Enhancing room-temperature thermoelectric performance of n-type Bi2Te3-based alloys via sulfur alloying
Bismuth-telluride-based alloys are the best thermoelectric materials used in commercial solid-state refrigeration near room temperature. Nevertheless, for n-type polycrystalline alloys, their thermoelectric figure of merit ( zT ) values at room temperature are often less than 1.0, due to the high el...
Gespeichert in:
| Veröffentlicht in: | Rare metals 2021-03, Vol.40 (3), p.513-520 |
|---|---|
| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 520 |
|---|---|
| container_issue | 3 |
| container_start_page | 513 |
| container_title | Rare metals |
| container_volume | 40 |
| creator | Liu, Feng Wu, Ye-Hao Zhang, Qi Zhu, Tie-Jun Zhao, Xin-Bing |
| description | Bismuth-telluride-based alloys are the best thermoelectric materials used in commercial solid-state refrigeration near room temperature. Nevertheless, for n-type polycrystalline alloys, their thermoelectric figure of merit (
zT
) values at room temperature are often less than 1.0, due to the high electron concentration originating from the donor-like effect induced by the mechanical deformation process. Herein, carrier concentration for better performance near room temperature was optimized through manipulating intrinsic point defects by sulfur alloying. Sulfur alloying significantly decreases antisite defects concentration and suppresses donor-like effect, resulting in optimized carrier concentration and reduced electronic thermal conductivity. The hot deformation process was also applied to improve carrier mobility due to the enhanced texture. As a result, a high
zT
value of 1 at 300 K and peak
zT
value of 1.1 at 350 K were obtained for the twice hot-deformed Bi
2
Te
2.7
Se
0.21
S
0.09
sample, which verifies sulfur alloying is an effective method to improve thermoelectric performance of n-type polycrystalline Bi
2
Te
3
-based alloys near room temperature. |
| doi_str_mv | 10.1007/s12598-020-01615-x |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2491607670</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2491607670</sourcerecordid><originalsourceid>FETCH-LOGICAL-c319t-abb7b5ab737b9a0f3e2ed834e9b0a9bfd7768d36526aab975920cf33cbd6d90d3</originalsourceid><addsrcrecordid>eNp9kMtOwzAQRSMEEuXxA6wssTaM7caOl1CVh1SJTVlbdjJpUyVxsRPU_j2GILFjNaPRuXekk2U3DO4YgLqPjOe6oMCBApMsp4eTbMYKqahiRX6adgBGIefsPLuIcQcwn0sJs2yz7Le2L5t-Q4L3HR2w22OwwxiQDFsMnccWyyE0JUn32ocu0Uh8TXo6HPdIHhu-RkGdjVgR27b-GMlnY0kc23oM0yW1X2VntW0jXv_Oy-z9ablevNDV2_Pr4mFFS8H0QK1zyuXWKaGctlAL5FgVYo7agdWurpSSRSVkzqW1TqtccyhrIUpXyUpDJS6z26l3H_zHiHEwOz-GPr00fK6ZBCUVJIpPVBl8jAFrsw9NZ8PRMDDfQs0k1CSh5keoOaSQmEIxwf0Gw1_1P6kvL-t7hQ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2491607670</pqid></control><display><type>article</type><title>Enhancing room-temperature thermoelectric performance of n-type Bi2Te3-based alloys via sulfur alloying</title><source>Alma/SFX Local Collection</source><source>SpringerLink Journals - AutoHoldings</source><creator>Liu, Feng ; Wu, Ye-Hao ; Zhang, Qi ; Zhu, Tie-Jun ; Zhao, Xin-Bing</creator><creatorcontrib>Liu, Feng ; Wu, Ye-Hao ; Zhang, Qi ; Zhu, Tie-Jun ; Zhao, Xin-Bing</creatorcontrib><description>Bismuth-telluride-based alloys are the best thermoelectric materials used in commercial solid-state refrigeration near room temperature. Nevertheless, for n-type polycrystalline alloys, their thermoelectric figure of merit (
zT
) values at room temperature are often less than 1.0, due to the high electron concentration originating from the donor-like effect induced by the mechanical deformation process. Herein, carrier concentration for better performance near room temperature was optimized through manipulating intrinsic point defects by sulfur alloying. Sulfur alloying significantly decreases antisite defects concentration and suppresses donor-like effect, resulting in optimized carrier concentration and reduced electronic thermal conductivity. The hot deformation process was also applied to improve carrier mobility due to the enhanced texture. As a result, a high
zT
value of 1 at 300 K and peak
zT
value of 1.1 at 350 K were obtained for the twice hot-deformed Bi
2
Te
2.7
Se
0.21
S
0.09
sample, which verifies sulfur alloying is an effective method to improve thermoelectric performance of n-type polycrystalline Bi
2
Te
3
