Rear interface engineering of kesterite Cu2ZnSnSe4 solar cells by adding CuGaSe2 thin layers

Kesterite Cu2ZnSn(S,Se)4 thin film technology has been thoroughly investigated during the last decade as a promising solution in the field of low‐cost, sustainable, and environmental‐friendly photovoltaic technologies. However, despite efforts to boost kesterite solar cells performance by numerous s...

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Veröffentlicht in:	Progress in photovoltaics 2021-03, Vol.29 (3), p.334-343
Hauptverfasser:	Giraldo, Sergio, Fonoll‐Rubio, Robert, Jehl Li‐Kao, Zacharie, Sánchez, Yudania, Calvo‐Barrio, Lorenzo, Izquierdo‐Roca, Victor, Pérez‐Rodríguez, Alejandro, Saucedo, Edgardo
Format:	Artikel
Sprache:	eng
Schlagworte:	back surface field (BSF) Copper indium gallium selenides Copper zinc tin selenide Crystal defects Cu2ZnSnSe4 (CZTSe) Energy gap interface engineering Interlayers kesterite Morphology Photovoltaic cells Selenium Solar cells thin film PV Thin films
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