A 5-V-Program 1-V-Sense Anti-Fuse Technology Featuring On-Demand Sense and Integrated Power Delivery in a 22-nm Ultra Low Power FinFET Process

A 11.56-kbit one-time programmable secure array featuring Intel's first high-volume manufacturing (HVM) ready anti-fuse memory using the 22FFL process technology is reported. First, design and process technology are co-optimized to minimize the operating voltage, peripheral reliability stress,...

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Veröffentlicht in:	IEEE solid-state circuits letters 2021, Vol.4, p.2-5
Hauptverfasser:	Kulkarni, Sarvesh H., Ikram, Umaira, Bhatt, Kedar, Chao, Yu-Lin, Chang, Yao-Feng, Jenkins, Ian, Murari, Venkatesh, Thambithurai, David, Hasan, Mohammad, Li, Jiabo, Paulson, Leif R., Sell, Bernhard, Bhattacharya, Uddalak, Zhang, Ying
Format:	Artikel
Sprache:	eng
Schlagworte:	Anti-fuse (AF) Arrays charge pump (CP) Charge pumps Design optimization Electric potential Electric power Electricity generation high-density (HD) Logic gates low-voltage (LV) one-time programmable (OTP) read-only memory (ROM) Power management Programming Rails Reliability Sensors Switches Transistors Voltage
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