An Accurate Characterization Method for Integrated Polarization Converters

We present a characterization method for polarization converters which improves the accuracy of traditional characterization methods significantly. An experimental demonstration of the method is presented on the InP-membrane-on-silicon (IMOS) platform. The design and fabrication of the polarization...

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Veröffentlicht in:IEEE journal of quantum electronics 2021-02, Vol.57 (1), p.1-6
Hauptverfasser: Reniers, Sander F. G., Williams, Kevin A., van der Tol, Jos J. G. M., Jiao, Yuqing
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container_issue 1
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container_title IEEE journal of quantum electronics
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creator Reniers, Sander F. G.
Williams, Kevin A.
van der Tol, Jos J. G. M.
Jiao, Yuqing
description We present a characterization method for polarization converters which improves the accuracy of traditional characterization methods significantly. An experimental demonstration of the method is presented on the InP-membrane-on-silicon (IMOS) platform. The design and fabrication of the polarization converter is discussed, as well as the simulated polarization conversion efficiency. A device of only 4 microns is shown to achieve 97.5%±0.5% polarization conversion, corresponding to an extinction ratio of -16± 0.9 dB. The traditional characterization method is compared to the new 4-port method, and the accuracy is improved from up to 20% to 0.5%.
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fullrecord <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_proquest_journals_2478142508</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>9311824</ieee_id><sourcerecordid>2478142508</sourcerecordid><originalsourceid>FETCH-LOGICAL-c380t-b7d2d810ebbc12c5991d4dee21377c3b6373328d07c6621ad0e4a056fb4bc8d83</originalsourceid><addsrcrecordid>eNqNkE1LxDAQQIMouH7cBS8Fj9J1Jkmb9LiUVVcUFfRc0mSqlbVZ06yiv96uK-vVUybw3gw8xo4QxohQnF3dT8ccOIwFSIVYbLERZplOUaHYZiMA1GmBhdple33_Mnyl1DBiV5MumVi7DCZSUj6bYGyk0H6Z2PouuaH47F3S-JDMukhPK8old35uNkjpu3cKg9MfsJ3GzHs6_H332eP59KG8TK9vL2bl5Dq1QkNMa-W40whU1xa5zYoCnXREHIVSVtS5UEJw7UDZPOdoHJA0kOVNLWurnRb77GS9dxH825L6WL34ZeiGkxWXSqPkGawoWFM2-L4P1FSL0L6a8FkhVKti1VCsWhWrfosNil4rH1T7prctdZY2GgDkXGY55sMEWLbxJ0Dpl10c1NP_qwN9vKZboj-qEIiaS_ENHLeHkQ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2478142508</pqid></control><display><type>article</type><title>An Accurate Characterization Method for Integrated Polarization Converters</title><source>IEEE Xplore</source><creator>Reniers, Sander F. G. ; Williams, Kevin A. ; van der Tol, Jos J. G. M. ; Jiao, Yuqing</creator><creatorcontrib>Reniers, Sander F. G. ; Williams, Kevin A. ; van der Tol, Jos J. G. M. ; Jiao, Yuqing</creatorcontrib><description>We present a characterization method for polarization converters which improves the accuracy of traditional characterization methods significantly. An experimental demonstration of the method is presented on the InP-membrane-on-silicon (IMOS) platform. The design and fabrication of the polarization converter is discussed, as well as the simulated polarization conversion efficiency. A device of only 4 microns is shown to achieve 97.5%±0.5% polarization conversion, corresponding to an extinction ratio of -16± 0.9 dB. The traditional characterization method is compared to the new 4-port method, and the accuracy is improved from up to 20% to 0.5%.</description><identifier>ISSN: 0018-9197</identifier><identifier>EISSN: 1558-1713</identifier><identifier>DOI: 10.1109/JQE.2020.3047119</identifier><identifier>CODEN: IEJQA7</identifier><language>eng</language><publisher>PISCATAWAY: IEEE</publisher><subject>4-port method ; accurate characterization method ; Converters ; Couplers ; elemental semiconductors ; Engineering ; Engineering, Electrical &amp; Electronic ; Gratings ; III-V semiconductor materials ; III-V semiconductors ; indium compounds ; Indium phosphide ; InP-membrane-on-silicon platform ; InP-Si ; Insertion loss ; integrated optics ; integrated polarization converters ; Loss measurement ; nanophotonics ; optical fabrication ; optical losses ; optical polarisers ; Optics ; photonic crystals ; Photonic integrated circuits ; Physical Sciences ; Physics ; Physics, Applied ; Polarization ; polarization converter ; polarization converters ; Quantum Science &amp; Technology ; Science &amp; Technology ; silicon ; Silicon nitride ; simulated polarization conversion efficiency ; size 4.0 micron ; Technology</subject><ispartof>IEEE journal of quantum electronics, 2021-02, Vol.57 (1), p.1-6</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2021</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>true</woscitedreferencessubscribed><woscitedreferencescount>3</woscitedreferencescount><woscitedreferencesoriginalsourcerecordid>wos000624561600001</woscitedreferencesoriginalsourcerecordid><citedby>FETCH-LOGICAL-c380t-b7d2d810ebbc12c5991d4dee21377c3b6373328d07c6621ad0e4a056fb4bc8d83</citedby><cites>FETCH-LOGICAL-c380t-b7d2d810ebbc12c5991d4dee21377c3b6373328d07c6621ad0e4a056fb4bc8d83</cites><orcidid>0000-0003-2757-8948 ; 0000-0002-6750-2625 ; 0000-0001-7623-336X</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/9311824$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>315,781,785,797,27929,27930,39263,54763</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/9311824$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Reniers, Sander F. G.