Effects of the N/S codoping configuration and ternary doping on the quantum capacitance of graphene

Heteroatom doping is considered to be a highly effective approach for changing the electronic properties of graphene. However, the effects of the doping mode and site have not been investigated in detail. We explored the effect of the N/S codoping configuration and ternary doping with other elements...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Journal of materials science 2019-06, Vol.54 (12), p.8995-9003
Hauptverfasser: Xu, Lingrui, Chen, Liangliang, Li, Lijie, Li, Xin
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 9003
container_issue 12
container_start_page 8995
container_title Journal of materials science
container_volume 54
creator Xu, Lingrui
Chen, Liangliang
Li, Lijie
Li, Xin
description Heteroatom doping is considered to be a highly effective approach for changing the electronic properties of graphene. However, the effects of the doping mode and site have not been investigated in detail. We explored the effect of the N/S codoping configuration and ternary doping with other elements on the quantum capacitance of graphene. It was found that at the same doping concentration, the Fermi levels are both shifted to the conduction band for chain doping and distributed doping, enhancing the electronic properties of graphene and effectively improving the quantum capacitance. The newly introduced heteroatoms contribute less to the obtained quantum capacitance than nitrogen and sulfur. N/S codoping is still a relatively effective doping method, and the optimal quantum capacitance was obtained for the nitrogen to sulfur ratio of 1:2. This work sheds light on the effect of the N/S codoping on the carbon electrode and suggests an effective approach for optimizing the quantum capacitance.
doi_str_mv 10.1007/s10853-019-03491-y
format Article
fullrecord <record><control><sourceid>gale_proqu</sourceid><recordid>TN_cdi_proquest_journals_2480913555</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><galeid>A580262235</galeid><sourcerecordid>A580262235</sourcerecordid><originalsourceid>FETCH-LOGICAL-c392t-740a97be82601acc9f425df3916510ebce9a4290973d984f6a8d55de932e72f13</originalsourceid><addsrcrecordid>eNp9kU1LxDAQhoMouH78AU8FTx6qk6Rpm-MifiyIgh_nENNJt7KbdpMU3H9v1griRXJIGJ5nmMxLyBmFSwpQXQUKteA5UJkDLyTNt3tkRkXF86IGvk9mAIzlrCjpITkK4QMARMXojJgba9HEkPU2i0vMHq9eMtM3_dC5Nj2c7drR69j1LtOuySJ6p_02-wFSdSdtRu3iuM6MHrTponYGd_1ar4clOjwhB1avAp7-3Mfk7fbm9fo-f3i6W1zPH3LDJYt5VYCW1TvWrASqjZG2YKKxXNJSUMB3g1IXTIKseCPrwpa6boRoUHKGFbOUH5Pzqe_g-82IIaqPfkzzroJiaQ2SciFEoi4nqtUrVJ2zffTapNPguks_Rtul-lzUwErG-E64-CMkJuJnbPUYglq8PP9l2cQa34fg0arBd-u0MUVB7ZJSU1IqJaW-k1LbJPFJCgl2Lfrfuf-xvgDiXZWa</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2480913555</pqid></control><display><type>article</type><title>Effects of the N/S codoping configuration and ternary doping on the quantum capacitance of graphene</title><source>SpringerLink Journals - AutoHoldings</source><creator>Xu, Lingrui ; Chen, Liangliang ; Li, Lijie ; Li, Xin</creator><creatorcontrib>Xu, Lingrui ; Chen, Liangliang ; Li, Lijie ; Li, Xin</creatorcontrib><description>Heteroatom doping is considered to be a highly effective approach for changing the electronic properties of graphene. However, the effects of the doping mode and site have not been investigated in detail. We explored the effect of the N/S codoping configuration and ternary doping with other elements on the quantum capacitance of graphene. It was found that at the same doping concentration, the Fermi levels are both shifted to the conduction band for chain doping and distributed doping, enhancing the electronic properties of graphene and effectively improving the quantum capacitance. The newly introduced heteroatoms contribute less to the obtained quantum capacitance than nitrogen and sulfur. N/S codoping is still a relatively effective doping method, and the optimal quantum capacitance was obtained for the nitrogen to sulfur ratio of 1:2. This work sheds light on the effect of the N/S codoping on the carbon electrode and suggests an effective approach for optimizing the quantum capacitance.</description><identifier>ISSN: 0022-2461</identifier><identifier>EISSN: 1573-4803</identifier><identifier>DOI: 10.1007/s10853-019-03491-y</identifier><language>eng</language><publisher>New York: Springer US</publisher><subject>Analysis ; Capacitance ; Characterization and Evaluation of Materials ; Chemistry and Materials Science ; Classical Mechanics ; Conduction bands ; Configurations ; Crystallography and Scattering Methods ; Doping ; Electronic Materials ; Electronic properties ; Graphene ; Materials Science ; Nitrogen ; Optimization ; Polymer Sciences ; Solid Mechanics ; Sulfur ; Sulfur compounds</subject><ispartof>Journal of materials science, 2019-06, Vol.54 (12), p.8995-9003</ispartof><rights>Springer Science+Business Media, LLC, part of Springer Nature 2019</rights><rights>COPYRIGHT 2019 Springer</rights><rights>Springer Science+Business Media, LLC, part of Springer Nature 2019.