Semipolar (11¯01) InGaN/GaN red–amber–yellow light-emitting diodes on triangular-striped Si (100) substrate
The epitaxial growth of InGaN/GaN light-emitting diodes (LEDs) with high-indium (In) content on Si (100) substrate faces significant challenges. The study described in this paper focuses on semipolar yellow InGaN/GaN LEDs formed on a triangular-striped Si (100) substrate by metal organic chemical va...
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| Veröffentlicht in: | Journal of materials science 2019-05, Vol.54 (10), p.7780-7788 |
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| creator | Wang, Qi Yuan, Guodong Liu, Wenqiang Zhao, Shuai Liu, Zhiqiang Chen, Yu Wang, Junxi Li, Jinmin |
| description | The epitaxial growth of InGaN/GaN light-emitting diodes (LEDs) with high-indium (In) content on Si (100) substrate faces significant challenges. The study described in this paper focuses on semipolar yellow InGaN/GaN LEDs formed on a triangular-striped Si (100) substrate by metal organic chemical vapor deposition. By controlling the growth temperature of InGaN to modulate the In content of InGaN/GaN multiple quantum wells (MQWs), high-In-content InGaN/GaN MQWs were grown on semipolar (
1
1
¯
01
) planes at relatively low temperatures. Consequently, InGaN/GaN MQW LEDs grown on triangular-striped substrates produce emissions ranging from red to yellow under different injection currents. In particular, when the injection current exceeds 160 mA, the LEDs achieve stable yellow emission. This is the first time such a long waveband emission has been achieved in semipolar InGaN/GaN LEDs formed on Si (100) substrate. |
| doi_str_mv | 10.1007/s10853-019-03473-0 |
| format | Article |
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1
1
¯
01
) planes at relatively low temperatures. Consequently, InGaN/GaN MQW LEDs grown on triangular-striped substrates produce emissions ranging from red to yellow under different injection currents. In particular, when the injection current exceeds 160 mA, the LEDs achieve stable yellow emission. This is the first time such a long waveband emission has been achieved in semipolar InGaN/GaN LEDs formed on Si (100) substrate.</description><identifier>ISSN: 0022-2461</identifier><identifier>EISSN: 1573-4803</identifier><identifier>DOI: 10.1007/s10853-019-03473-0</identifier><language>eng</language><publisher>New York: Springer US</publisher><subject>Characterization and Evaluation of Materials ; Chemistry and Materials Science ; Classical Mechanics ; Crystallography and Scattering Methods ; Electronic Materials ; Emission ; Epitaxial growth ; Gallium nitrides ; Indium gallium nitrides ; Injection current ; Light emitting diodes ; Low temperature ; Materials Science ; Metalorganic chemical vapor deposition ; Organic chemicals ; Organic chemistry ; Polymer Sciences ; Quantum wells ; Silicon substrates ; Solid Mechanics</subject><ispartof>Journal of materials science, 2019-05, Vol.54 (10), p.7780-7788</ispartof><rights>Springer Science+Business Media, LLC, part of Springer Nature 2019</rights><rights>Springer Science+Business Media, LLC, part of Springer Nature 2019.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c319t-5d217157ba6b93d90d182b0e6f9cc950f8e158003641e8aef6f876c751c3a19c3</citedby><cites>FETCH-LOGICAL-c319t-5d217157ba6b93d90d182b0e6f9cc950f8e158003641e8aef6f876c751c3a19c3</cites><orcidid>0000-0002-5895-5016</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s10853-019-03473-0$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s10853-019-03473-0$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,776,780,27903,27904,41467,42536,51297</link.rule.ids></links><search><creatorcontrib>Wang, Qi</creatorcontrib><creatorcontrib>Yuan, Guodong</creatorcontrib><creatorcontrib>Liu, Wenqiang</creatorcontrib><creatorcontrib>Zhao, Shuai</creatorcontrib><creatorcontrib>Liu, Zhiqiang</creatorcontrib><creatorcontrib>Chen, Yu</creatorcontrib><creatorcontrib>Wang, Junxi</creatorcontrib><creatorcontrib>Li, Jinmin</creatorcontrib><title>Semipolar (11¯01) InGaN/GaN red–amber–yellow light-emitting diodes on triangular-striped Si (100) substrate</title><title>Journal of materials science</title><addtitle>J Mater Sci</addtitle><description>The epitaxial growth of InGaN/GaN light-emitting diodes (LEDs) with high-indium (In) content on Si (100) substrate faces significant challenges. The study described in this paper focuses on semipolar yellow InGaN/GaN LEDs formed on a triangular-striped Si (100) substrate by metal organic chemical vapor deposition. By controlling the growth temperature of InGaN to modulate the In content of InGaN/GaN multiple quantum wells (MQWs), high-In-content InGaN/GaN MQWs were grown on semipolar (
1
1
¯
01
) planes at relatively low temperatures. Consequently, InGaN/GaN MQW LEDs grown on triangular-striped substrates produce emissions ranging from red to yellow under different injection currents. In particular, when the injection current exceeds 160 mA, the LEDs achieve stable yellow emission. This is the first time such a long waveband emission has been achieved in semipolar InGaN/GaN LEDs formed on Si (100) substrate.</description><subject>Characterization and Evaluation of Materials</subject><subject>Chemistry and Materials Science</subject><subject>Classical Mechanics</subject><subject>Crystallography and Scattering Methods</subject><subject>Electronic Materials</subject><subject>Emission</subject><subject>Epitaxial growth</subject><subject>Gallium nitrides</subject><subject>Indium gallium nitrides</subject><subject>Injection current</subject><subject>Light emitting diodes</subject><subject>Low temperature</subject><subject>Materials Science</subject><subject>Metalorganic chemical vapor deposition</subject><subject>Organic chemicals</subject><subject>Organic chemistry</subject><subject>Polymer Sciences</subject><subject>Quantum wells</subject><subject>Silicon substrates</subject><subject>Solid Mechanics</subject><issn>0022-2461</issn><issn>1573-4803</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><sourceid>AFKRA</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><recordid>eNp9kE1OwzAQhS0EEqVwAVaW2NCF6UycPy9RBaUSgkVhHTmJE1KlSbAToe64AwfhDhyFkzAQJHYs7Hmy3nsjf4ydIlwgQDR3CHEgBaASIP2I1B6bYEDCj0HuswmA5wnPD_GQHTm3AYAg8nDCurXZVl1ba8vPET_eAWd81Sz13ZwOtyb_fH3T29RYmjtT1-0Lr6vyqRcU6_uqKXletblxvG14byvdlAN1CUe6MzlfV1QLMONuSOlN9-aYHRS6dubkd07Z4_XVw-JG3N4vV4vLW5FJVL0Icg8j-kCqw1TJXEGOsZeCCQuVZSqAIjYYxAAy9NHE2hRhEUdhFgWYSY0qk1N2NvZ2tn0ejOuTTTvYhlYmHjGJVRhEEbm80ZXZ1jlriqSz1VbbXYKQfJNNRrIJkU1-yNI9ZXIMOTI3pbF_1f-kvgCZ-3yU</recordid><startdate>20190501</startdate><enddate>20190501</enddate><creator>Wang, Qi</creator><creator>Yuan, Guodong</creator><creator>Liu, Wenqiang</creator><creator>Zhao, Shuai</creator><creator>Liu, Zhiqiang</creator><creator>Chen, Yu</creator><creator>Wang, Junxi</creator><creator>Li, Jinmin</creator><general>Springer US</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>AFKRA</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>HCIFZ</scope><scope>KB.</scope><scope>L6V</scope><scope>M7S</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>PTHSS</scope><orcidid>https://orcid.org/0000-0002-5895-5016</orcidid></search><sort><creationdate>20190501</creationdate><title>Semipolar (11¯01) InGaN/GaN red–amber–yellow light-emitting diodes on triangular-striped Si (100) substrate</title><author>Wang, Qi ; Yuan, Guodong ; Liu, Wenqiang ; Zhao, Shuai ; Liu, Zhiqiang ; Chen, Yu ; Wang, Junxi ; Li, Jinmin</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c319t-5d217157ba6b93d90d182b0e6f9cc950f8e158003641e8aef6f876c751c3a19c3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2019</creationdate><topic>Characterization and Evaluation of Materials</topic><topic>Chemistry and Materials Science</topic><topic>Classical Mechanics</topic><topic>Crystallography and Scattering