Inhomogeneous work-function hysteresis in chemical vapor deposition-grown graphene field-effect devices

The work function of graphene is known to be tuned by gate voltage on SiO2 substrates. For a graphene field-effect transistor (FET), chemical species such as oxygen and water molecules induce electrostatic interactions between the graphene and SiO2 substrate, and consequently, the conductance of gra...

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Veröffentlicht in:	Carbon (New York) 2021-03, Vol.173, p.594-599
Hauptverfasser:	Woo, Hwi Je, Kim, Seongchan, Choi, Young-Jin, Cho, Jeong Ho, Kim, Seong Heon, Song, Young Jae
Format:	Artikel
Sprache:	eng
Schlagworte:	Carbon Chemical vapor deposition Current voltage characteristics Electron transport Field effect transistors Graphene Graphite Hysteresis Inhomogeneity Kelvin probe force microscopy Performance degradation Resistance Semiconductor devices Silicon dioxide Studies Substrates Transistors Water chemistry Work functions Work-function
Online-Zugang:	Volltext
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