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c392t-740a97be82601acc9f425df3916510ebce9a4290973d984f6a8d55de932e72f13</citedby><cites>FETCH-LOGICAL-c392t-740a97be82601acc9f425df3916510ebce9a4290973d984f6a8d55de932e72f13</cites><orcidid>0000-0002-3813-0543 ; 0000-0003-0782-1373 ; 0000-0002-9840-6580 ; 0000-0001-5463-0831</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s10853-019-03491-y$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s10853-019-03491-y$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,780,784,27924,27925,41488,42557,51319</link.rule.ids></links><search><creatorcontrib>Xu, Lingrui</creatorcontrib><creatorcontrib>Chen, Liangliang</creatorcontrib><creatorcontrib>Li, Lijie</creatorcontrib><creatorcontrib>Li, Xin</creatorcontrib><title>Effects of the N/S codoping configuration and ternary doping on the quantum capacitance of graphene</title><title>Journal of materials science</title><addtitle>J Mater Sci</addtitle><description>Heteroatom doping is considered to be a highly effective approach for changing the electronic properties of graphene. However, the effects of the doping mode and site have not been investigated in detail. We explored the effect of the N/S codoping configuration and ternary doping with other elements on the quantum capacitance of graphene. It was found that at the same doping concentration, the Fermi levels are both shifted to the conduction band for chain doping and distributed doping, enhancing the electronic properties of graphene and effectively improving the quantum capacitance. The newly introduced heteroatoms contribute less to the obtained quantum capacitance than nitrogen and sulfur. N/S codoping is still a relatively effective doping method, and the optimal quantum capacitance was obtained for the nitrogen to sulfur ratio of 1:2. This work sheds light on the effect of the N/S codoping on the carbon electrode and suggests an effective approach for optimizing the quantum capacitance.</description><subject>Analysis</subject><subject>Capacitance</subject><subject>Characterization and Evaluation of Materials</subject><subject>Chemistry and Materials Science</subject><subject>Classical Mechanics</subject><subject>Conduction bands</subject><subject>Configurations</subject><subject>Crystallography and Scattering Methods</subject><subject>Doping</subject><subject>Electronic Materials</subject><subject>Electronic properties</subject><subject>Graphene</subject><subject>Materials Science</subject><subject>Nitrogen</subject><subject>Optimization</subject><subject>Polymer Sciences</subject><subject>Solid Mechanics</subject><subject>Sulfur</subject><subject>Sulfur compounds</subject><issn>0022-2461</issn><issn>1573-4803</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><sourceid>AFKRA</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><recordid>eNp9kU1LxDAQhoMouH78AU8FTx6qk6Rpm-MifiyIgh_nENNJt7KbdpMU3H9v1griRXJIGJ5nmMxLyBmFSwpQXQUKteA5UJkDLyTNt3tkRkXF86IGvk9mAIzlrCjpITkK4QMARMXojJgba9HEkPU2i0vMHq9eMtM3_dC5Nj2c7drR69j1LtOuySJ6p_02-wFSdSdtRu3iuM6MHrTponYGd_1ar4clOjwhB1avAp7-3Mfk7fbm9fo-f3i6W1zPH3LDJYt5VYCW1TvWrASqjZG2YKKxXNJSUMB3g1IXTIKseCPrwpa6boRoUHKGFbOUH5Pzqe_g-82IIaqPfkzzroJiaQ2SciFEoi4nqtUrVJ2zffTapNPguks_Rtul-lzUwErG-E64-CMkJuJnbPUYglq8PP9l2cQa34fg0arBd-u0MUVB7ZJSU1IqJaW-k1LbJPFJCgl2Lfrfuf-xvgDiXZWa</recordid><startdate>20190601</startdate><enddate>20190601</enddate><creator>Xu, Lingrui</creator><creator>Chen, Liangliang</creator><creator>Li, Lijie</creator><creator>Li, Xin</creator><general>Springer US</general><general>Springer</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>ISR</scope><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>AFKRA</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>HCIFZ</scope><scope>KB.</scope><scope>L6V</scope><scope>M7S</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>PTHSS</scope><orcidid>https://orcid.org/0000-0002-3813-0543</orcidid><orcidid>https://orcid.org/0000-0003-0782-1373</orcidid><orcidid>https://orcid.org/0000-0002-9840-6580</orcidid><orcidid>https://orcid.org/0000-0001-5463-0831</orcidid></search><sort><creationdate>20190601</creationdate><title>Effects of the N/S codoping configuration and ternary doping on the quantum capacitance of graphene</title><author>Xu, Lingrui ; Chen, Liangliang ; Li, Lijie ; Li, Xin</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c392t-740a97be82601acc9f425df3916510ebce9a4290973d984f6a8d55de932e72f13</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2019</creationdate><topic>Analysis</topic><topic>Capacitance</topic><topic>Characterization