Unidirectional growth, optical and dielectrical behavior of Nicotinium p-Toluenesulfonate crystal for optoelectronic applications

Typical PXRD pattern and their peak positions clearly evidences that the grown crystals are NPT with strong (001) orientation. The corresponding (001) plane intensity is increased significantly for NPT crystal grown by UGCT when compare with NPT crystal grown by SEGT. Noticeably, the peak intensitie...

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Veröffentlicht in:	Materials letters 2021-02, Vol.285, p.129189, Article 129189
Hauptverfasser:	Thayanithi, V., Praveen Kumar, P.
Format:	Artikel
Sprache:	eng
Schlagworte:	Crystal growth Crystals Dielectric loss Dielectric properties Emission analysis LDT Materials science Optical properties Optoelectronics Photoluminescence Second harmonic generation SHG Surface stability
Online-Zugang:	Volltext
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