Formation of InAs/GaP Quantum-Well Heterostructures on Silicon Substrates by Molecular-Beam Epitaxy
The possibility of forming a strained pseudomorphous quantum well (QW) consisting of a In x Ga 1 – x As y P 1 – y quaternary alloy upon the deposition of InAs onto the surface of an epitaxial GaP/Si layer with a developed relief is demonstrated. The QW is studied by means of transmission electron...
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| Veröffentlicht in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2021-02, Vol.55 (2), p.194-201 |
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| creator | Abramkin, D. S. Petrushkov, M. O. Emelyanov, E. A. Nenashev, A. V. Yesin, M. Yu Vasev, A. V. Putyato, M. A. Bogomolov, D. B. Gutakovskiy, A. K. Preobrazhenskiy, V. V. |
| description | The possibility of forming a strained pseudomorphous quantum well (QW) consisting of a In
x
Ga
1 –
x
As
y
P
1 –
y
quaternary alloy upon the deposition of InAs onto the surface of an epitaxial GaP/Si layer with a developed relief is demonstrated. The QW is studied by means of transmission electron microscopy and steady-state photoluminescence spectroscopy. The formation of two QW segments different in width and composition of the In
x
Ga
1 –
x
As
y
P
1 –
y
alloy is observed; in this case, an increase in the QW width is accompanied by a decrease in the content of In and As atoms. The lateral dimensions of the QW segments are no smaller than 20 nm. The QW segments correspond to two different low-temperature photoluminescence bands. The experimentally observed phenomena are interpreted on the assumption of transformation of the surface under the action of elastic strains during heteroepitaxy of InAs on the terraced GaP surface. |
| doi_str_mv | 10.1134/S1063782621020020 |
| format | Article |
| fullrecord | <record><control><sourceid>gale_proqu</sourceid><recordid>TN_cdi_proquest_journals_2491607070</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><galeid>A652436825</galeid><sourcerecordid>A652436825</sourcerecordid><originalsourceid>FETCH-LOGICAL-c355t-4903fe0c4eb8d9cbfc88fc0e8058205c70c86159acaee50770b98c87ab1a805f3</originalsourceid><addsrcrecordid>eNp1kN9LwzAQx4soOKd_gG8Fn7td0qZNH-fYL5ioTPGxpNlldLTNTFJw_70pFXwQucCFu8_3cvkGwT2BCSFxMt0RSOOM05QSoODPRTAikEOUJll-2d_TOOr718GNtUcAQjhLRoFcatMIV-k21CrctDM7XYmX8LUTreua6APrOlyjQ6OtM510nUEbenhX1ZXsc1f6hnC-Wp7DJ12j7GphokcUTbg4VU58nW-DKyVqi3c_eRy8Lxdv83W0fV5t5rNtJGPGXJTkECsEmWDJ97ksleRcSUAOjFNgMgPJU8JyIQUigyyDMueSZ6IkwjMqHgcPw9yT0Z8dWlccdWda_2RBk5ykkPnw1GSgDqLGomqV9vtLH3ts-i-hqnx9ljKaxCmnzAvIIJDeBGtQFSdTNcKcCwJFb37xx3yvoYPGerY9oPld5X_RN7D4hd8</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2491607070</pqid></control><display><type>article</type><title>Formation of InAs/GaP Quantum-Well Heterostructures on Silicon Substrates by Molecular-Beam Epitaxy</title><source>SpringerNature Journals</source><creator>Abramkin, D. S. ; Petrushkov, M. O. ; Emelyanov, E. A. ; Nenashev, A. V. ; Yesin, M. Yu ; Vasev, A. V. ; Putyato, M. A. ; Bogomolov, D. B. ; Gutakovskiy, A. K. ; Preobrazhenskiy, V. V.</creator><creatorcontrib>Abramkin, D. S. ; Petrushkov, M. O. ; Emelyanov, E. A. ; Nenashev, A. V. ; Yesin, M. Yu ; Vasev, A. V. ; Putyato, M. A. ; Bogomolov, D. B. ; Gutakovskiy, A. K. ; Preobrazhenskiy, V. V.</creatorcontrib><description>The possibility of forming a strained pseudomorphous quantum well (QW) consisting of a In
x
Ga
1 –
x
As
y
P
1 –
y
quaternary alloy upon the deposition of InAs onto the surface of an epitaxial GaP/Si layer with a developed relief is demonstrated. The QW is studied by means of transmission electron microscopy and steady-state photoluminescence spectroscopy. The formation of two QW segments different in width and composition of the In
x
Ga
1 –
x
As
y
P
1 –
y
