Oxygen partial pressure influenced stoichiometry, structural, electrical, and optical properties of DC reactive sputtered hafnium oxide films
HfO2 films have been deposited on quartz and p‐type Si (100) substrates using DC reactive magnetron sputtering technique by sputtering of hafnium target at different oxygen partial pressures. