Gate Capacitance and Off-State Characteristics of E-Mode p-GaN Gate AlGaN/GaN High-Electron-Mobility Transistors After Gate Stress Bias
This study investigated the gate capacitance and off-state characteristics of 650-V enhancement-mode p-GaN gate AlGaN/GaN high-electron-mobility transistors after various degrees of gate stress bias. A significant change was observed in the on-state capacitance when the gate stress bias was greater...
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| Veröffentlicht in: | Journal of electronic materials 2021-03, Vol.50 (3), p.1162-1166 |
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| container_title | Journal of electronic materials |
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| creator | Lai, Yu-Chen Zhong, Yi-Nan Tsai, Ming-Yan Hsin, Yue-Ming |
| description | This study investigated the gate capacitance and off-state characteristics of 650-V enhancement-mode p-GaN gate AlGaN/GaN high-electron-mobility transistors after various degrees of gate stress bias. A significant change was observed in the on-state capacitance when the gate stress bias was greater than 6 V. The corresponding threshold voltage exhibited a positive shift at low gate stress and a negative shift when the gate stress was greater than 6 V, which agreed with the shift observation from the
I
–
V
measurement. Moreover, the off-state leakage current increased significantly after the gate stress exceeded 6 V during the off-state characterization although the devices could be biased up to 1000 V without breakdown. The increase in the off-state leakage current would lead to higher power loss. |
| doi_str_mv | 10.1007/s11664-020-08691-w |
| format | Article |
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I
–
V
measurement. Moreover, the off-state leakage current increased significantly after the gate stress exceeded 6 V during the off-state characterization although the devices could be biased up to 1000 V without breakdown. The increase in the off-state leakage current would lead to higher power loss.</description><identifier>ISSN: 0361-5235</identifier><identifier>EISSN: 1543-186X</identifier><identifier>DOI: 10.1007/s11664-020-08691-w</identifier><language>eng</language><publisher>New York: Springer US</publisher><subject>Aluminum gallium nitrides ; Bias ; Capacitance ; Characterization and Evaluation of Materials ; Chemistry and Materials Science ; Electronics and Microelectronics ; Gallium nitrides ; High electron mobility transistors ; Instrumentation ; Leakage current ; Materials Science ; Optical and Electronic Materials ; Original Research Article ; Semiconductor devices ; Solid State Physics ; Threshold voltage ; Transistors</subject><ispartof>Journal of electronic materials, 2021-03, Vol.50 (3), p.1162-1166</ispartof><rights>The Author(s) 2021</rights><rights>The Author(s) 2021. This work is published under http://creativecommons.org/licenses/by/4.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c363t-89237ee30c2fbe2efeb1b6271f1fedfdecb0c1add8936cdcdb71792ab68f84993</citedby><cites>FETCH-LOGICAL-c363t-89237ee30c2fbe2efeb1b6271f1fedfdecb0c1add8936cdcdb71792ab68f84993</cites><orcidid>0000-0001-6733-4433</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s11664-020-08691-w$$EPDF$$P50$$Gspringer$$Hfree_for_read</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s11664-020-08691-w$$EHTML$$P50$$Gspringer$$Hfree_for_read</linktohtml><link.rule.ids>314,780,784,27924,27925,41488,42557,51319</link.rule.ids></links><search><creatorcontrib>Lai, Yu-Chen</creatorcontrib><creatorcontrib>Zhong, Yi-Nan</creatorcontrib><creatorcontrib>Tsai, Ming-Yan</creatorcontrib><creatorcontrib>Hsin, Yue-Ming</creatorcontrib><title>Gate Capacitance and Off-State Characteristics of E-Mode p-GaN Gate AlGaN/GaN High-Electron-Mobility Transistors After Gate Stress Bias</title><title>Journal of electronic materials</title><addtitle>Journal of Elec Materi</addtitle><description>This study investigated the gate capacitance and off-state characteristics of 650-V enhancement-mode p-GaN gate AlGaN/GaN high-electron-mobility transistors after various degrees of gate stress bias. A significant change was observed in the on-state capacitance when the gate stress bias was greater than 6 V. The corresponding threshold voltage exhibited a positive shift at low gate stress and a negative shift when the gate stress was greater than 6 V, which agreed with the shift observation from the
