Semiconductor AlGaInAs/InP lasers (λ = 1450 - 1500 nm) with a strongly asymmetric waveguide

Semiconductor lasers based on AlGaInAs/InP heterostructures with a strongly asymmetric waveguide are studied. It is shown that the use of such a waveguide simultaneously with an increased quantum well energy depth provides conditions for increasing the output laser power. The semiconductor AlGaInAs/...

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Veröffentlicht in:	Quantum electronics (Woodbury, N.Y.) N.Y.), 2021-02, Vol.51 (2), p.133-136
Hauptverfasser:	Volkov, N A, Andreev, A Yu, Yarotskaya, I V, Ryaboshtan, Yu L, Svetogorov, V N, Ladugin, M A, Padalitsa, A A, Marmalyuk, A A, Slipchenko, S O, Lyutetskii, A V, Veselov, D A, Pikhtin, N A
Format:	Artikel
Sprache:	eng
Schlagworte:	AlGaInAs/InP asymmetric waveguide Asymmetry Continuous radiation heterostructure Heterostructures Indium phosphides Lasers Quantum wells Room temperature semiconductor laser Semiconductor lasers Waveguides
Online-Zugang:	Volltext
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