Atomic-level charge transport mechanism in gate-tunable anti-ambipolar van der Waals heterojunctions

van der Waals p–n heterojunctions using both 2D–2D and mixed-dimensional systems have shown anti-ambipolar behavior. Gate tunability in anti-ambipolar characteristics is obtained in special heterojunction geometries, such as self-aligned black phosphorus/MoS2 p–n heterojunctions. Although the device...

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