The response of high barrier Schottky diodes to light illumination
We have investigated the illumination effect on electrical characteristics of nearly ideal Yb/ p -Si Schottky diodes with a high zero-bias barrier height ( Φ bo ). The value of reverse bias current increased as the illumination level increased for these diodes. The electrical parameters such as idea...
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| Veröffentlicht in: | Journal of materials science. Materials in electronics 2021-02, Vol.32 (4), p.4448-4456 |
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| creator | Lapa, Havva Elif Kökce, Ali Aldemir, Durmuş Ali Özdemir, Ahmet Faruk |
| description | We have investigated the illumination effect on electrical characteristics of nearly ideal Yb/
p
-Si Schottky diodes with a high zero-bias barrier height (
Φ
bo
). The value of reverse bias current increased as the illumination level increased for these diodes. The electrical parameters such as ideality factor (
n
) and
Φ
bo
were obtained as 1.09 and 0.80 eV in dark, respectively.
n
increases with increasing illumination level whereas
Φ
bo
decreases. The series resistance calculated using Cheung functions almost did not change with the illumination level. The characteristics of capacitance–voltage and conductance-voltage were obtained as a function of illumination level, applied bias voltage and frequency. The effect of illumination on the capacitance–voltage and conductance-voltage characteristics was clearly observed for 10 kHz frequency whereas the illumination did not affect the characteristics for 1 MHz frequency, significantly. The photovoltaic parameters such as open circuit voltage of 0.21 V, short circuit current of 1.60 × 10
–5
A, and fill factor of 62% were obtained for 1040 W/m
2
. These values have changed with increasing illumination level. The effect of illumination on the density of the interfacial states was observed. The experimental findings have showed that the diodes are sensitive to illumination and have photovoltaic behavior. The Yb/
p
-Si Schottky diodes are promising for photodiode applications. |
| doi_str_mv | 10.1007/s10854-020-05186-6 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2493884126</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2493884126</sourcerecordid><originalsourceid>FETCH-LOGICAL-c319t-767a7abd5243126f467fef35fcc69e14b7a0de93344717392a3919dd9f542c9f3</originalsourceid><addsrcrecordid>eNp9kE1LAzEURYMoWKt_wFXAdTTfmSy1aBUKLqzgLqQzSSd1OqlJuui_d-oI7ly9xb3nPjgAXBN8SzBWd5ngSnCEKUZYkEoieQImRCiGeEU_TsEEa6EQF5Seg4ucNxhjyVk1AQ_L1sHk8i722cHoYRvWLVzZlIJL8K1uYymfB9iE2LgMS4TdkBcYum6_Db0tIfaX4MzbLrur3zsF70-Py9kzWrzOX2b3C1QzogtSUlllV42gnBEqPZfKO8-Er2upHeErZXHjNGOcK6KYppZpoptGe8FprT2bgptxd5fi197lYjZxn_rhpaFcs6riw-zQomOrTjHn5LzZpbC16WAINkdXZnRlBlfmx5U5QmyE8lDu1y79Tf9DfQPtD2u9</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2493884126</pqid></control><display><type>article</type><title>The response of high barrier Schottky diodes to light illumination</title><source>SpringerLink Journals - AutoHoldings</source><creator>Lapa, Havva Elif ; Kökce, Ali ; Aldemir, Durmuş Ali ; Özdemir, Ahmet Faruk</creator><creatorcontrib>Lapa, Havva Elif ; Kökce, Ali ; Aldemir, Durmuş Ali ; Özdemir, Ahmet Faruk</creatorcontrib><description>We have investigated the illumination effect on electrical characteristics of nearly ideal Yb/
p
-Si Schottky diodes with a high zero-bias barrier height (
Φ
bo
). The value of reverse bias current increased as the illumination level increased for these diodes. The electrical parameters such as ideality factor (
n
) and
Φ
bo
were obtained as 1.09 and 0.80 eV in dark, respectively.
