Bottom‐Electrode Nanoasperities as a Root of the High‐Performance Resistive‐Switching Effect

Resistive random access memory (ReRAM) has attracted considerable attention for next‐generation nonvolatile microelectronic memory because of its advantages, including scalability and fast switching speed. Many different parameters of memory cells contribute to their performance; specifically, the f...

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Veröffentlicht in:	Physica status solidi. PSS-RRL. Rapid research letters 2021-02, Vol.15 (2), p.n/a
Hauptverfasser:	Kuzmichev, Dmitry S., Chouprik, Anastasia A., Slavich, Aleksandr S., Kirtaev, Roman V., Negrov, Dmitry V.
Format:	Artikel
Sprache:	eng
Schlagworte:	asperities Atomic force microscopy Electric fields Electrodes Endurance filaments local current local electric fields Power consumption Random access memory roughness Stoichiometry Switching Tantalum Tantalum oxides
Online-Zugang:	Volltext
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