An Accurate Characterization Method for Integrated Polarization Converters
We present a characterization method for polarization converters which improves the accuracy of traditional characterization methods significantly. An experimental demonstration of the method is presented on the InP-membrane-on-silicon (IMOS) platform. The design and fabrication of the polarization...
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Veröffentlicht in: | IEEE journal of quantum electronics 2021-02, Vol.57 (1), p.1-6 |
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creator | Reniers, Sander F. G. Williams, Kevin A. van der Tol, Jos J. G. M. Jiao, Yuqing |
description | We present a characterization method for polarization converters which improves the accuracy of traditional characterization methods significantly. An experimental demonstration of the method is presented on the InP-membrane-on-silicon (IMOS) platform. The design and fabrication of the polarization converter is discussed, as well as the simulated polarization conversion efficiency. A device of only 4 microns is shown to achieve 97.5%±0.5% polarization conversion, corresponding to an extinction ratio of -16± 0.9 dB. The traditional characterization method is compared to the new 4-port method, and the accuracy is improved from up to 20% to 0.5%. |
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G.</creatorcontrib><creatorcontrib>Williams, Kevin A.</creatorcontrib><creatorcontrib>van der Tol, Jos J. G. M.</creatorcontrib><creatorcontrib>Jiao, Yuqing</creatorcontrib><title>An Accurate Characterization Method for Integrated Polarization Converters</title><title>IEEE journal of quantum electronics</title><addtitle>JQE</addtitle><addtitle>IEEE J QUANTUM ELECT</addtitle><description>We present a characterization method for polarization converters which improves the accuracy of traditional characterization methods significantly. An experimental demonstration of the method is presented on the InP-membrane-on-silicon (IMOS) platform. The design and fabrication of the polarization converter is discussed, as well as the simulated polarization conversion efficiency. A device of only 4 microns is shown to achieve 97.5%±0.5% polarization conversion, corresponding to an extinction ratio of -16± 0.9 dB. The traditional characterization method is compared to the new 4-port method, and the accuracy is improved from up to 20% to 0.5%.</description><subject>4-port method</subject><subject>accurate characterization method</subject><subject>Converters</subject><subject>Couplers</subject><subject>elemental semiconductors</subject><subject>Engineering</subject><subject>Engineering, Electrical & Electronic</subject><subject>Gratings</subject><subject>III-V semiconductor materials</subject><subject>III-V semiconductors</subject><subject>indium compounds</subject><subject>Indium phosphide</subject><subject>InP-membrane-on-silicon platform</subject><subject>InP-Si</subject><subject>Insertion loss</subject><subject>integrated optics</subject><subject>integrated polarization converters</subject><subject>Loss measurement</subject><subject>nanophotonics</subject><subject>optical fabrication</subject><subject>optical losses</subject><subject>optical polarisers</subject><subject>Optics</subject><subject>photonic crystals</subject><subject>Photonic integrated circuits</subject><subject>Physical Sciences</subject><subject>Physics</subject><subject>Physics, Applied</subject><subject>Polarization</subject><subject>polarization converter</subject><subject>polarization converters</subject><subject>Quantum Science & Technology</subject><subject>Science & Technology</subject><subject>silicon</subject><subject>Silicon nitride</subject><subject>simulated polarization conversion efficiency</subject><subject>size 4.0 micron</subject><subject>Technology</subject><issn>0018-9197</issn><issn>1558-1713</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><sourceid>HGBXW</sourceid><recordid>eNqNkE1LxDAQQIMouH7cBS8Fj9J1Jkmb9LiUVVcUFfRc0mSqlbVZ06yiv96uK-vVUybw3gw8xo4QxohQnF3dT8ccOIwFSIVYbLERZplOUaHYZiMA1GmBhdple33_Mnyl1DBiV5MumVi7DCZSUj6bYGyk0H6Z2PouuaH47F3S-JDMukhPK8old35uNkjpu3cKg9MfsJ3GzHs6_H332eP59KG8TK9vL2bl5Dq1QkNMa-W40whU1xa5zYoCnXREHIVSVtS5UEJw7UDZPOdoHJA0kOVNLWurnRb77GS9dxH825L6WL34ZeiGkxWXSqPkGawoWFM2-L4P1FSL0L6a8FkhVKti1VCsWhWrfosNil4rH1T7prctdZY2GgDkXGY55sMEWLbxJ0Dpl10c1NP_qwN9vKZboj-qEIiaS_ENHLeHkQ</recordid><startdate>20210201</startdate><enddate>20210201</enddate><creator>Reniers, Sander F. 