Optical and resistive switching properties of Chitosan-aluminum-doped zinc oxide composite thin films for transparent resistive random access memory application
The preparation of chitosan-aluminum-doped zinc oxide (AZO) composite thin films for transparent resistive random access memory applications is reported. The variation in optical transmission, refractive index and optical bandgap of the composite films as a function of concentration of Al in ZnO and...
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| Veröffentlicht in: | Journal of materials science. Materials in electronics 2021-02, Vol.32 (3), p.3556-3565 |
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| container_title | Journal of materials science. Materials in electronics |
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| creator | Vallabhapurapu, Sreedevi Sangani, L. D. Varma Krishna, M. Ghanashyam Das, J. Srinivasan, A. Srinivasu, V. V. |
| description | The preparation of chitosan-aluminum-doped zinc oxide (AZO) composite thin films for transparent resistive random access memory applications is reported. The variation in optical transmission, refractive index and optical bandgap of the composite films as a function of concentration of Al in ZnO and AZO weight percent in chitosan is investigated. Independent of composition, optical transmission is of the order of 87–89% at 550 nm. The refractive index at this wavelength is in the range of 1.71–1.86. The composite films exhibit reversible resistive switching behavior which is dependent on the Al concentration in ZnO as well as the weight percent of AZO in chitosan. There is a threshold Al concentration in ZnO, below and above which resistive switching is not observed. At the threshold concentration, resistive switching behavior is stable over several cycles. The co-existence of unipolar and bipolar switching controlled by Al concentration in ZnO is also observed. The current study establishes the potential of chitosan-AZO composite thin films for transparent resistive random access memory application. |
| doi_str_mv | 10.1007/s10854-020-05102-y |
| format | Article |
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There is a threshold Al concentration in ZnO, below and above which resistive switching is not observed. At the threshold concentration, resistive switching behavior is stable over several cycles. The co-existence of unipolar and bipolar switching controlled by Al concentration in ZnO is also observed. The current study establishes the potential of chitosan-AZO composite thin films for transparent resistive random access memory application.</description><identifier>ISSN: 0957-4522</identifier><identifier>EISSN: 1573-482X</identifier><identifier>DOI: 10.1007/s10854-020-05102-y</identifier><language>eng</language><publisher>New York: Springer US</publisher><subject>Aluminum ; Characterization and Evaluation of Materials ; Chemistry and Materials Science ; Chitosan ; Materials Science ; Optical and Electronic Materials ; Optical properties ; Random access memory ; Refractivity ; Switching ; Thin films ; Weight ; Zinc oxide ; Zinc oxides</subject><ispartof>Journal of materials science. 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The refractive index at this wavelength is in the range of 1.71–1.86. The composite films exhibit reversible resistive switching behavior which is dependent on the Al concentration in ZnO as well as the weight percent of AZO in chitosan. There is a threshold Al concentration in ZnO, below and above which resistive switching is not observed. At the threshold concentration, resistive switching behavior is stable over several cycles. The co-existence of unipolar and bipolar switching controlled by Al concentration in ZnO is also observed. The current study establishes the potential of chitosan-AZO composite thin films for transparent resistive random access memory application.</description><subject>Aluminum</subject><subject>Characterization and Evaluation of Materials</subject><subject>Chemistry and Materials Science</subject><subject>Chitosan</subject><subject>Materials Science</subject><subject>Optical and Electronic Materials</subject><subject>Optical properties</subject><subject>Random access memory</subject><subject>Refractivity</subject><subject>Switching</subject><subject>Thin films</subject><subject>Weight</subject><subject>Zinc oxide</subject><subject>Zinc oxides</subject><issn>0957-4522</issn><issn>1573-482X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><sourceid>AFKRA</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><recordid>eNp9UU1LHTEUDaVCX61_oKtA16n5mslkWR5tFQQ3Ct2FzCTRyEwyzc3TPn-NP7XRJ7QrVxfuPR_3cBD6zOhXRqk6BUaHThLKKaEdo5zs36EN65QgcuC_3qMN1Z0isuP8A_oIcEcp7aUYNujpcq1xsjO2yeHiIUKN9x7DQ6zTbUw3eC159aVGDzgHvL2NNYNNxM67JabdQlw7O_wY04Tzn-g8nvKyZojV49oEcIjzAjjkgmuxCVZbfKr_ObWlywu20-QB8OKXXPbYruvcvqoxp0_oKNgZ_MnrPEbXP75fbc_IxeXP8-23CzIJpivRVIVRKGnHUdnB0WHstRzdqPuOaSYHJ7VrmQNXsg9WUDcK0XHG_MADZbITx-jLQbcF_r3zUM1d3pXULA2Xmis9qL5vKH5ATSUDFB_MWuJiy94wap6bMIcmTGvCvDRh9o0kDiRo4HTjyz_pN1h_AdIDkNs</recordid><startdate>20210201</startdate><enddate>20210201</enddate><creator>Vallabhapurapu, Sreedevi</creator><creator>Sangani, L. 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Materials in electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Vallabhapurapu, Sreedevi</au><au>Sangani, L. D. Varma</au><au>Krishna, M. Ghanashyam</au><au>Das, J.</au><au>Srinivasan, A.</au><au>Srinivasu, V. V.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Optical and resistive switching properties of Chitosan-aluminum-doped zinc oxide composite thin films for transparent resistive random access memory application</atitle><jtitle>Journal of materials science. Materials in electronics</jtitle><stitle>J Mater Sci: Mater Electron</stitle><date>2021-02-01</date><risdate>2021</risdate><volume>32</volume><issue>3</issue><spage>3556</spage><epage>3565</epage><pages>3556-3565</pages><issn>0957-4522</issn><eissn>1573-482X</eissn><abstract>The preparation of chitosan-aluminum-doped zinc oxide (AZO) composite thin films for transparent resistive random access memory applications is reported. The variation in optical transmission, refractive index and optical bandgap of the composite films as a function of concentration of Al in ZnO and AZO weight percent in chitosan is investigated. Independent of composition, optical transmission is of the order of 87–89% at 550 nm. The refractive index at this wavelength is in the range of 1.71–1.86. The composite films exhibit reversible resistive switching behavior which is dependent on the Al concentration in ZnO as well as the weight percent of AZO in chitosan. 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| subjects | Aluminum Characterization and Evaluation of Materials Chemistry and Materials Science Chitosan Materials Science Optical and Electronic Materials Optical properties Random access memory Refractivity Switching Thin films Weight Zinc oxide Zinc oxides |
| title | Optical and resistive switching properties of Chitosan-aluminum-doped zinc oxide composite thin films for transparent resistive random access memory application |
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