08042d365f30ea4974fbfbb3</cites><orcidid>0000-0003-1416-640X</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s10854-020-05136-2$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s10854-020-05136-2$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,780,784,27924,27925,41488,42557,51319</link.rule.ids></links><search><creatorcontrib>Ali, Syed Mansoor</creatorcontrib><creatorcontrib>AlGarawi, M. S.</creatorcontrib><creatorcontrib>AlGamdi, S. S.</creatorcontrib><creatorcontrib>Khan, M. A. Majeed</creatorcontrib><creatorcontrib>Uzzaman, Tauriq</creatorcontrib><creatorcontrib>Saeed, Khalid</creatorcontrib><creatorcontrib>Ahmed, Jahangeer</creatorcontrib><title>Effects of Cu doping on the structural, photoluminescence and impedance spectroscopy of CoS2 thin films</title><title>Journal of materials science. Materials in electronics</title><addtitle>J Mater Sci: Mater Electron</addtitle><description>Copper-doped cobalt sulfide (Cu
x
Co
1−
x
S
2
:
x
= 0–0.1) nanocrystalline thin films were deposited on glass substrates using successive ionic layer adsorption and reaction (SILAR) technique. The influence Cu element concentration on nanostructural, morphological, photoluminescence and impedance properties of Cu
x
Co
1−
x
S
2
thin films were examined by means of X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), electron dispersive X-ray (EDX) photoluminescence (PL) and impedance spectroscopy. XRD results revealed that all prepared films consist of pure cubic phase of CoS
2
pyrites structure and were well crystallized with the preferentially oriented along (200) plane. Cu doping resulted in a significant increase in the crystallinity of the films and a noticeably alteration in crystallite size. FESEM images revealed that the deposited thin film having spherical grain distribution and the grain sizes decreased from 56 to 34 nm with increasing Cu doping level. The EDX analysis confirmed the stoichiometry of prepared thin films. Photoluminescence (PL) spectra display the broad emission bands centered at 411 with a hump at 417 nm, due to the intrinsic defects. From the impedance spectroscopy analysis, we examined the equivalent circuit and frequency-dependent relaxation phenomenon in dielectric dipoles, loss of electrical energy and AC conductivity of the pure and Cu-doped thin films. Finally, all properties have been discussed, as an impartial of the research work, in terms of the Cu doping content.</description><subject>Characterization and Evaluation of Materials</subject><subject>Chemistry and Materials Science</subject><subject>Cobalt sulfide</subject><subject>Copper</subject><subject>Crystal defects</subject><subject>Crystallites</subject><subject>Crystallization</subject><subject>Dipoles</subject><subject>Doping</subject><subject>Electrical resistivity</subject><subject>Emission spectra</subject><subject>Equivalent circuits</subject><subject>Field emission microscopy</subject><subject>Glass substrates</subject><subject>Grain size</subject><subject>Impedance spectroscopy</subject><subject>Materials Science</subject><subject>Optical and Electronic Materials</subject><subject>Photoluminescence</subject><subject>Pyrite</subject><subject>Spectrum analysis</subject><subject>Stoichiometry</subject><subject>Thin films</subject><subject>X-ray diffraction</subject><issn>0957-4522</issn><issn>1573-482X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><sourceid>AFKRA</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><recordid>eNp9kE1LAzEQhoMoWKt_wFPAq9HJ12b3KKV-QMGDCt5Cupu0W3aTNdk99N-bWsGbp2HgfZ8ZHoSuKdxRAHWfKJRSEGBAQFJeEHaCZlQqTkTJPk_RDCqpiJCMnaOLlHYAUAheztBm6Zytx4SDw4sJN2Fo_QYHj8etxWmMUz1O0XS3eNiGMXRT33qbautri41vcNsPtjGHLQ0ZE0Oqw7D_gYU3liGtx67t-nSJzpzpkr36nXP08bh8XzyT1evTy-JhRWpOq5FQY0WpTF0oyQAqZ2ShqsoKIRpTVKxUICQ3RjVQgmANL6TjYI2olHBrt17zObo5cocYviabRr0LU_T5pGai4mUpqIKcYsdUnT9O0To9xLY3ca8p6INQfRSqs1D9I1SzXOLHUsphv7HxD_1P6xsQu3jN</recordid><startdate>20210201</startdate><enddate>20210201</enddate><creator>Ali, Syed Mansoor</creator><creator>AlGarawi, M. S.</creator><creator>AlGamdi, S. S.</creator><creator>Khan, M. A. Majeed</creator><creator>Uzzaman, Tauriq</creator><creator>Saeed, Khalid</creator><creator>Ahmed, Jahangeer</creator><general>Springer US</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>F28</scope><scope>FR3</scope><scope>HCIFZ</scope><scope>JG9</scope><scope>KB.