and Evaluation of Materials</topic><topic>Chemistry and Materials Science</topic><topic>Classical Mechanics</topic><topic>Conduction bands</topic><topic>Configurations</topic><topic>Crystallography and Scattering Methods</topic><topic>Doping</topic><topic>Electronic Materials</topic><topic>Electronic properties</topic><topic>Graphene</topic><topic>Materials Science</topic><topic>Nitrogen</topic><topic>Optimization</topic><topic>Polymer Sciences</topic><topic>Solid Mechanics</topic><topic>Sulfur</topic><topic>Sulfur compounds</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Xu, Lingrui</creatorcontrib><creatorcontrib>Chen, Liangliang</creatorcontrib><creatorcontrib>Li, Lijie</creatorcontrib><creatorcontrib>Li, Xin</creatorcontrib><collection>CrossRef</collection><collection>Gale In Context: Science</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science &amp; Engineering Collection</collection><collection>ProQuest Central UK/Ireland</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>SciTech Premium Collection</collection><collection>Materials Science Database</collection><collection>ProQuest Engineering Collection</collection><collection>Engineering Database</collection><collection>Materials Science Collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>Engineering Collection</collection><jtitle>Journal of materials science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Xu, Lingrui</au><au>Chen, Liangliang</au><au>Li, Lijie</au><au>Li, Xin</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effects of the N/S codoping configuration and ternary doping on the quantum capacitance of graphene</atitle><jtitle>Journal of materials science</jtitle><stitle>J Mater Sci</stitle><date>2019-06-01</date><risdate>2019</risdate><volume>54</volume><issue>12</issue><spage>8995</spage><epage>9003</epage><pages>8995-9003</pages><issn>0022-2461</issn><eissn>1573-4803</eissn><abstract>Heteroatom doping is considered to be a highly effective approach for changing the electronic properties of graphene. However, the effects of the doping mode and site have not been investigated in detail. We explored the effect of the N/S codoping configuration and ternary doping with other elements on the quantum capacitance of graphene. It was found that at the same doping concentration, the Fermi levels are both shifted to the conduction band for chain doping and distributed doping, enhancing the electronic properties of graphene and effectively improving the quantum capacitance. The newly introduced heteroatoms contribute less to the obtained quantum capacitance than nitrogen and sulfur. N/S codoping is still a relatively effective doping method, and the optimal quantum capacitance was obtained for the nitrogen to sulfur ratio of 1:2. This work sheds light on the effect of the N/S codoping on the carbon electrode and suggests an effective approach for optimizing the quantum capacitance.</abstract><cop>New York</cop><pub>Springer US</pub><doi>10.1007/s10853-019-03491-y</doi><tpages>9</tpages><orcidid>https://orcid.org/0000-0002-3813-0543</orcidid><orcidid>https://orcid.org/0000-0003-0782-1373</orcidid><orcidid>https://orcid.org/0000-0002-9840-6580</orcidid><orcidid>https://orcid.org/0000-0001-5463-0831</orcidid></addata></record>
fulltext fulltext
identifier ISSN: 0022-2461
ispartof Journal of materials science, 2019-06, Vol.54 (12), p.8995-9003
issn 0022-2461
1573-4803
language eng
recordid cdi_proquest_journals_2480913555
source SpringerLink Journals - AutoHoldings
subjects Analysis
Capacitance
Characterization and Evaluation of Materials
Chemistry and Materials Science
Classical Mechanics
Conduction bands
Configurations
Crystallography and Scattering Methods
Doping
Electronic Materials
Electronic properties
Graphene
Materials Science
Nitrogen
Optimization
Polymer Sciences
Solid Mechanics
Sulfur
Sulfur compounds
title Effects of the N/S codoping configuration and ternary doping on the quantum capacitance of graphene
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-20T10%3A09%3A55IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-gale_proqu&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Effects%20of%20the%20N/S%20codoping%20configuration%20and%20ternary%20doping%20on%20the%20quantum%20capacitance%20of%20graphene&rft.jtitle=Journal%20of%20materials%20science&rft.au=Xu,%20Lingrui&rft.date=2019-06-01&rft.volume=54&rft.issue=12&rft.spage=8995&rft.epage=9003&rft.pages=8995-9003&rft.issn=0022-2461&rft.eissn=1573-4803&rft_id=info:doi/10.1007/s10853-019-03491-y&rft_dat=%3Cgale_proqu%3EA580262235%3C/gale_proqu%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2480913555&rft_id=info:pmid/&rft_galeid=A580262235&rfr_iscdi=true