Characterization of substitutional and interstitial Eu+3-positions in CdS lattice

Cd1-xEuxS thin films, with x in the 0 ≤ x ≤ 5 at% range, were prepared by chemical bath at 80 °C on glass substrates. X ray diffraction (XRD) patterns reveal that the samples crystallize in cubic zinc blende phase, with high preferred orientation along the (111) direction. From XRD data the (111) in...

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Veröffentlicht in:	Materials chemistry and physics 2021-01, Vol.257, p.123763, Article 123763
Hauptverfasser:	Acosta-Silva, Y.J., Méndez-López, A., de Moure-Flores, F., Tomás, S., Lozada-Morales, R., Meléndez-Lira, M., Zelaya-Angel, O.
Format:	Artikel
Sprache:	eng
Schlagworte:	Cadmium sulfide CdEuS photoluminescence Diffraction patterns Eu doped CdS films Europium incorporation in II-VI compounds Glass substrates Hardening-softening of phonons Photoluminescence Preferred orientation Thin films Unit cell contraction-expansión X-ray diffraction Zincblende
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