Bandwidth enhancement for GaN-based light-emitting diode by periodic Ag nanopillar arrays and diamond arrays
This paper designs a novel structure to increase the modulation bandwidth of GaN-based light-emitting diode. The structure mainly includes the periodic Ag nanopillar arrays and diamond arrays. The periodic Ag nanopillar arrays are used to induce surface plasmons, and surface plasmons can strongly co...
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| Veröffentlicht in: | Journal of materials science. Materials in electronics 2021, Vol.32 (2), p.2448-2458 |
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| container_title | Journal of materials science. Materials in electronics |
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| creator | Guo, Shiliang Li, Xin Xie, Ruijie Li, Zhiquan |
| description | This paper designs a novel structure to increase the modulation bandwidth of GaN-based light-emitting diode. The structure mainly includes the periodic Ag nanopillar arrays and diamond arrays. The periodic Ag nanopillar arrays are used to induce surface plasmons, and surface plasmons can strongly couple with quantum wells to increase the carrier concentration of light-emitting diodes, so as to increase the recombination opportunities between electrons and holes, thus reducing the carrier recombination lifetime. The diamond arrays are used to improve the heat dissipation performance of the device, so as to reduce the carrier recombination lifetime by increasing the injection current density of the light-emitting diode. The COMSOL software is used to simulate the designed structure, and the average electric field mode and temperature distribution are obtained. The high modulation bandwidth light-emitting diode provides an advantage for increasing the transmission rate of the visible light communication system. |
| doi_str_mv | 10.1007/s10854-020-05011-0 |
| format | Article |
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The structure mainly includes the periodic Ag nanopillar arrays and diamond arrays. The periodic Ag nanopillar arrays are used to induce surface plasmons, and surface plasmons can strongly couple with quantum wells to increase the carrier concentration of light-emitting diodes, so as to increase the recombination opportunities between electrons and holes, thus reducing the carrier recombination lifetime. The diamond arrays are used to improve the heat dissipation performance of the device, so as to reduce the carrier recombination lifetime by increasing the injection current density of the light-emitting diode. The COMSOL software is used to simulate the designed structure, and the average electric field mode and temperature distribution are obtained. The high modulation bandwidth light-emitting diode provides an advantage for increasing the transmission rate of the visible light communication system.</description><identifier>ISSN: 0957-4522</identifier><identifier>EISSN: 1573-482X</identifier><identifier>DOI: 10.1007/s10854-020-05011-0</identifier><language>eng</language><publisher>New York: Springer US</publisher><subject>Arrays ; Bandwidths ; Carrier density ; Carrier recombination ; Characterization and Evaluation of Materials ; Chemistry and Materials Science ; Communications systems ; Diamonds ; Electric fields ; Electron recombination ; Gallium nitrides ; Injection current ; Light emitting diodes ; Materials Science ; Modulation ; Optical and Electronic Materials ; Optical communication ; Plasmons ; Quantum wells ; Temperature distribution</subject><ispartof>Journal of materials science. Materials in electronics, 2021, Vol.32 (2), p.2448-2458</ispartof><rights>The Author(s), under exclusive licence to Springer Science+Business Media, LLC part of Springer Nature 2021</rights><rights>The Author(s), under exclusive licence to Springer Science+Business Media, LLC part of Springer Nature 2021.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c319t-3b051ccf0c4fb564724adf4f53e6afd40ae8aff8e2b38dea7cba73d9366e16e13</citedby><cites>FETCH-LOGICAL-c319t-3b051ccf0c4fb564724adf4f53e6afd40ae8aff8e2b38dea7cba73d9366e16e13</cites><orcidid>0000-0002-7909-6046</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s10854-020-05011-0$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s10854-020-05011-0$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,776,780,27901,27902,41464,42533,51294</link.rule.ids></links><search><creatorcontrib>Guo, Shiliang</creatorcontrib><creatorcontrib>Li, Xin</creatorcontrib><creatorcontrib>Xie, Ruijie</creatorcontrib><creatorcontrib>Li, Zhiquan</creatorcontrib><title>Bandwidth enhancement for GaN-based light-emitting diode by periodic Ag nanopillar arrays and diamond arrays</title><title>Journal of materials science. Materials in electronics</title><addtitle>J Mater Sci: Mater Electron</addtitle><description>This paper designs a novel structure to increase the modulation bandwidth of GaN-based light-emitting diode. The structure mainly includes the periodic Ag nanopillar arrays and diamond arrays. The periodic Ag nanopillar arrays are used to induce surface plasmons, and surface plasmons can strongly couple with quantum wells to increase the carrier concentration of light-emitting diodes, so as to increase the recombination opportunities between electrons and holes, thus reducing the carrier recombination lifetime. The diamond arrays are used to improve the heat dissipation performance of the device, so as to reduce the carrier recombination lifetime by increasing the injection current density of the light-emitting diode. The COMSOL software is used to simulate the designed structure, and the average electric field mode and temperature distribution are obtained. The high modulation bandwidth light-emitting diode provides an advantage for increasing the transmission rate of the visible light communication system.