Controlling Phase‐Coherent Electron Transport in III‐Nitrides: Toward Room Temperature Negative Differential Resistance in AlGaN/GaN Double Barrier Structures

Resonant tunneling of electrons is important for the manufacture of high‐speed electronic oscillators and the electron injection control in quantum cascade lasers. In this work, room temperature negative differential resistance (NDR) in AlGaN/GaN double barrier structure with AlN/GaN digital alloy (...

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