Chemical vapor deposition and temperature-dependent Raman characterization of two-dimensional vanadium ditelluride
Recently, ultrathin two-dimensional (2D) metallic vanadium dichalcogenides have attracted widespread attention because of the charge density wave (CDW) phase transition and possible ferromagnetism. Herein, we report the synthesis and temperature-dependent Raman characterization of the 2D vanadium di...
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| Veröffentlicht in: | RSC advances 2021-01, Vol.11 (5), p.2624-2629 |
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| creator | Hossain, Mongur Iqbal, Muhammad Ahsan Wu, Juanxia Xie, Liming |
| description | Recently, ultrathin two-dimensional (2D) metallic vanadium dichalcogenides have attracted widespread attention because of the charge density wave (CDW) phase transition and possible ferromagnetism. Herein, we report the synthesis and temperature-dependent Raman characterization of the 2D vanadium ditelluride (VTe
2
). The synthesis is done by atmospheric pressure chemical vapor deposition (APCVD) using vanadium chloride (VCl
3
) precursor on fluorphlogopite mica, sapphire, and h-BN substrates. A large area of the thin film with thickness ∼10 nm is grown on the hexagonal boron nitride (h-BN) substrate. Temperature-dependent Raman characterization of VTe
2
is conducted from room temperature to 513 K. Remarkable changes of Raman modes at around 413 K are observed, indicating the structural phase transition.
Two-dimensional vanadium ditelluride has been synthesized on mica, sapphire, and h-BN substrates by atmospheric pressure chemical vapor deposition. |
| doi_str_mv | 10.1039/d0ra07868a |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2479641813</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2479641813</sourcerecordid><originalsourceid>FETCH-LOGICAL-c494t-9e1376dee0015d73643a9a4da7336bc9654177f0cbd798a1a60d2278620afcfe3</originalsourceid><addsrcrecordid>eNpdkt1rFDEUxQdRbGn74rsy4IsUpuZrMsmLsKytCgWh6HO4m9xxU2YmY5Kp6F_fuFvXal4S7vnlcHNPquoFJReUcP3WkQikU1LBk-qYESEbRqR--uh8VJ2ldEvKki1lkj6vjngrmGAtPa7ieoujtzDUdzCHWDucQ_LZh6mGydUZxxkj5CViUyScHE65voERptpuIYLNGP0v2F0IfZ1_hMb5EadUCjvTCZxfxtr5jMOwRO_wtHrWw5Dw7GE_qb5eXX5Zf2yuP3_4tF5dN1ZokRuNlHfSIRJCW9dxKThoEA46zuXGatkK2nU9sRvXaQUUJHGMlUkwAr3tkZ9U7_a-87IZ0dnSeYTBzNGPEH-aAN78q0x-a76FO6Ok5oqLYvDmwSCG7wumbEafbHkGTBiWZFiZp1SKKFLQ1_-ht2GJZQKFEp2WgirKC3W-p2wMKUXsD81QYn6nad6Tm9UuzVWBXz1u_4D-ya4AL_dATPag_v0O_B6Eyqbq</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2479641813</pqid></control><display><type>article</type><title>Chemical vapor deposition and temperature-dependent Raman characterization of two-dimensional vanadium ditelluride</title><source>PMC (PubMed Central)</source><source>Directory of Open Access Journals</source><source>EZB Electronic Journals Library</source><source>PubMed Central Open Access</source><creator>Hossain, Mongur ; Iqbal, Muhammad Ahsan ; Wu, Juanxia ; Xie, Liming</creator><creatorcontrib>Hossain, Mongur ; Iqbal, Muhammad Ahsan ; Wu, Juanxia ; Xie, Liming</creatorcontrib><description>Recently, ultrathin two-dimensional (2D) metallic vanadium dichalcogenides have attracted widespread attention because of the charge density wave (CDW) phase transition and possible ferromagnetism. Herein, we report the synthesis and temperature-dependent Raman characterization of the 2D vanadium ditelluride (VTe
2
). The synthesis is done by atmospheric pressure chemical vapor deposition (APCVD) using vanadium chloride (VCl
3
) precursor on fluorphlogopite mica, sapphire, and h-BN substrates. A large area of the thin film with thickness ∼10 nm is grown on the hexagonal boron nitride (h-BN) substrate. Temperature-dependent Raman characterization of VTe
2
is conducted from room temperature to 513 K. Remarkable changes of Raman modes at around 413 K are observed, indicating the structural phase transition.