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M. ; Jiao, Yuqing</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c380t-b7d2d810ebbc12c5991d4dee21377c3b6373328d07c6621ad0e4a056fb4bc8d83</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><topic>4-port method</topic><topic>accurate characterization method</topic><topic>Converters</topic><topic>Couplers</topic><topic>elemental semiconductors</topic><topic>Engineering</topic><topic>Engineering, Electrical & Electronic</topic><topic>Gratings</topic><topic>III-V semiconductor materials</topic><topic>III-V semiconductors</topic><topic>indium compounds</topic><topic>Indium phosphide</topic><topic>InP-membrane-on-silicon platform</topic><topic>InP-Si</topic><topic>Insertion loss</topic><topic>integrated optics</topic><topic>integrated polarization converters</topic><topic>Loss measurement</topic><topic>nanophotonics</topic><topic>optical fabrication</topic><topic>optical losses</topic><topic>optical polarisers</topic><topic>Optics</topic><topic>photonic crystals</topic><topic>Photonic integrated circuits</topic><topic>Physical Sciences</topic><topic>Physics</topic><topic>Physics, Applied</topic><topic>Polarization</topic><topic>polarization converter</topic><topic>polarization converters</topic><topic>Quantum Science & Technology</topic><topic>Science & Technology</topic><topic>silicon</topic><topic>Silicon nitride</topic><topic>simulated polarization conversion efficiency</topic><topic>size 4.0 micron</topic><topic>Technology</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Reniers, Sander F. G.</creatorcontrib><creatorcontrib>Williams, Kevin A.</creatorcontrib><creatorcontrib>van der Tol, Jos J. G. M.</creatorcontrib><creatorcontrib>Jiao, Yuqing</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) Online</collection><collection>IEEE Xplore</collection><collection>Web of Science Core Collection</collection><collection>Science Citation Index Expanded</collection><collection>Web of Science - Science Citation Index Expanded - 2021</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE journal of quantum electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Reniers, Sander F. G.</au><au>Williams, Kevin A.</au><au>van der Tol, Jos J. G. 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A device of only 4 microns is shown to achieve 97.5%±0.5% polarization conversion, corresponding to an extinction ratio of -16± 0.9 dB. The traditional characterization method is compared to the new 4-port method, and the accuracy is improved from up to 20% to 0.5%.</abstract><cop>PISCATAWAY</cop><pub>IEEE</pub><doi>10.1109/JQE.2020.3047119</doi><tpages>6</tpages><orcidid>https://orcid.org/0000-0003-2757-8948</orcidid><orcidid>https://orcid.org/0000-0002-6750-2625</orcidid><orcidid>https://orcid.org/0000-0001-7623-336X</orcidid><oa>free_for_read</oa></addata></record> |
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subjects | 4-port method accurate characterization method Converters Couplers elemental semiconductors Engineering Engineering, Electrical & Electronic Gratings III-V semiconductor materials III-V semiconductors indium compounds Indium phosphide InP-membrane-on-silicon platform InP-Si Insertion loss integrated optics integrated polarization converters Loss measurement nanophotonics optical fabrication optical losses optical polarisers Optics photonic crystals Photonic integrated circuits Physical Sciences Physics Physics, Applied Polarization polarization converter polarization converters Quantum Science & Technology Science & Technology silicon Silicon nitride simulated polarization conversion efficiency size 4.0 micron Technology |
title | An Accurate Characterization Method for Integrated Polarization Converters |
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