alloy is observed; in this case, an increase in the QW width is accompanied by a decrease in the content of In and As atoms. The lateral dimensions of the QW segments are no smaller than 20 nm. The QW segments correspond to two different low-temperature photoluminescence bands. The experimentally observed phenomena are interpreted on the assumption of transformation of the surface under the action of elastic strains during heteroepitaxy of InAs on the terraced GaP surface.</description><identifier>ISSN: 1063-7826</identifier><identifier>EISSN: 1090-6479</identifier><identifier>DOI: 10.1134/S1063782621020020</identifier><language>eng</language><publisher>Moscow: Pleiades Publishing</publisher><subject>Alloys ; Epitaxy ; Heterostructures ; Indium arsenides ; Low temperature ; Low-Dimensional Systems ; Magnetic Materials ; Magnetism ; Molecular beam epitaxy ; Photoluminescence ; Physics ; Physics and Astronomy ; Quantum Phenomena ; Quantum wells ; Quaternary alloys ; Segments ; Semiconductor Structures ; Silicon ; Silicon substrates</subject><ispartof>Semiconductors (Woodbury, N.Y.), 2021-02, Vol.55 (2), p.194-201</ispartof><rights>Pleiades Publishing, Ltd. 2021. ISSN 1063-7826, Semiconductors, 2021, Vol. 55, No. 2, pp. 194–201. © Pleiades Publishing, Ltd., 2021. Russian Text © The Author(s), 2021, published in Fizika i Tekhnika Poluprovodnikov, 2021, Vol. 55, No. 2, pp. 139–146.</rights><rights>COPYRIGHT 2021 Springer</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c355t-4903fe0c4eb8d9cbfc88fc0e8058205c70c86159acaee50770b98c87ab1a805f3</citedby><cites>FETCH-LOGICAL-c355t-4903fe0c4eb8d9cbfc88fc0e8058205c70c86159acaee50770b98c87ab1a805f3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1134/S1063782621020020$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1134/S1063782621020020$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,780,784,27924,27925,41488,42557,51319</link.rule.ids></links><search><creatorcontrib>Abramkin, D. S.</creatorcontrib><creatorcontrib>Petrushkov, M. O.</creatorcontrib><creatorcontrib>Emelyanov, E. A.</creatorcontrib><creatorcontrib>Nenashev, A. V.</creatorcontrib><creatorcontrib>Yesin, M. Yu</creatorcontrib><creatorcontrib>Vasev, A. V.</creatorcontrib><creatorcontrib>Putyato, M. A.</creatorcontrib><creatorcontrib>Bogomolov, D. B.</creatorcontrib><creatorcontrib>Gutakovskiy, A. K.</creatorcontrib><creatorcontrib>Preobrazhenskiy, V. V.</creatorcontrib><title>Formation of InAs/GaP Quantum-Well Heterostructures on Silicon Substrates by Molecular-Beam Epitaxy</title><title>Semiconductors (Woodbury, N.Y.)</title><addtitle>Semiconductors</addtitle><description>The possibility of forming a strained pseudomorphous quantum well (QW) consisting of a In
x
Ga
1 –
x
As
y
P
1 –
y
quaternary alloy upon the deposition of InAs onto the surface of an epitaxial GaP/Si layer with a developed relief is demonstrated. The QW is studied by means of transmission electron microscopy and steady-state photoluminescence spectroscopy. The formation of two QW segments different in width and composition of the In
x
Ga
1 –
x
As
y
P
1 –
y
alloy is observed; in this case, an increase in the QW width is accompanied by a decrease in the content of In and As atoms. The lateral dimensions of the QW segments are no smaller than 20 nm. The QW segments correspond to two different low-temperature photoluminescence bands. The experimentally observed phenomena are interpreted on the assumption of transformation of the surface under the action of elastic strains during heteroepitaxy of InAs on the terraced GaP surface.</description><subject>Alloys</subject><subject>Epitaxy</subject><subject>Heterostructures</subject><subject>Indium arsenides</subject><subject>Low temperature</subject><subject>Low-Dimensional Systems</subject><subject>Magnetic Materials</subject><subject>Magnetism</subject><subject>Molecular beam epitaxy</subject><subject>Photoluminescence</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Quantum Phenomena</subject><subject>Quantum wells</subject><subject>Quaternary alloys</subject><subject>Segments</subject><subject>Semiconductor Structures</subject><subject>Silicon</subject><subject>Silicon substrates</subject><issn>1063-7826</issn><issn>1090-6479</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><recordid>eNp1kN9LwzAQx4soOKd_gG8Fn7td0qZNH-fYL5ioTPGxpNlldLTNTFJw_70pFXwQucCFu8_3cvkGwT2BCSFxMt0RSOOM05QSoODPRTAikEOUJll-2d_TOOr718GNtUcAQjhLRoFcatMIV-k21CrctDM7XYmX8LUTreua6APrOlyjQ6OtM510nUEbenhX1ZXsc1f6hnC-Wp7DJ12j7GphokcUTbg4VU58nW-DKyVqi3c_eRy8Lxdv83W0fV5t5rNtJGPGXJTkECsEmWDJ97ksleRcSUAOjFNgMgPJU8JyIQUigyyDMueSZ6IkwjMqHgcPw9yT0Z8dWlccdWda_2RBk5ykkPnw1GSgDqLGomqV9vtLH3ts-i-hqnx9ljKaxCmnzAvIIJDeBGtQFSdTNcKcCwJFb37xx3yvoYPGerY9oPld5X_RN7D4hd8</recordid><startdate>20210201</startdate><enddate>20210201</enddate><creator>Abramkin, D. S.</creator><creator>Petrushkov, M. O.</creator><creator>Emelyanov, E. A.</creator><creator>Nenashev, A. V.</creator><creator>Yesin, M. Yu</creator><creator>Vasev, A. V.