The Role of Lengthscale in the Creep of Sn-3Ag-0.5Cu Solder Microstructures
Creep of directionally solidified Sn-3Ag-0.5Cu wt.% (SAC305) samples with near- orientation along the loading direction and different microstructural lengthscale is investigated under constant load tensile testing and at a range of temperatures. The creep performance improves by refining the micros...
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| Veröffentlicht in: | Journal of electronic materials 2021-03, Vol.50 (3), p.926-938 |
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| creator | Gu, Tianhong Gourlay, Christopher M. Britton, T. Ben |
| description | Creep of directionally solidified Sn-3Ag-0.5Cu wt.% (SAC305) samples with near- orientation along the loading direction and different microstructural lengthscale is investigated under constant load tensile testing and at a range of temperatures. The creep performance improves by refining the microstructure, i.e. the decrease in secondary dendrite arm spacing (
λ
2
), eutectic intermetallic spacing (
λ
e
) and intermetallic compound (IMC) size, indicating a longer creep lifetime, lower creep strain rate, change in activation energy (
Q
) and increase in ductility and homogeneity in macro- and micro-structural deformation of the samples. The dominating creep mechanism is obstacle-controlled dislocation creep at room temperature and transits to lattice-associated vacancy diffusion creep at elevated temperature (
T
T
M
> 0.7 to 0.75). The deformation mechanisms are investigated using electron backscatter diffraction and strain heterogeneity is identified between
β
-Sn in dendrites and
β
-Sn in eutectic regions containing Ag
3
Sn and Cu
6
Sn
5
particles. The size of the recrystallised grains is modulated by the dendritic and eutectic spacings; however, the recrystalised grains in the eutectic regions for coarse-scaled samples (largest
λ
2
and
λ
e
) is only localised next to IMCs without growth in size. |
| doi_str_mv | 10.1007/s11664-020-08697-4 |
| format | Article |
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λ
2
), eutectic intermetallic spacing (
λ
e
) and intermetallic compound (IMC) size, indicating a longer creep lifetime, lower creep strain rate, change in activation energy (
Q
) and increase in ductility and homogeneity in macro- and micro-structural deformation of the samples. The dominating creep mechanism is obstacle-controlled dislocation creep at room temperature and transits to lattice-associated vacancy diffusion creep at elevated temperature (
T
T
M
> 0.7 to 0.75). The deformation mechanisms are investigated using electron backscatter diffraction and strain heterogeneity is identified between
β
-Sn in dendrites and
β
-Sn in eutectic regions containing Ag
3
Sn and Cu
6
Sn
5
particles. The size of the recrystallised grains is modulated by the dendritic and eutectic spacings; however, the recrystalised grains in the eutectic regions for coarse-scaled samples (largest
λ
2
and
λ
e
) is only localised next to IMCs without growth in size.</description><identifier>ISSN: 0361-5235</identifier><identifier>EISSN: 1543-186X</identifier><identifier>DOI: 10.1007/s11664-020-08697-4</identifier><language>eng</language><publisher>New York: Springer US</publisher><subject>Characterization and Evaluation of Materials ; Chemistry and Materials Science ; Deformation mechanisms ; Dendritic structure ; Directional solidification ; Electron backscatter diffraction ; Electronics and Microelectronics ; Emerging Interconnection Technology ; Eutectics ; Grains ; Heterogeneity ; High temperature ; Homogeneity ; Instrumentation ; Interconnect ; Intermetallic compounds ; Lattice vacancies ; Materials Science ; Microstructure ; Optical and Electronic Materials ; Pb-free Solder ; Recrystallization ; Room temperature ; Solid State Physics ; Strain rate ; Tensile tests ; Tin base alloys ; TMS2020 Advanced Microelectronic Packaging ; TMS2020 Microelectronic Packaging</subject><ispartof>Journal of electronic materials, 2021-03, Vol.50 (3), p.926-938</ispartof><rights>The Author(s) 2021</rights><rights>The Author(s) 2021. This work is published under http://creativecommons.org/licenses/by/4.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c429t-1231366f0c604d29305caa850adfed59f3a71dfd75f610fffceda24bab9adabf3</citedby><cites>FETCH-LOGICAL-c429t-1231366f0c604d29305caa850adfed59f3a71dfd75f610fffceda24bab9adabf3</cites><orcidid>0000-0001-5343-9365 ; 0000-0002-4930-211X ; 0000-0002-4588-6007</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s11664-020-08697-4$$EPDF$$P50$$Gspringer$$Hfree_for_read</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s11664-020-08697-4$$EHTML$$P50$$Gspringer$$Hfree_for_read</linktohtml><link.rule.ids>314,780,784,27922,27923,41486,42555,51317</link.rule.ids></links><search><creatorcontrib>Gu, Tianhong</creatorcontrib><creatorcontrib>Gourlay, Christopher M.