Atomic layer deposited Mo2N thin films using Mo(CO)6 and NH3 plasma as a Cu diffusion barrier

Thin films of molybdenum nitride (Mo2N) are prepared using sequential exposure of molybdenum hexacarbonyl [Mo(CO)6] and NH3 plasma in a plasma-enhanced atomic layer deposition (PEALD) reactor. Several process parameters such as the deposition temperature, plasma power, and post-annealing conditions...

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