Methods</topic><topic>Electronic Materials</topic><topic>Emission</topic><topic>Epitaxial growth</topic><topic>Gallium nitrides</topic><topic>Indium gallium nitrides</topic><topic>Injection current</topic><topic>Light emitting diodes</topic><topic>Low temperature</topic><topic>Materials Science</topic><topic>Metalorganic chemical vapor deposition</topic><topic>Organic chemicals</topic><topic>Organic chemistry</topic><topic>Polymer Sciences</topic><topic>Quantum wells</topic><topic>Silicon substrates</topic><topic>Solid Mechanics</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Wang, Qi</creatorcontrib><creatorcontrib>Yuan, Guodong</creatorcontrib><creatorcontrib>Liu, Wenqiang</creatorcontrib><creatorcontrib>Zhao, Shuai</creatorcontrib><creatorcontrib>Liu, Zhiqiang</creatorcontrib><creatorcontrib>Chen, Yu</creatorcontrib><creatorcontrib>Wang, Junxi</creatorcontrib><creatorcontrib>Li, Jinmin</creatorcontrib><collection>CrossRef</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central UK/Ireland</collection><collection>ProQuest Central</collection><collection>Technology Collection (ProQuest)</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>SciTech Premium Collection</collection><collection>Materials Science Database</collection><collection>ProQuest Engineering Collection</collection><collection>Engineering Database</collection><collection>Materials Science Collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>Engineering Collection</collection><jtitle>Journal of materials science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Wang, Qi</au><au>Yuan, Guodong</au><au>Liu, Wenqiang</au><au>Zhao, Shuai</au><au>Liu, Zhiqiang</au><au>Chen, Yu</au><au>Wang, Junxi</au><au>Li, Jinmin</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Semipolar (11¯01) InGaN/GaN red–amber–yellow light-emitting diodes on triangular-striped Si (100) substrate</atitle><jtitle>Journal of materials science</jtitle><stitle>J Mater Sci</stitle><date>2019-05-01</date><risdate>2019</risdate><volume>54</volume><issue>10</issue><spage>7780</spage><epage>7788</epage><pages>7780-7788</pages><issn>0022-2461</issn><eissn>1573-4803</eissn><abstract>The epitaxial growth of InGaN/GaN light-emitting diodes (LEDs) with high-indium (In) content on Si (100) substrate faces significant challenges. The study described in this paper focuses on semipolar yellow InGaN/GaN LEDs formed on a triangular-striped Si (100) substrate by metal organic chemical vapor deposition. By controlling the growth temperature of InGaN to modulate the In content of InGaN/GaN multiple quantum wells (MQWs), high-In-content InGaN/GaN MQWs were grown on semipolar (
1
1
¯
01
) planes at relatively low temperatures. Consequently, InGaN/GaN MQW LEDs grown on triangular-striped substrates produce emissions ranging from red to yellow under different injection currents. In particular, when the injection current exceeds 160 mA, the LEDs achieve stable yellow emission. This is the first time such a long waveband emission has been achieved in semipolar InGaN/GaN LEDs formed on Si (100) substrate.</abstract><cop>New York</cop><pub>Springer US</pub><doi>10.1007/s10853-019-03473-0</doi><tpages>9</tpages><orcidid>https://orcid.org/0000-0002-5895-5016</orcidid></addata></record> |
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| subjects | Characterization and Evaluation of Materials Chemistry and Materials Science Classical Mechanics Crystallography and Scattering Methods Electronic Materials Emission Epitaxial growth Gallium nitrides Indium gallium nitrides Injection current Light emitting diodes Low temperature Materials Science Metalorganic chemical vapor deposition Organic chemicals Organic chemistry Polymer Sciences Quantum wells Silicon substrates Solid Mechanics |
| title | Semipolar (11¯01) InGaN/GaN red–amber–yellow light-emitting diodes on triangular-striped Si (100) substrate |
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