I
–
V
measurement. Moreover, the off-state leakage current increased significantly after the gate stress exceeded 6 V during the off-state characterization although the devices could be biased up to 1000 V without breakdown. The increase in the off-state leakage current would lead to higher power loss.</description><subject>Aluminum gallium nitrides</subject><subject>Bias</subject><subject>Capacitance</subject><subject>Characterization and Evaluation of Materials</subject><subject>Chemistry and Materials Science</subject><subject>Electronics and Microelectronics</subject><subject>Gallium nitrides</subject><subject>High electron mobility transistors</subject><subject>Instrumentation</subject><subject>Leakage current</subject><subject>Materials Science</subject><subject>Optical and Electronic Materials</subject><subject>Original Research Article</subject><subject>Semiconductor devices</subject><subject>Solid State Physics</subject><subject>Threshold voltage</subject><subject>Transistors</subject><issn>0361-5235</issn><issn>1543-186X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><sourceid>C6C</sourceid><sourceid>8G5</sourceid><sourceid>ABUWG</sourceid><sourceid>AFKRA</sourceid><sourceid>AZQEC</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><sourceid>GNUQQ</sourceid><sourceid>GUQSH</sourceid><sourceid>M2O</sourceid><recordid>eNp9kMFKAzEQhoMoWKsv4CngOZpJdrO7x1pqK1Q9tIK3kM1OdKXu1iQiPoGvbdoVvHmaDPm_b-An5Bz4JXBeXAUApTLGBWe8VBWwzwMygjyTDEr1dEhGXCpguZD5MTkJ4ZVzyKGEEfmem4h0arbGttF0FqnpGvrgHFvF_c-L8cZG9G2IrQ20d3TG7voG6ZbNzT3d45NNel7t1kX7_MJmG7TR913K1e2mjV907U0XkqH3gU5csg3cKnoMgV63JpySI2c2Ac9-55g83szW0wVbPsxvp5Mls1LJyMpKyAJRcitcjQId1lArUYADh41r0NbcgmmaspLKNrapCygqYWpVujKrKjkmF4N36_v3DwxRv_YfvksntcgqnnFeVnlKiSFlfR-CR6e3vn0z_ksD17vC9VC4ToXrfeH6M0FygEIKd8_o_9T_UD-DyoUN</recordid><startdate>20210301</startdate><enddate>20210301</enddate><creator>Lai, Yu-Chen</creator><creator>Zhong, Yi-Nan</creator><creator>Tsai, Ming-Yan</creator><creator>Hsin, Yue-Ming</creator><general>Springer US</general><general>Springer Nature B.V</general><scope>C6C</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>3V.</scope><scope>7XB</scope><scope>88I</scope><scope>8AF</scope><scope>8AO</scope><scope>8FE</scope><scope>8FG</scope><scope>8FK</scope><scope>8G5</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>GNUQQ</scope><scope>GUQSH</scope><scope>HCIFZ</scope><scope>KB.</scope><scope>L6V</scope><scope>M2O</scope><scope>M2P</scope><scope>M7S</scope><scope>MBDVC</scope><scope>P5Z</scope><scope>P62</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PTHSS</scope><scope>Q9U</scope><scope>S0X</scope><orcidid>https://orcid.org/0000-0001-6733-4433</orcidid></search><sort><creationdate>20210301</creationdate><title>Gate Capacitance and Off-State Characteristics of E-Mode p-GaN Gate AlGaN/GaN High-Electron-Mobility Transistors After Gate Stress Bias</title><author>Lai, Yu-Chen ; 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A significant change was observed in the on-state capacitance when the gate stress bias was greater than 6 V. The corresponding threshold voltage exhibited a positive shift at low gate stress and a negative shift when the gate stress was greater than 6 V, which agreed with the shift observation from the
I
–
V
measurement. Moreover, the off-state leakage current increased significantly after the gate stress exceeded 6 V during the off-state characterization although the devices could be biased up to 1000 V without breakdown. The increase in the off-state leakage current would lead to higher power loss.</abstract><cop>New York</cop><pub>Springer US</pub><doi>10.1007/s11664-020-08691-w</doi><tpages>5</tpages><orcidid>https://orcid.org/0000-0001-6733-4433</orcidid><oa>free_for_read</oa></addata></record> |
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| subjects | Aluminum gallium nitrides Bias Capacitance Characterization and Evaluation of Materials Chemistry and Materials Science Electronics and Microelectronics Gallium nitrides High electron mobility transistors Instrumentation Leakage current Materials Science Optical and Electronic Materials Original Research Article Semiconductor devices Solid State Physics Threshold voltage Transistors |
| title | Gate Capacitance and Off-State Characteristics of E-Mode p-GaN Gate AlGaN/GaN High-Electron-Mobility Transistors After Gate Stress Bias |
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