Two-dimensional vanadium ditelluride has been synthesized on mica, sapphire, and h-BN substrates by atmospheric pressure chemical vapor deposition.</description><identifier>ISSN: 2046-2069</identifier><identifier>EISSN: 2046-2069</identifier><identifier>DOI: 10.1039/d0ra07868a</identifier><identifier>PMID: 35424251</identifier><language>eng</language><publisher>England: Royal Society of Chemistry</publisher><subject>Boron nitride ; Charge density waves ; Chemical synthesis ; Chemical vapor deposition ; Chemistry ; Ferromagnetism ; Mica ; Phase transitions ; Room temperature ; Sapphire ; Substrates ; Temperature ; Temperature dependence ; Thickness ; Thin films ; Vanadium</subject><ispartof>RSC advances, 2021-01, Vol.11 (5), p.2624-2629</ispartof><rights>This journal is © The Royal Society of Chemistry.</rights><rights>Copyright Royal Society of Chemistry 2021</rights><rights>This journal is © The Royal Society of Chemistry 2021 The Royal Society of Chemistry</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c494t-9e1376dee0015d73643a9a4da7336bc9654177f0cbd798a1a60d2278620afcfe3</citedby><cites>FETCH-LOGICAL-c494t-9e1376dee0015d73643a9a4da7336bc9654177f0cbd798a1a60d2278620afcfe3</cites><orcidid>0000-0001-7571-6407</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://www.ncbi.nlm.nih.gov/pmc/articles/PMC8693834/pdf/$$EPDF$$P50$$Gpubmedcentral$$Hfree_for_read</linktopdf><linktohtml>$$Uhttps://www.ncbi.nlm.nih.gov/pmc/articles/PMC8693834/$$EHTML$$P50$$Gpubmedcentral$$Hfree_for_read</linktohtml><link.rule.ids>230,314,727,780,784,864,885,27922,27923,53789,53791</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/35424251$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Hossain, Mongur</creatorcontrib><creatorcontrib>Iqbal, Muhammad Ahsan</creatorcontrib><creatorcontrib>Wu, Juanxia</creatorcontrib><creatorcontrib>Xie, Liming</creatorcontrib><title>Chemical vapor deposition and temperature-dependent Raman characterization of two-dimensional vanadium ditelluride</title><title>RSC advances</title><addtitle>RSC Adv</addtitle><description>Recently, ultrathin two-dimensional (2D) metallic vanadium dichalcogenides have attracted widespread attention because of the charge density wave (CDW) phase transition and possible ferromagnetism. Herein, we report the synthesis and temperature-dependent Raman characterization of the 2D vanadium ditelluride (VTe
2
). The synthesis is done by atmospheric pressure chemical vapor deposition (APCVD) using vanadium chloride (VCl
3
) precursor on fluorphlogopite mica, sapphire, and h-BN substrates. A large area of the thin film with thickness ∼10 nm is grown on the hexagonal boron nitride (h-BN) substrate. Temperature-dependent Raman characterization of VTe
2
is conducted from room temperature to 513 K. Remarkable changes of Raman modes at around 413 K are observed, indicating the structural phase transition.
Two-dimensional vanadium ditelluride has been synthesized on mica, sapphire, and h-BN substrates by atmospheric pressure chemical vapor deposition.</description><subject>Boron nitride</subject><subject>Charge density waves</subject><subject>Chemical synthesis</subject><subject>Chemical vapor deposition</subject><subject>Chemistry</subject><subject>Ferromagnetism</subject><subject>Mica</subject><subject>Phase transitions</subject><subject>Room temperature</subject><subject>Sapphire</subject><subject>Substrates</subject><subject>Temperature</subject><subject>Temperature dependence</subject><subject>Thickness</subject><subject>Thin films</subject><subject>Vanadium</subject><issn>2046-2069</issn><issn>2046-2069</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><recordid>eNpdkt1rFDEUxQdRbGn74rsy4IsUpuZrMsmLsKytCgWh6HO4m9xxU2YmY5Kp6F_fuFvXal4S7vnlcHNPquoFJReUcP3WkQikU1LBk-qYESEbRqR--uh8VJ2ldEvKki1lkj6vjngrmGAtPa7ieoujtzDUdzCHWDucQ_LZh6mGydUZxxkj5CViUyScHE65voERptpuIYLNGP0v2F0IfZ1_hMb5EadUCjvTCZxfxtr5jMOwRO_wtHrWw5Dw7GE_qb5eXX5Zf2yuP3_4tF5dN1ZokRuNlHfSIRJCW9dxKThoEA46zuXGatkK2nU9sRvXaQUUJHGMlUkwAr3tkZ9U7_a-87IZ0dnSeYTBzNGPEH-aAN78q0x-a76FO6Ok5oqLYvDmwSCG7wumbEafbHkGTBiWZFiZp1SKKFLQ1_-ht2GJZQKFEp2WgirKC3W-p2wMKUXsD81QYn6nad6Tm9UuzVWBXz1u_4D-ya4AL_dATPag_v0O_B6Eyqbq</recordid><startdate>20210112</startdate><enddate>20210112</enddate><creator>Hossain, Mongur</creator><creator>Iqbal, Muhammad