Trapping Dynamics in GaN HEMTs for Millimeter-Wave Applications: Measurement-Based Characterization and Technology Comparison

Charge trapping effects represent a major challenge in the performance evaluation and the measurement-based compact modeling of modern short-gate-length (i.e., ≤0.15 μm) Gallium Nitride (GaN) high-electron mobility transistors (HEMT) technology for millimeter-wave applications. In this work, we prop...

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Veröffentlicht in:	Electronics (Basel) 2021-01, Vol.10 (2), p.137
Hauptverfasser:	Angelotti, Alberto Maria, Gibiino, Gian Piero, Florian, Corrado, Santarelli, Alberto
Format:	Artikel
Sprache:	eng
Schlagworte:	Behavior Gallium nitrides High electron mobility transistors Millimeter waves Modelling Performance evaluation Physics Trapping
Online-Zugang:	Volltext
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