n
increases with increasing illumination level whereas
Φ
bo
decreases. The series resistance calculated using Cheung functions almost did not change with the illumination level. The characteristics of capacitance–voltage and conductance-voltage were obtained as a function of illumination level, applied bias voltage and frequency. The effect of illumination on the capacitance–voltage and conductance-voltage characteristics was clearly observed for 10 kHz frequency whereas the illumination did not affect the characteristics for 1 MHz frequency, significantly. The photovoltaic parameters such as open circuit voltage of 0.21 V, short circuit current of 1.60 × 10
–5
A, and fill factor of 62% were obtained for 1040 W/m
2
. These values have changed with increasing illumination level. The effect of illumination on the density of the interfacial states was observed. The experimental findings have showed that the diodes are sensitive to illumination and have photovoltaic behavior. The Yb/
p
-Si Schottky diodes are promising for photodiode applications.</description><identifier>ISSN: 0957-4522</identifier><identifier>EISSN: 1573-482X</identifier><identifier>DOI: 10.1007/s10854-020-05186-6</identifier><language>eng</language><publisher>New York: Springer US</publisher><subject>Bias ; Capacitance ; Characterization and Evaluation of Materials ; Chemistry and Materials Science ; Circuits ; Diodes ; Illumination ; Light ; Materials Science ; Mathematical analysis ; Open circuit voltage ; Optical and Electronic Materials ; Parameters ; Photodiodes ; Photovoltaic cells ; Resistance ; Schottky diodes ; Short circuit currents</subject><ispartof>Journal of materials science. Materials in electronics, 2021-02, Vol.32 (4), p.4448-4456</ispartof><rights>The Author(s), under exclusive licence to Springer Science+Business Media, LLC part of Springer Nature 2021</rights><rights>The Author(s), under exclusive licence to Springer Science+Business Media, LLC part of Springer Nature 2021.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c319t-767a7abd5243126f467fef35fcc69e14b7a0de93344717392a3919dd9f542c9f3</citedby><cites>FETCH-LOGICAL-c319t-767a7abd5243126f467fef35fcc69e14b7a0de93344717392a3919dd9f542c9f3</cites><orcidid>0000-0002-5706-4641</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s10854-020-05186-6$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s10854-020-05186-6$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,780,784,27924,27925,41488,42557,51319</link.rule.ids></links><search><creatorcontrib>Lapa, Havva Elif</creatorcontrib><creatorcontrib>Kökce, Ali</creatorcontrib><creatorcontrib>Aldemir, Durmuş Ali</creatorcontrib><creatorcontrib>Özdemir, Ahmet Faruk</creatorcontrib><title>The response of high barrier Schottky diodes to light illumination</title><title>Journal of materials science. Materials in electronics</title><addtitle>J Mater Sci: Mater Electron</addtitle><description>We have investigated the illumination effect on electrical characteristics of nearly ideal Yb/
p
-Si Schottky diodes with a high zero-bias barrier height (
Φ
bo
). The value of reverse bias current increased as the illumination level increased for these diodes. The electrical parameters such as ideality factor (
n
) and
Φ
bo
were obtained as 1.09 and 0.80 eV in dark, respectively.
n
increases with increasing illumination level whereas
Φ
bo
decreases. The series resistance calculated using Cheung functions almost did not change with the illumination level. The characteristics of capacitance–voltage and conductance-voltage were obtained as a function of illumination level, applied bias voltage and frequency. The effect of illumination on the capacitance–voltage and conductance-voltage characteristics was clearly observed for 10 kHz frequency whereas the illumination did not affect the characteristics for 1 MHz frequency, significantly. The photovoltaic parameters such as open circuit voltage of 0.21 V, short circuit current of 1.60 × 10
–5
A, and fill factor of 62% were obtained for 1040 W/m
2
. These values have changed with increasing illumination level. The effect of illumination on the density of the interfacial states was observed. The experimental findings have showed that the diodes are sensitive to illumination and have photovoltaic behavior. The Yb/
p
-Si Schottky diodes are promising for photodiode applications.</description><subject>Bias</subject><subject>Capacitance</subject><subject>Characterization and Evaluation of Materials</subject><subject>Chemistry and Materials Science</subject><subject>Circuits</subject><subject>Diodes</subject><subject>Illumination</subject><subject>Light</subject><subject>Materials Science</subject><subject>Mathematical analysis</subject><subject>Open circuit voltage</subject><subject>Optical and Electronic Materials</subject><subject>Parameters</subject><subject>Photodiodes</subject><subject>Photovoltaic cells</subject><subject>Resistance</subject><subject>Schottky diodes</subject><subject>Short circuit currents</subject><issn>0957-4522</issn><issn>1573-482X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><sourceid>AFKRA</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><recordid>eNp9kE1LAzEURYMoWKt_wFXAdTTfmSy1aBUKLqzgLqQzSSd1OqlJuui_d-oI7ly9xb3nPjgAXBN8SzBWd5ngSnCEKUZYkEoieQImRCiGeEU_TsEEa6EQF5Seg4ucNxhjyVk1AQ_L1sHk8i722cHoYRvWLVzZlIJL8K1uYymfB9iE2LgMS4TdkBcYum6_Db0tIfaX4MzbLrur3zsF70-Py9kzWrzOX2b3C1QzogtSUlllV42gnBEqPZfKO8-Er2upHeErZXHjNGOcK6KYppZpoptGe8FprT2bgptxd5fi197lYjZxn_rhpaFcs6riw-zQomOrTjHn5LzZpbC16WAINkdXZnRlBlfmx5U5QmyE8lDu1y79Tf9DfQPtD2u9</recordid><startdate>20210201</startdate><enddate>20210201</enddate><creator>Lapa, Havva Elif</creator><creator>Kökce, Ali</creator><creator>Aldemir, Durmuş Ali</creator><creator>Özdemir, Ahmet Faruk</creator><general>Springer US</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>F28</scope><scope>FR3</scope><scope>HCIFZ</scope><scope>JG9</scope><scope>KB.