Ahsan</creator><creator>Wu, Juanxia</creator><creator>Xie, Liming</creator><general>Royal Society of Chemistry</general><general>The Royal Society of Chemistry</general><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>7X8</scope><scope>5PM</scope><orcidid>https://orcid.org/0000-0001-7571-6407</orcidid></search><sort><creationdate>20210112</creationdate><title>Chemical vapor deposition and temperature-dependent Raman characterization of two-dimensional vanadium ditelluride</title><author>Hossain, Mongur ; Iqbal, Muhammad Ahsan ; Wu, Juanxia ; Xie, Liming</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c494t-9e1376dee0015d73643a9a4da7336bc9654177f0cbd798a1a60d2278620afcfe3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><topic>Boron nitride</topic><topic>Charge density waves</topic><topic>Chemical synthesis</topic><topic>Chemical vapor deposition</topic><topic>Chemistry</topic><topic>Ferromagnetism</topic><topic>Mica</topic><topic>Phase transitions</topic><topic>Room temperature</topic><topic>Sapphire</topic><topic>Substrates</topic><topic>Temperature</topic><topic>Temperature dependence</topic><topic>Thickness</topic><topic>Thin films</topic><topic>Vanadium</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Hossain, Mongur</creatorcontrib><creatorcontrib>Iqbal, Muhammad Ahsan</creatorcontrib><creatorcontrib>Wu, Juanxia</creatorcontrib><creatorcontrib>Xie, Liming</creatorcontrib><collection>PubMed</collection><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>MEDLINE - Academic</collection><collection>PubMed Central (Full Participant titles)</collection><jtitle>RSC advances</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Hossain, Mongur</au><au>Iqbal, Muhammad Ahsan</au><au>Wu, Juanxia</au><au>Xie, Liming</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Chemical vapor deposition and temperature-dependent Raman characterization of two-dimensional vanadium ditelluride</atitle><jtitle>RSC advances</jtitle><addtitle>RSC Adv</addtitle><date>2021-01-12</date><risdate>2021</risdate><volume>11</volume><issue>5</issue><spage>2624</spage><epage>2629</epage><pages>2624-2629</pages><issn>2046-2069</issn><eissn>2046-2069</eissn><abstract>Recently, ultrathin two-dimensional (2D) metallic vanadium dichalcogenides have attracted widespread attention because of the charge density wave (CDW) phase transition and possible ferromagnetism. Herein, we report the synthesis and temperature-dependent Raman characterization of the 2D vanadium ditelluride (VTe
2
). The synthesis is done by atmospheric pressure chemical vapor deposition (APCVD) using vanadium chloride (VCl
3
) precursor on fluorphlogopite mica, sapphire, and h-BN substrates. A large area of the thin film with thickness ∼10 nm is grown on the hexagonal boron nitride (h-BN) substrate. Temperature-dependent Raman characterization of VTe
2
is conducted from room temperature to 513 K. Remarkable changes of Raman modes at around 413 K are observed, indicating the structural phase transition.
Two-dimensional vanadium ditelluride has been synthesized on mica, sapphire, and h-BN substrates by atmospheric pressure chemical vapor deposition.</abstract><cop>England</cop><pub>Royal Society of Chemistry</pub><pmid>35424251</pmid><doi>10.1039/d0ra07868a</doi><tpages>6</tpages><orcidid>https://orcid.org/0000-0001-7571-6407</orcidid><oa>free_for_read</oa></addata></record> |
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| subjects | Boron nitride Charge density waves Chemical synthesis Chemical vapor deposition Chemistry Ferromagnetism Mica Phase transitions Room temperature Sapphire Substrates Temperature Temperature dependence Thickness Thin films Vanadium |
| title | Chemical vapor deposition and temperature-dependent Raman characterization of two-dimensional vanadium ditelluride |
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