Impact of the vertical strain on the Schottky barrier height for graphene/AlN heterojunction: a study by the first-principles method

Recent years, graphene-based van der Waals (vdW) heterojunction becomes more and more popular in optoelectronics, nanoelectronics, and spintronics device area. Besides, the modulation of Schottky barrier height (SBH) is rather desired to improve the performance of corresponding devices. In the curre...

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Veröffentlicht in:	The European physical journal. B, Condensed matter physics Condensed matter physics, 2021, Vol.94 (1), Article 28
Hauptverfasser:	Liu, Xuefei, Zhang, Zhaocai, Lv, Bing, Ding, Zhao, Luo, Zijiang
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum compounds Analysis Complex Systems Condensed Matter Physics Electron transport Electronic devices Electronic properties Electronic structure Electrons First principles Fluid- and Aerodynamics Graphene Graphite Heterojunctions Heterostructures Interlayers Methods Nanoelectronics Nanotechnology devices Optoelectronics Physics Physics and Astronomy Regular Article - Solid State and Materials Solid State Physics Spintronics
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