</description><subject>Arrays</subject><subject>Bandwidths</subject><subject>Carrier density</subject><subject>Carrier recombination</subject><subject>Characterization and Evaluation of Materials</subject><subject>Chemistry and Materials Science</subject><subject>Communications systems</subject><subject>Diamonds</subject><subject>Electric fields</subject><subject>Electron recombination</subject><subject>Gallium nitrides</subject><subject>Injection current</subject><subject>Light emitting diodes</subject><subject>Materials Science</subject><subject>Modulation</subject><subject>Optical and Electronic Materials</subject><subject>Optical communication</subject><subject>Plasmons</subject><subject>Quantum wells</subject><subject>Temperature distribution</subject><issn>0957-4522</issn><issn>1573-482X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><sourceid>BENPR</sourceid><recordid>eNp9kE9LxDAQxYMouK5-AU8Bz9FJk_47rouuguhFwVuYNkm3S5vWpIvstzdawZsw8Ibhvd_AI-SSwzUHyG8ChyKVDBJgkALnDI7Igqe5YLJI3o_JAso0ZzJNklNyFsIOADIpigXpbtHpz1ZPW2rcFl1teuMmagdPN_jMKgxG065tthMzfTtNrWuobgdtaHWgo_FxbWu6aqhDN4xt16Gn6D0eAo3gaMV-iDqfzsmJxS6Yi19dkrf7u9f1A3t62TyuV0-sFrycmKgg5XVtoZa2SjOZJxK1lTYVJkOrJaAp0NrCJJUotMG8rjAXuhRZZngcsSRXM3f0w8fehEnthr138aVKZMmlhEiNrmR21X4IwRurRt_26A-Kg_puVc2tqtiq-mlVQQyJORSi2TXG_6H_SX0BEbh8Sw</recordid><startdate>2021</startdate><enddate>2021</enddate><creator>Guo, Shiliang</creator><creator>Li, Xin</creator><creator>Xie, Ruijie</creator><creator>Li, Zhiquan</creator><general>Springer US</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>F28</scope><scope>FR3</scope><scope>HCIFZ</scope><scope>JG9</scope><scope>KB.</scope><scope>L7M</scope><scope>P5Z</scope><scope>P62</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>S0W</scope><orcidid>https://orcid.org/0000-0002-7909-6046</orcidid></search><sort><creationdate>2021</creationdate><title>Bandwidth enhancement for GaN-based light-emitting diode by periodic Ag nanopillar arrays and diamond arrays</title><author>Guo, Shiliang ; Li, Xin ; Xie, Ruijie ; Li, Zhiquan</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c319t-3b051ccf0c4fb564724adf4f53e6afd40ae8aff8e2b38dea7cba73d9366e16e13</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><topic>Arrays</topic><topic>Bandwidths</topic><topic>Carrier density</topic><topic>Carrier recombination</topic><topic>Characterization and Evaluation of Materials</topic><topic>Chemistry and Materials Science</topic><topic>Communications systems</topic><topic>Diamonds</topic><topic>Electric fields</topic><topic>Electron recombination</topic><topic>Gallium nitrides</topic><topic>Injection current</topic><topic>Light emitting diodes</topic><topic>Materials Science</topic><topic>Modulation</topic><topic>Optical and Electronic Materials</topic><topic>Optical communication</topic><topic>Plasmons</topic><topic>Quantum wells</topic><topic>Temperature distribution</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Guo, Shiliang</creatorcontrib><creatorcontrib>Li, Xin</creatorcontrib><creatorcontrib>Xie, Ruijie</creatorcontrib><creatorcontrib>Li, Zhiquan</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central UK/Ireland</collection><collection>Advanced Technologies & Aerospace Collection</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>SciTech Premium Collection</collection><collection>Materials Research Database</collection><collection>Materials Science Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Advanced Technologies & Aerospace Database</collection><collection>ProQuest Advanced Technologies & Aerospace Collection</collection><collection>Materials Science Collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>DELNET Engineering & Technology Collection</collection><jtitle>Journal of materials science. Materials in electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Guo, Shiliang</au><au>Li, Xin</au><au>Xie, Ruijie</au><au>Li, Zhiquan</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Bandwidth enhancement for GaN-based light-emitting diode by periodic Ag nanopillar arrays and diamond arrays</atitle><jtitle>Journal of materials science. Materials in electronics</jtitle><stitle>J Mater Sci: Mater Electron</stitle><date>2021</date><risdate>2021</risdate><volume>32</volume><issue>2</issue><spage>2448</spage><epage>2458</epage><pages>2448-2458</pages><issn>0957-4522</issn><eissn>1573-482X</eissn><abstract>This paper designs a novel structure to increase the modulation bandwidth of GaN-based light-emitting diode. The structure mainly includes the periodic Ag nanopillar arrays and diamond arrays. The periodic Ag nanopillar arrays are used to induce surface plasmons, and surface plasmons can strongly couple with quantum wells to increase the carrier concentration of light-emitting diodes, so as to increase the recombination opportunities between electrons and holes, thus reducing the carrier recombination lifetime. The diamond arrays are used to improve the heat dissipation performance of the device, so as to reduce the carrier recombination lifetime by increasing the injection current density of the light-emitting diode. The COMSOL software is used to simulate the designed structure, and the average electric field mode and temperature distribution are obtained. The high modulation bandwidth light-emitting diode provides an advantage for increasing the transmission rate of the visible light communication system.</abstract><cop>New York</cop><pub>Springer US</pub><doi>10.1007/s10854-020-05011-0</doi><tpages>11</tpages><orcidid>https://orcid.org/0000-0002-7909-6046</orcidid></addata></record> |
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| subjects | Arrays Bandwidths Carrier density Carrier recombination Characterization and Evaluation of Materials Chemistry and Materials Science Communications systems Diamonds Electric fields Electron recombination Gallium nitrides Injection current Light emitting diodes Materials Science Modulation Optical and Electronic Materials Optical communication Plasmons Quantum wells Temperature distribution |
| title | Bandwidth enhancement for GaN-based light-emitting diode by periodic Ag nanopillar arrays and diamond arrays |
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