Effect of Sn content on the structural and photoelectric properties of IATO films

Indium aluminum tin oxide (IATO) films with high Hall mobility have been deposited on the SiO 2 (0001) substrates by metal organic chemical vapor deposition. The structural, morphological, and optoelectronic properties of the IATO films with Sn contents varied from 0 to 18 % [Sn/(In+Al+Sn) atomic ratio] were studied in detail. Well-crystallized IATO film with the highest Hall mobility of 15.59 cm 2 V −1 s −1 was obtained at 15 % of Sn content, and the corresponding carrier concentration and resistivity were about 2.38 × 10 20 and 1.51 × 10 −3 Ω cm, respectively. The average transmittance for all the obtained films in the visible range was over 81 %, and the optical band gap of the films changed in the range of 4.05–5.03 eV.