</scope><scope>L7M</scope><scope>P5Z</scope><scope>P62</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>S0W</scope><orcidid>https://orcid.org/0000-0002-5706-4641</orcidid></search><sort><creationdate>20210201</creationdate><title>The response of high barrier Schottky diodes to light illumination</title><author>Lapa, Havva Elif ; Kökce, Ali ; Aldemir, Durmuş Ali ; Özdemir, Ahmet Faruk</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c319t-767a7abd5243126f467fef35fcc69e14b7a0de93344717392a3919dd9f542c9f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><topic>Bias</topic><topic>Capacitance</topic><topic>Characterization and Evaluation of Materials</topic><topic>Chemistry and Materials Science</topic><topic>Circuits</topic><topic>Diodes</topic><topic>Illumination</topic><topic>Light</topic><topic>Materials Science</topic><topic>Mathematical analysis</topic><topic>Open circuit voltage</topic><topic>Optical and Electronic Materials</topic><topic>Parameters</topic><topic>Photodiodes</topic><topic>Photovoltaic cells</topic><topic>Resistance</topic><topic>Schottky diodes</topic><topic>Short circuit currents</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lapa, Havva Elif</creatorcontrib><creatorcontrib>Kökce, Ali</creatorcontrib><creatorcontrib>Aldemir, Durmuş Ali</creatorcontrib><creatorcontrib>Özdemir, Ahmet Faruk</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central UK/Ireland</collection><collection>Advanced Technologies & Aerospace Collection</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>SciTech Premium Collection</collection><collection>Materials Research Database</collection><collection>Materials Science Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Advanced Technologies & Aerospace Database</collection><collection>ProQuest Advanced Technologies & Aerospace Collection</collection><collection>Materials Science Collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>DELNET Engineering & Technology Collection</collection><jtitle>Journal of materials science. Materials in electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Lapa, Havva Elif</au><au>Kökce, Ali</au><au>Aldemir, Durmuş Ali</au><au>Özdemir, Ahmet Faruk</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>The response of high barrier Schottky diodes to light illumination</atitle><jtitle>Journal of materials science. Materials in electronics</jtitle><stitle>J Mater Sci: Mater Electron</stitle><date>2021-02-01</date><risdate>2021</risdate><volume>32</volume><issue>4</issue><spage>4448</spage><epage>4456</epage><pages>4448-4456</pages><issn>0957-4522</issn><eissn>1573-482X</eissn><abstract>We have investigated the illumination effect on electrical characteristics of nearly ideal Yb/
p
-Si Schottky diodes with a high zero-bias barrier height (
Φ
bo
). The value of reverse bias current increased as the illumination level increased for these diodes. The electrical parameters such as ideality factor (
n
) and
Φ
bo
were obtained as 1.09 and 0.80 eV in dark, respectively.
n
increases with increasing illumination level whereas
Φ
bo
decreases. The series resistance calculated using Cheung functions almost did not change with the illumination level. The characteristics of capacitance–voltage and conductance-voltage were obtained as a function of illumination level, applied bias voltage and frequency. The effect of illumination on the capacitance–voltage and conductance-voltage characteristics was clearly observed for 10 kHz frequency whereas the illumination did not affect the characteristics for 1 MHz frequency, significantly. The photovoltaic parameters such as open circuit voltage of 0.21 V, short circuit current of 1.60 × 10
–5
A, and fill factor of 62% were obtained for 1040 W/m
2
. These values have changed with increasing illumination level. The effect of illumination on the density of the interfacial states was observed. The experimental findings have showed that the diodes are sensitive to illumination and have photovoltaic behavior. The Yb/
p
-Si Schottky diodes are promising for photodiode applications.</abstract><cop>New York</cop><pub>Springer US</pub><doi>10.1007/s10854-020-05186-6</doi><tpages>9</tpages><orcidid>https://orcid.org/0000-0002-5706-4641</orcidid></addata></record> |
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| subjects | Bias Capacitance Characterization and Evaluation of Materials Chemistry and Materials Science Circuits Diodes Illumination Light Materials Science Mathematical analysis Open circuit voltage Optical and Electronic Materials Parameters Photodiodes Photovoltaic cells Resistance Schottky diodes Short circuit currents |
| title | The response of high barrier Schottky diodes to light illumination |
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