-based alloys near room temperature.</description><identifier>ISSN: 1001-0521</identifier><identifier>EISSN: 1867-7185</identifier><identifier>DOI: 10.1007/s12598-020-01615-x</identifier><language>eng</language><publisher>Beijing: Nonferrous Metals Society of China</publisher><subject>Alloying effects ; Antisite defects ; Biomaterials ; Bismuth tellurides ; Carrier density ; Carrier mobility ; Chemistry and Materials Science ; Deformation effects ; Energy ; Figure of merit ; Materials Engineering ; Materials Science ; Metallic Materials ; Nanoscale Science and Technology ; Original Article ; Physical Chemistry ; Point defects ; Polycrystals ; Room temperature ; Sulfur ; Thermal conductivity ; Thermoelectric materials</subject><ispartof>Rare metals, 2021-03, Vol.40 (3), p.513-520</ispartof><rights>GRINM Bohan (Beijing) Publishing Co., Ltd 2020</rights><rights>GRINM Bohan (Beijing) Publishing Co., Ltd 2020.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c319t-abb7b5ab737b9a0f3e2ed834e9b0a9bfd7768d36526aab975920cf33cbd6d90d3</citedby><cites>FETCH-LOGICAL-c319t-abb7b5ab737b9a0f3e2ed834e9b0a9bfd7768d36526aab975920cf33cbd6d90d3</cites><orcidid>0000-0002-3868-0633 ; 0000-0001-6096-9284</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s12598-020-01615-x$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s12598-020-01615-x$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,776,780,27901,27902,41464,42533,51294</link.rule.ids></links><search><creatorcontrib>Liu, Feng</creatorcontrib><creatorcontrib>Wu, Ye-Hao</creatorcontrib><creatorcontrib>Zhang, Qi</creatorcontrib><creatorcontrib>Zhu, Tie-Jun</creatorcontrib><creatorcontrib>Zhao, Xin-Bing</creatorcontrib><title>Enhancing room-temperature thermoelectric performance of n-type Bi2Te3-based alloys via sulfur alloying</title><title>Rare metals</title><addtitle>Rare Met</addtitle><description>Bismuth-telluride-based alloys are the best thermoelectric materials used in commercial solid-state refrigeration near room temperature. Nevertheless, for n-type polycrystalline alloys, their thermoelectric figure of merit (
zT
) values at room temperature are often less than 1.0, due to the high electron concentration originating from the donor-like effect induced by the mechanical deformation process. Herein, carrier concentration for better performance near room temperature was optimized through manipulating intrinsic point defects by sulfur alloying. Sulfur alloying significantly decreases antisite defects concentration and suppresses donor-like effect, resulting in optimized carrier concentration and reduced electronic thermal conductivity. The hot deformation process was also applied to improve carrier mobility due to the enhanced texture. As a result, a high
zT
value of 1 at 300 K and peak
zT
value of 1.1 at 350 K were obtained for the twice hot-deformed Bi
2
Te
2.7
Se
0.21
S
0.09
sample, which verifies sulfur alloying is an effective method to improve thermoelectric performance of n-type polycrystalline Bi
2
Te
3
-based alloys near room temperature.</description><subject>Alloying effects</subject><subject>Antisite defects</subject><subject>Biomaterials</subject><subject>Bismuth tellurides</subject><subject>Carrier density</subject><subject>Carrier mobility</subject><subject>Chemistry and Materials Science</subject><subject>Deformation effects</subject><subject>Energy</subject><subject>Figure of merit</subject><subject>Materials Engineering</subject><subject>Materials Science</subject><subject>Metallic Materials</subject><subject>Nanoscale Science and Technology</subject><subject>Original Article</subject><subject>Physical Chemistry</subject><subject>Point defects</subject><subject>Polycrystals</subject><subject>Room temperature</subject><subject>Sulfur</subject><subject>Thermal conductivity</subject><subject>Thermoelectric materials</subject><issn>1001-0521</issn><issn>1867-7185</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><recordid>eNp9kMtOwzAQRSMEEuXxA6wssTaM7caOl1CVh1SJTVlbdjJpUyVxsRPU_j2GILFjNaPRuXekk2U3DO4YgLqPjOe6oMCBApMsp4eTbMYKqahiRX6adgBGIefsPLuIcQcwn0sJs2yz7Le2L5t-Q4L3HR2w22OwwxiQDFsMnccWyyE0JUn32ocu0Uh8TXo6HPdIHhu-RkGdjVgR27b-GMlnY0kc23oM0yW1X2VntW0jXv_Oy-z9ablevNDV2_Pr4mFFS8H0QK1zyuXWKaGctlAL5FgVYo7agdWurpSSRSVkzqW1TqtccyhrIUpXyUpDJS6z26l3H_zHiHEwOz-GPr00fK6ZBCUVJIpPVBl8jAFrsw9NZ8PRMDDfQs0k1CSh5keoOaSQmEIxwf0Gw1_1P6kvL-t7hQ</recordid><startdate>20210301</startdate><enddate>20210301</enddate><creator>Liu, Feng</creator><creator>Wu, Ye-Hao</creator><creator>Zhang, Qi</creator><creator>Zhu, Tie-Jun</creator><creator>Zhao, Xin-Bing</creator><general>Nonferrous Metals Society of China</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><orcidid>https://orcid.org/0000-0002-3868-0633</orcidid><orcidid>https://orcid.org/0000-0001-6096-9284</orcidid></search><sort><creationdate>20210301</creationdate><title>Enhancing room-temperature thermoelectric performance of n-type Bi2Te3-based alloys via sulfur alloying</title><author>Liu, Feng ; Wu, Ye-Hao ; Zhang, Qi ; Zhu, Tie-Jun ; Zhao, Xin-Bing</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c319t-abb7b5ab737b9a0f3e2ed834e9b0a9bfd7768d36526aab975920cf33cbd6d90d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><topic>Alloying effects</topic><topic>Antisite defects</topic><topic>Biomaterials</topic><topic>Bismuth tellurides</topic><topic>Carrier density</topic><topic>Carrier mobility</topic><topic>Chemistry and Materials Science</topic><topic>Deformation effects</topic><topic>Energy</topic><topic>Figure of merit</topic><topic>Materials Engineering</topic><topic>Materials Science</topic><topic>Metallic Materials</topic><topic>Nanoscale Science and Technology</topic><topic>Original Article</topic><topic>Physical Chemistry</topic><topic>Point defects</topic><topic>Polycrystals</topic><topic>Room temperature</topic><topic>Sulfur</topic><topic>Thermal conductivity</topic><topic>Thermoelectric materials</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Liu, Feng</creatorcontrib><creatorcontrib>Wu, Ye-Hao</creatorcontrib><creatorcontrib>Zhang, Qi</creatorcontrib><creatorcontrib>Zhu, Tie-Jun</creatorcontrib><creatorcontrib>Zhao, Xin-Bing</creatorcontrib><collection>CrossRef</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Rare metals</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Liu, Feng</au><au>Wu, Ye-Hao</au><au>Zhang, Qi</au><au>Zhu, Tie-Jun</au><au>Zhao, Xin-Bing</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Enhancing room-temperature thermoelectric performance of n-type Bi2Te3-based alloys via sulfur alloying</atitle><jtitle>Rare metals</jtitle><stitle>Rare Met</stitle><date>2021-03-01</date><risdate>2021</risdate><volume>40</volume><issue>3</issue><spage>513</spage><epage>520</epage><pages>513-520</pages><issn>1001-0521</issn><eissn>1867-7185</eissn><abstract>Bismuth-telluride-based alloys are the best thermoelectric materials used in commercial solid-state refrigeration near room temperature. Nevertheless, for n-type polycrystalline alloys, their thermoelectric figure of merit (
zT
) values at room temperature are often less than 1.0, due to the high electron concentration originating from the donor-like effect induced by the mechanical deformation process. Herein, carrier concentration for better performance near room temperature was optimized through manipulating intrinsic point defects by sulfur alloying. Sulfur alloying significantly decreases antisite defects concentration and suppresses donor-like effect, resulting in optimized carrier concentration and reduced electronic thermal conductivity. The hot deformation process was also applied to improve carrier mobility due to the enhanced texture. As a result, a high
zT
value of 1 at 300 K and peak
zT
value of 1.1 at 350 K were obtained for the twice hot-deformed Bi
2
Te
2.7
Se
0.21
S
0.09
sample, which verifies sulfur alloying is an effective method to improve thermoelectric performance of n-type polycrystalline Bi
2
Te
3
-based alloys near room temperature.</abstract><cop>Beijing</cop><pub>Nonferrous Metals Society of China</pub><doi>10.1007/s12598-020-01615-x</doi><tpages>8</tpages><orcidid>https://orcid.org/0000-0002-3868-0633</orcidid><orcidid>https://orcid.org/0000-0001-6096-9284</orcidid></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 1001-0521 |
| ispartof | Rare metals, 2021-03, Vol.40 (3), p.513-520 |
| issn | 1001-0521 1867-7185 |
| language | eng |
| recordid | cdi_proquest_journals_2491607670 |
| source | Alma/SFX Local Collection; SpringerLink Journals - AutoHoldings |
| subjects | Alloying effects Antisite defects Biomaterials Bismuth tellurides Carrier density Carrier mobility Chemistry and Materials Science Deformation effects Energy Figure of merit Materials Engineering Materials Science Metallic Materials Nanoscale Science and Technology Original Article Physical Chemistry Point defects Polycrystals Room temperature Sulfur Thermal conductivity Thermoelectric materials |
| title | Enhancing room-temperature thermoelectric performance of n-type Bi2Te3-based alloys via sulfur alloying |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-03T21%3A54%3A33IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Enhancing%20room-temperature%20thermoelectric%20performance%20of%20n-type%20Bi2Te3-based%20alloys%20via%20sulfur%20alloying&rft.jtitle=Rare%20metals&rft.au=Liu,%20Feng&rft.date=2021-03-01&rft.volume=40&rft.issue=3&rft.spage=513&rft.epage=520&rft.pages=513-520&rft.issn=1001-0521&rft.eissn=1867-7185&rft_id=info:doi/10.1007/s12598-020-01615-x&rft_dat=%3Cproquest_cross%3E2491607670%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2491607670&rft_id=info:pmid/&rfr_iscdi=true |