Boron and Barium Incorporation at the 4H-SiC/SiO2 Interface using a Laser Multi-Charged Ion Source

A laser multicharged ion source was used to perform interfacial treatment of the 4H-SiC/ SiO2 interface using B and Ba ions. A Q-switched Nd:YAG laser (wavelength {\lambda} = 1064 nm, pulse width {\tau} = 7 ns, and fluence F = 135 J/cm2) was used to ablate B and Ba targets to generate multicharged i...

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Veröffentlicht in:	arXiv.org 2021-01
Hauptverfasser:	Md Haider Shaim, Elsayed-Ali, Hani E
Format:	Artikel
Sprache:	eng
Schlagworte:	Ablation Barium Boron Electric fields Fluence Ion implantation Ion sources Ions Lasers Metal oxide semiconductors Neodymium lasers Pulse duration Semiconductor lasers Silicon dioxide YAG lasers
Online-Zugang:	Volltext
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