</creatorcontrib><creatorcontrib>Williams, Kevin A.</creatorcontrib><creatorcontrib>van der Tol, Jos J. G. M.</creatorcontrib><creatorcontrib>Jiao, Yuqing</creatorcontrib><title>An Accurate Characterization Method for Integrated Polarization Converters</title><title>IEEE journal of quantum electronics</title><addtitle>JQE</addtitle><addtitle>IEEE J QUANTUM ELECT</addtitle><description>We present a characterization method for polarization converters which improves the accuracy of traditional characterization methods significantly. An experimental demonstration of the method is presented on the InP-membrane-on-silicon (IMOS) platform. The design and fabrication of the polarization converter is discussed, as well as the simulated polarization conversion efficiency. A device of only 4 microns is shown to achieve 97.5%±0.5% polarization conversion, corresponding to an extinction ratio of -16± 0.9 dB. The traditional characterization method is compared to the new 4-port method, and the accuracy is improved from up to 20% to 0.5%.</description><subject>4-port method</subject><subject>accurate characterization method</subject><subject>Converters</subject><subject>Couplers</subject><subject>elemental semiconductors</subject><subject>Engineering</subject><subject>Engineering, Electrical &amp; Electronic</subject><subject>Gratings</subject><subject>III-V semiconductor materials</subject><subject>III-V semiconductors</subject><subject>indium compounds</subject><subject>Indium phosphide</subject><subject>InP-membrane-on-silicon platform</subject><subject>InP-Si</subject><subject>Insertion loss</subject><subject>integrated optics</subject><subject>integrated polarization converters</subject><subject>Loss measurement</subject><subject>nanophotonics</subject><subject>optical fabrication</subject><subject>optical losses</subject><subject>optical polarisers</subject><subject>Optics</subject><subject>photonic crystals</subject><subject>Photonic integrated circuits</subject><subject>Physical Sciences</subject><subject>Physics</subject><subject>Physics, Applied</subject><subject>Polarization</subject><subject>polarization converter</subject><subject>polarization converters</subject><subject>Quantum Science &amp; Technology</subject><subject>Science &amp; Technology</subject><subject>silicon</subject><subject>Silicon nitride</subject><subject>simulated polarization conversion efficiency</subject><subject>size 4.0 micron</subject><subject>Technology</subject><issn>0018-9197</issn><issn>1558-1713</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><sourceid>HGBXW</sourceid><recordid>eNqNkE1LxDAQQIMouH7cBS8Fj9J1Jkmb9LiUVVcUFfRc0mSqlbVZ06yiv96uK-vVUybw3gw8xo4QxohQnF3dT8ccOIwFSIVYbLERZplOUaHYZiMA1GmBhdple33_Mnyl1DBiV5MumVi7DCZSUj6bYGyk0H6Z2PouuaH47F3S-JDMukhPK8old35uNkjpu3cKg9MfsJ3GzHs6_H332eP59KG8TK9vL2bl5Dq1QkNMa-W40whU1xa5zYoCnXREHIVSVtS5UEJw7UDZPOdoHJA0kOVNLWurnRb77GS9dxH825L6WL34ZeiGkxWXSqPkGawoWFM2-L4P1FSL0L6a8FkhVKti1VCsWhWrfosNil4rH1T7prctdZY2GgDkXGY55sMEWLbxJ0Dpl10c1NP_qwN9vKZboj-qEIiaS_ENHLeHkQ</recordid><startdate>20210201</startdate><enddate>20210201</enddate><creator>Reniers, Sander F. G.</creator><creator>Williams, Kevin A.</creator><creator>van der Tol, Jos J. G. M.</creator><creator>Jiao, Yuqing</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>BLEPL</scope><scope>DTL</scope><scope>HGBXW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0003-2757-8948</orcidid><orcidid>https://orcid.org/0000-0002-6750-2625</orcidid><orcidid>https://orcid.org/0000-0001-7623-336X</orcidid></search><sort><creationdate>20210201</creationdate><title>An Accurate Characterization Method for Integrated Polarization Converters</title><author>Reniers, Sander F. G. ; Williams, Kevin A. ; van der Tol, Jos J. G. M. ; Jiao, Yuqing</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c380t-b7d2d810ebbc12c5991d4dee21377c3b6373328d07c6621ad0e4a056fb4bc8d83</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><topic>4-port method</topic><topic>accurate characterization method</topic><topic>Converters</topic><topic>Couplers</topic><topic>elemental