</creator><creator>Putyato, M. A.</creator><creator>Bogomolov, D. B.</creator><creator>Gutakovskiy, A. K.</creator><creator>Preobrazhenskiy, V. V.</creator><general>Pleiades Publishing</general><general>Springer</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20210201</creationdate><title>Formation of InAs/GaP Quantum-Well Heterostructures on Silicon Substrates by Molecular-Beam Epitaxy</title><author>Abramkin, D. S. ; Petrushkov, M. O. ; Emelyanov, E. A. ; Nenashev, A. V. ; Yesin, M. Yu ; Vasev, A. V. ; Putyato, M. A. ; Bogomolov, D. B. ; Gutakovskiy, A. K. ; Preobrazhenskiy, V. V.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c355t-4903fe0c4eb8d9cbfc88fc0e8058205c70c86159acaee50770b98c87ab1a805f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><topic>Alloys</topic><topic>Epitaxy</topic><topic>Heterostructures</topic><topic>Indium arsenides</topic><topic>Low temperature</topic><topic>Low-Dimensional Systems</topic><topic>Magnetic Materials</topic><topic>Magnetism</topic><topic>Molecular beam epitaxy</topic><topic>Photoluminescence</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Quantum Phenomena</topic><topic>Quantum wells</topic><topic>Quaternary alloys</topic><topic>Segments</topic><topic>Semiconductor Structures</topic><topic>Silicon</topic><topic>Silicon substrates</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Abramkin, D. S.</creatorcontrib><creatorcontrib>Petrushkov, M. O.</creatorcontrib><creatorcontrib>Emelyanov, E. A.</creatorcontrib><creatorcontrib>Nenashev, A. V.</creatorcontrib><creatorcontrib>Yesin, M. Yu</creatorcontrib><creatorcontrib>Vasev, A. V.</creatorcontrib><creatorcontrib>Putyato, M. A.</creatorcontrib><creatorcontrib>Bogomolov, D. B.</creatorcontrib><creatorcontrib>Gutakovskiy, A. K.</creatorcontrib><creatorcontrib>Preobrazhenskiy, V. V.</creatorcontrib><collection>CrossRef</collection><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Abramkin, D. S.</au><au>Petrushkov, M. O.</au><au>Emelyanov, E. A.</au><au>Nenashev, A. V.</au><au>Yesin, M. Yu</au><au>Vasev, A. V.</au><au>Putyato, M. A.</au><au>Bogomolov, D. B.</au><au>Gutakovskiy, A. K.</au><au>Preobrazhenskiy, V. V.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Formation of InAs/GaP Quantum-Well Heterostructures on Silicon Substrates by Molecular-Beam Epitaxy</atitle><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle><stitle>Semiconductors</stitle><date>2021-02-01</date><risdate>2021</risdate><volume>55</volume><issue>2</issue><spage>194</spage><epage>201</epage><pages>194-201</pages><issn>1063-7826</issn><eissn>1090-6479</eissn><abstract>The possibility of forming a strained pseudomorphous quantum well (QW) consisting of a In
x
Ga
1 –
x
As
y
P
1 –
y
quaternary alloy upon the deposition of InAs onto the surface of an epitaxial GaP/Si layer with a developed relief is demonstrated. The QW is studied by means of transmission electron microscopy and steady-state photoluminescence spectroscopy. The formation of two QW segments different in width and composition of the In
x
Ga
1 –
x
As
y
P
1 –
y
alloy is observed; in this case, an increase in the QW width is accompanied by a decrease in the content of In and As atoms. The lateral dimensions of the QW segments are no smaller than 20 nm. The QW segments correspond to two different low-temperature photoluminescence bands. The experimentally observed phenomena are interpreted on the assumption of transformation of the surface under the action of elastic strains during heteroepitaxy of InAs on the terraced GaP surface.</abstract><cop>Moscow</cop><pub>Pleiades Publishing</pub><doi>10.1134/S1063782621020020</doi><tpages>8</tpages></addata></record> |
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| identifier | ISSN: 1063-7826 |
| ispartof | Semiconductors (Woodbury, N.Y.), 2021-02, Vol.55 (2), p.194-201 |
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| source | SpringerNature Journals |
| subjects | Alloys Epitaxy Heterostructures Indium arsenides Low temperature Low-Dimensional Systems Magnetic Materials Magnetism Molecular beam epitaxy Photoluminescence Physics Physics and Astronomy Quantum Phenomena Quantum wells Quaternary alloys Segments Semiconductor Structures Silicon Silicon substrates |
| title | Formation of InAs/GaP Quantum-Well Heterostructures on Silicon Substrates by Molecular-Beam Epitaxy |
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