High-Performance Oxide TFTs With Co-Sputtered Indium Tin Oxide and Indium-Gallium-Zinc Oxide at Source and Drain Contacts

Amorphous indium-gallium-zinc oxide (IGZO) thin-film transistors (TFTs) have shown significant potential for application in transparent and flexible electronic devices. However, the source and drain (S/D) electrodes of IGZO TFTs with indium tin oxide (ITO) thin films can cause Schottky-like behavior...

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Veröffentlicht in:	IEEE electron device letters 2021-02, Vol.42 (2), p.168-171
1. Verfasser:	Choi, Sung-Hwan
Format:	Artikel
Sprache:	eng
Schlagworte:	Co-sputtered Conductivity contact resistance Electric contacts Electric variables Electrical properties Electrodes Electronic devices Engineering Engineering, Electrical & Electronic Gallium Glass substrates Indium gallium zinc oxide Indium tin oxide indium tin oxide (ITO) Indium tin oxides indium-gallium-zinc oxide (IGZO) Logic gates Low temperature Potential barriers Room temperature Science & Technology Semiconductor device measurement Semiconductor devices Surface reactions Technology Thin film transistors Thin films thin-film transistors (TFTs) Zinc oxide Zinc oxides
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