</scope><scope>L7M</scope><scope>P5Z</scope><scope>P62</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>S0W</scope><orcidid>https://orcid.org/0000-0003-1416-640X</orcidid></search><sort><creationdate>20210201</creationdate><title>Effects of Cu doping on the structural, photoluminescence and impedance spectroscopy of CoS2 thin films</title><author>Ali, Syed Mansoor ; AlGarawi, M. S. ; AlGamdi, S. S. ; Khan, M. A. Majeed ; Uzzaman, Tauriq ; Saeed, Khalid ; Ahmed, Jahangeer</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c319t-1ae487ac6752009fa56799e444da692870453aa7d08042d365f30ea4974fbfbb3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><topic>Characterization and Evaluation of Materials</topic><topic>Chemistry and Materials Science</topic><topic>Cobalt sulfide</topic><topic>Copper</topic><topic>Crystal defects</topic><topic>Crystallites</topic><topic>Crystallization</topic><topic>Dipoles</topic><topic>Doping</topic><topic>Electrical resistivity</topic><topic>Emission spectra</topic><topic>Equivalent circuits</topic><topic>Field emission microscopy</topic><topic>Glass substrates</topic><topic>Grain size</topic><topic>Impedance spectroscopy</topic><topic>Materials Science</topic><topic>Optical and Electronic Materials</topic><topic>Photoluminescence</topic><topic>Pyrite</topic><topic>Spectrum analysis</topic><topic>Stoichiometry</topic><topic>Thin films</topic><topic>X-ray diffraction</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ali, Syed Mansoor</creatorcontrib><creatorcontrib>AlGarawi, M. S.</creatorcontrib><creatorcontrib>AlGamdi, S. S.</creatorcontrib><creatorcontrib>Khan, M. A. Majeed</creatorcontrib><creatorcontrib>Uzzaman, Tauriq</creatorcontrib><creatorcontrib>Saeed, Khalid</creatorcontrib><creatorcontrib>Ahmed, Jahangeer</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central UK/Ireland</collection><collection>Advanced Technologies & Aerospace Collection</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>SciTech Premium Collection</collection><collection>Materials Research Database</collection><collection>Materials Science Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Advanced Technologies & Aerospace Database</collection><collection>ProQuest Advanced Technologies & Aerospace Collection</collection><collection>Materials Science Collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>DELNET Engineering & Technology Collection</collection><jtitle>Journal of materials science. Materials in electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Ali, Syed Mansoor</au><au>AlGarawi, M. S.</au><au>AlGamdi, S. S.</au><au>Khan, M. A. Majeed</au><au>Uzzaman, Tauriq</au><au>Saeed, Khalid</au><au>Ahmed, Jahangeer</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effects of Cu doping on the structural, photoluminescence and impedance spectroscopy of CoS2 thin films</atitle><jtitle>Journal of materials science. Materials in electronics</jtitle><stitle>J Mater Sci: Mater Electron</stitle><date>2021-02-01</date><risdate>2021</risdate><volume>32</volume><issue>4</issue><spage>3948</spage><epage>3957</epage><pages>3948-3957</pages><issn>0957-4522</issn><eissn>1573-482X</eissn><abstract>Copper-doped cobalt sulfide (Cu
x
Co
1−
x
S
2
:
x
= 0–0.1) nanocrystalline thin films were deposited on glass substrates using successive ionic layer adsorption and reaction (SILAR) technique. The influence Cu element concentration on nanostructural, morphological, photoluminescence and impedance properties of Cu
x
Co
1−
x
S
2
thin films were examined by means of X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), electron dispersive X-ray (EDX) photoluminescence (PL) and impedance spectroscopy. XRD results revealed that all prepared films consist of pure cubic phase of CoS
2
pyrites structure and were well crystallized with the preferentially oriented along (200) plane. Cu doping resulted in a significant increase in the crystallinity of the films and a noticeably alteration in crystallite size. FESEM images revealed that the deposited thin film having spherical grain distribution and the grain sizes decreased from 56 to 34 nm with increasing Cu doping level. The EDX analysis confirmed the stoichiometry of prepared thin films. Photoluminescence (PL) spectra display the broad emission bands centered at 411 with a hump at 417 nm, due to the intrinsic defects. From the impedance spectroscopy analysis, we examined the equivalent circuit and frequency-dependent relaxation phenomenon in dielectric dipoles, loss of electrical energy and AC conductivity of the pure and Cu-doped thin films. Finally, all properties have been discussed, as an impartial of the research work, in terms of the Cu doping content.</abstract><cop>New York</cop><pub>Springer US</pub><doi>10.1007/s10854-020-05136-2</doi><tpages>10</tpages><orcidid>https://orcid.org/0000-0003-1416-640X</orcidid></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0957-4522 |
| ispartof | Journal of materials science. Materials in electronics, 2021-02, Vol.32 (4), p.3948-3957 |
| issn | 0957-4522 1573-482X |
| language | eng |
| recordid | cdi_proquest_journals_2493884170 |
| source | SpringerNature Journals |
| subjects | Characterization and Evaluation of Materials Chemistry and Materials Science Cobalt sulfide Copper Crystal defects Crystallites Crystallization Dipoles Doping Electrical resistivity Emission spectra Equivalent circuits Field emission microscopy Glass substrates Grain size Impedance spectroscopy Materials Science Optical and Electronic Materials Photoluminescence Pyrite Spectrum analysis Stoichiometry Thin films X-ray diffraction |
| title | Effects of Cu doping on the structural, photoluminescence and impedance spectroscopy of CoS2 thin films |
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