</creatorcontrib><creatorcontrib>Britton, T. Ben</creatorcontrib><title>The Role of Lengthscale in the Creep of Sn-3Ag-0.5Cu Solder Microstructures</title><title>Journal of electronic materials</title><addtitle>Journal of Elec Materi</addtitle><description>Creep of directionally solidified Sn-3Ag-0.5Cu wt.% (SAC305) samples with near- orientation along the loading direction and different microstructural lengthscale is investigated under constant load tensile testing and at a range of temperatures. The creep performance improves by refining the microstructure, i.e. the decrease in secondary dendrite arm spacing (
λ
2
), eutectic intermetallic spacing (
λ
e
) and intermetallic compound (IMC) size, indicating a longer creep lifetime, lower creep strain rate, change in activation energy (
Q
) and increase in ductility and homogeneity in macro- and micro-structural deformation of the samples. The dominating creep mechanism is obstacle-controlled dislocation creep at room temperature and transits to lattice-associated vacancy diffusion creep at elevated temperature (
T
T
M
> 0.7 to 0.75). The deformation mechanisms are investigated using electron backscatter diffraction and strain heterogeneity is identified between
β
-Sn in dendrites and
β
-Sn in eutectic regions containing Ag
3
Sn and Cu
6
Sn
5
particles. The size of the recrystallised grains is modulated by the dendritic and eutectic spacings; however, the recrystalised grains in the eutectic regions for coarse-scaled samples (largest
λ
2
and
λ
e
) is only localised next to IMCs without growth in size.</description><subject>Characterization and Evaluation of Materials</subject><subject>Chemistry and Materials Science</subject><subject>Deformation mechanisms</subject><subject>Dendritic structure</subject><subject>Directional solidification</subject><subject>Electron backscatter diffraction</subject><subject>Electronics and Microelectronics</subject><subject>Emerging Interconnection Technology</subject><subject>Eutectics</subject><subject>Grains</subject><subject>Heterogeneity</subject><subject>High temperature</subject><subject>Homogeneity</subject><subject>Instrumentation</subject><subject>Interconnect</subject><subject>Intermetallic compounds</subject><subject>Lattice vacancies</subject><subject>Materials Science</subject><subject>Microstructure</subject><subject>Optical and Electronic Materials</subject><subject>Pb-free Solder</subject><subject>Recrystallization</subject><subject>Room temperature</subject><subject>Solid State Physics</subject><subject>Strain rate</subject><subject>Tensile tests</subject><subject>Tin base alloys</subject><subject>TMS2020 Advanced Microelectronic Packaging</subject><subject>TMS2020 Microelectronic Packaging</subject><issn>0361-5235</issn><issn>1543-186X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><sourceid>C6C</sourceid><sourceid>8G5</sourceid><sourceid>ABUWG</sourceid><sourceid>AFKRA</sourceid><sourceid>AZQEC</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><sourceid>GNUQQ</sourceid><sourceid>GUQSH</sourceid><sourceid>M2O</sourceid><recordid>eNp9kEtLAzEQx4MoWKtfwNOC59SZvHb3WBa1YkWwFbyFdJP0Qd2tye7Bb2_qCt48DcP_McOPkGuECQLktxFRKUGBAYVClTkVJ2SEUnCKhXo_JSPgCqlkXJ6Tixh3ACixwBF5Wm5c9truXdb6bO6adbeJtUnrtsm6JFXBucNRWzSUT9cUJrLqs0W7ty5kz9s6tLELfd31wcVLcubNPrqr3zkmb_d3y2pG5y8Pj9V0TmvByo4i48iV8lArEJaVHGRtTCHBWO-sLD03OVpvc-kVgve-dtYwsTKr0liz8nxMbobeQ2g_exc7vWv70KSTmokSBDApeXKxwXX8MQbn9SFsP0z40gj6CE0P0HSCpn-gaZFCfAjFZG7WLvxV_5P6Bgk8bpk</recordid><startdate>20210301</startdate><enddate>20210301</enddate><creator>Gu, Tianhong</creator><creator>Gourlay, Christopher M.</creator><creator>Britton, T. Ben</creator><general>Springer US</general><general>Springer Nature B.V</general><scope>C6C</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>3V.</scope><scope>7XB</scope><scope>88I</scope><scope>8AF</scope><scope>8AO</scope><scope>8FE</scope><scope>8FG</scope><scope>8FK</scope><scope>8G5</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>GNUQQ</scope><scope>GUQSH</scope><scope>HCIFZ</scope><scope>KB.