semiconductors</topic><topic>Engineering</topic><topic>Engineering, Electrical &amp; Electronic</topic><topic>Gratings</topic><topic>III-V semiconductor materials</topic><topic>III-V semiconductors</topic><topic>indium compounds</topic><topic>Indium phosphide</topic><topic>InP-membrane-on-silicon platform</topic><topic>InP-Si</topic><topic>Insertion loss</topic><topic>integrated optics</topic><topic>integrated polarization converters</topic><topic>Loss measurement</topic><topic>nanophotonics</topic><topic>optical fabrication</topic><topic>optical losses</topic><topic>optical polarisers</topic><topic>Optics</topic><topic>photonic crystals</topic><topic>Photonic integrated circuits</topic><topic>Physical Sciences</topic><topic>Physics</topic><topic>Physics, Applied</topic><topic>Polarization</topic><topic>polarization converter</topic><topic>polarization converters</topic><topic>Quantum Science &amp; Technology</topic><topic>Science &amp; Technology</topic><topic>silicon</topic><topic>Silicon nitride</topic><topic>simulated polarization conversion efficiency</topic><topic>size 4.0 micron</topic><topic>Technology</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Reniers, Sander F. G.</creatorcontrib><creatorcontrib>Williams, Kevin A.</creatorcontrib><creatorcontrib>van der Tol, Jos J. G. M.</creatorcontrib><creatorcontrib>Jiao, Yuqing</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) Online</collection><collection>IEEE Xplore</collection><collection>Web of Science Core Collection</collection><collection>Science Citation Index Expanded</collection><collection>Web of Science - Science Citation Index Expanded - 2021</collection><collection>CrossRef</collection><collection>Electronics &amp; Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE journal of quantum electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Reniers, Sander F. G.</au><au>Williams, Kevin A.</au><au>van der Tol, Jos J. G. M.</au><au>Jiao, Yuqing</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>An Accurate Characterization Method for Integrated Polarization Converters</atitle><jtitle>IEEE journal of quantum electronics</jtitle><stitle>JQE</stitle><stitle>IEEE J QUANTUM ELECT</stitle><date>2021-02-01</date><risdate>2021</risdate><volume>57</volume><issue>1</issue><spage>1</spage><epage>6</epage><pages>1-6</pages><issn>0018-9197</issn><eissn>1558-1713</eissn><coden>IEJQA7</coden><abstract>We present a characterization method for polarization converters which improves the accuracy of traditional characterization methods significantly. An experimental demonstration of the method is presented on the InP-membrane-on-silicon (IMOS) platform. The design and fabrication of the polarization converter is discussed, as well as the simulated polarization conversion efficiency. A device of only 4 microns is shown to achieve 97.5%±0.5% polarization conversion, corresponding to an extinction ratio of -16± 0.9 dB. The traditional characterization method is compared to the new 4-port method, and the accuracy is improved from up to 20% to 0.5%.</abstract><cop>PISCATAWAY</cop><pub>IEEE</pub><doi>10.1109/JQE.2020.3047119</doi><tpages>6</tpages><orcidid>https://orcid.org/0000-0003-2757-8948</orcidid><orcidid>https://orcid.org/0000-0002-6750-2625</orcidid><orcidid>https://orcid.org/0000-0001-7623-336X</orcidid><oa>free_for_read</oa></addata></record>
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subjects 4-port method
accurate characterization method
Converters
Couplers
elemental semiconductors
Engineering
Engineering, Electrical & Electronic
Gratings
III-V semiconductor materials
III-V semiconductors
indium compounds
Indium phosphide
InP-membrane-on-silicon platform
InP-Si
Insertion loss
integrated optics
integrated polarization converters
Loss measurement
nanophotonics
optical fabrication
optical losses
optical polarisers
Optics
photonic crystals
Photonic integrated circuits
Physical Sciences
Physics
Physics, Applied
Polarization
polarization converter
polarization converters
Quantum Science & Technology
Science & Technology
silicon
Silicon nitride
simulated polarization conversion efficiency
size 4.0 micron
Technology
title An Accurate Characterization Method for Integrated Polarization Converters
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-13T18%3A13%3A05IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=An%20Accurate%20Characterization%20Method%20for%20Integrated%20Polarization%20Converters&rft.jtitle=IEEE%20journal%20of%20quantum%20electronics&rft.au=Reniers,%20Sander%20F.%20G.&rft.date=2021-02-01&rft.volume=57&rft.issue=1&rft.spage=1&rft.epage=6&rft.pages=1-6&rft.issn=0018-9197&rft.eissn=1558-1713&rft.coden=IEJQA7&rft_id=info:doi/10.1109/JQE.2020.3047119&rft_dat=%3Cproquest_RIE%3E2478142508%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2478142508&rft_id=info:pmid/&rft_ieee_id=9311824&rfr_iscdi=true