Resonant tunnelling into the two-dimensional subbands of InSe layers

Two-dimensional (2D) van der Waals (vdW) crystals have attracted considerable interest for digital electronics beyond Si-based complementary metal oxide semiconductor technologies. Despite the transformative success of Si-based devices, there are limits to their miniaturization and functionalities....

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Veröffentlicht in:	Communications physics 2020-01, Vol.3 (1), Article 16
Hauptverfasser:	Kudrynskyi, Zakhar R., Kerfoot, James, Mazumder, Debarati, Greenaway, Mark T., Vdovin, Evgeni E., Makarovsky, Oleg, Kovalyuk, Zakhar D., Eaves, Laurence, Beton, Peter H., Patanè, Amalia
Format:	Artikel
Sprache:	eng
Schlagworte:	639/766/119/1000/1018 639/925/927/1007 Chemical potential CMOS Digital electronics Electrodes Electronics Graphene Heterostructures Miniaturization Physics Physics and Astronomy Quantum electronics Resistance Semiconductor devices Thickness Transistors
Online-Zugang:	Volltext
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