</scope><scope>L6V</scope><scope>M2O</scope><scope>M2P</scope><scope>M7S</scope><scope>MBDVC</scope><scope>P5Z</scope><scope>P62</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PTHSS</scope><scope>Q9U</scope><scope>S0X</scope><orcidid>https://orcid.org/0000-0001-5343-9365</orcidid><orcidid>https://orcid.org/0000-0002-4930-211X</orcidid><orcidid>https://orcid.org/0000-0002-4588-6007</orcidid></search><sort><creationdate>20210301</creationdate><title>The Role of Lengthscale in the Creep of Sn-3Ag-0.5Cu Solder Microstructures</title><author>Gu, Tianhong ; Gourlay, Christopher M. ; Britton, T. Ben</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c429t-1231366f0c604d29305caa850adfed59f3a71dfd75f610fffceda24bab9adabf3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><topic>Characterization and Evaluation of Materials</topic><topic>Chemistry and Materials Science</topic><topic>Deformation mechanisms</topic><topic>Dendritic structure</topic><topic>Directional solidification</topic><topic>Electron backscatter diffraction</topic><topic>Electronics and Microelectronics</topic><topic>Emerging Interconnection Technology</topic><topic>Eutectics</topic><topic>Grains</topic><topic>Heterogeneity</topic><topic>High temperature</topic><topic>Homogeneity</topic><topic>Instrumentation</topic><topic>Interconnect</topic><topic>Intermetallic compounds</topic><topic>Lattice vacancies</topic><topic>Materials Science</topic><topic>Microstructure</topic><topic>Optical and Electronic Materials</topic><topic>Pb-free Solder</topic><topic>Recrystallization</topic><topic>Room temperature</topic><topic>Solid State Physics</topic><topic>Strain rate</topic><topic>Tensile tests</topic><topic>Tin base alloys</topic><topic>TMS2020 Advanced Microelectronic Packaging</topic><topic>TMS2020 Microelectronic Packaging</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Gu, Tianhong</creatorcontrib><creatorcontrib>Gourlay, Christopher M.</creatorcontrib><creatorcontrib>Britton, T. 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Ben</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>The Role of Lengthscale in the Creep of Sn-3Ag-0.5Cu Solder Microstructures</atitle><jtitle>Journal of electronic materials</jtitle><stitle>Journal of Elec Materi</stitle><date>2021-03-01</date><risdate>2021</risdate><volume>50</volume><issue>3</issue><spage>926</spage><epage>938</epage><pages>926-938</pages><issn>0361-5235</issn><eissn>1543-186X</eissn><abstract>Creep of directionally solidified Sn-3Ag-0.5Cu wt.% (SAC305) samples with near- orientation along the loading direction and different microstructural lengthscale is investigated under constant load tensile testing and at a range of temperatures. The creep performance improves by refining the microstructure, i.e. the decrease in secondary dendrite arm spacing (
λ
2
), eutectic intermetallic spacing (
λ
e
) and intermetallic compound (IMC) size, indicating a longer creep lifetime, lower creep strain rate, change in activation energy (
Q
) and increase in ductility and homogeneity in macro- and micro-structural deformation of the samples. The dominating creep mechanism is obstacle-controlled dislocation creep at room temperature and transits to lattice-associated vacancy diffusion creep at elevated temperature (
T
T
M
> 0.7 to 0.75). The deformation mechanisms are investigated using electron backscatter diffraction and strain heterogeneity is identified between
β
-Sn in dendrites and
β
-Sn in eutectic regions containing Ag
3
Sn and Cu
6
Sn
5
particles. The size of the recrystallised grains is modulated by the dendritic and eutectic spacings; however, the recrystalised grains in the eutectic regions for coarse-scaled samples (largest
λ
2
and
λ
e
) is only localised next to IMCs without growth in size.</abstract><cop>New York</cop><pub>Springer US</pub><doi>10.1007/s11664-020-08697-4</doi><tpages>13</tpages><orcidid>https://orcid.org/0000-0001-5343-9365</orcidid><orcidid>https://orcid.org/0000-0002-4930-211X</orcidid><orcidid>https://orcid.org/0000-0002-4588-6007</orcidid><oa>free_for_read</oa></addata></record> |
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| source | SpringerLink Journals - AutoHoldings |
| subjects | Characterization and Evaluation of Materials Chemistry and Materials Science Deformation mechanisms Dendritic structure Directional solidification Electron backscatter diffraction Electronics and Microelectronics Emerging Interconnection Technology Eutectics Grains Heterogeneity High temperature Homogeneity Instrumentation Interconnect Intermetallic compounds Lattice vacancies Materials Science Microstructure Optical and Electronic Materials Pb-free Solder Recrystallization Room temperature Solid State Physics Strain rate Tensile tests Tin base alloys TMS2020 Advanced Microelectronic Packaging TMS2020 Microelectronic Packaging |
| title | The Role of Lengthscale in the Creep of Sn-3Ag-0.5Cu Solder Microstructures |
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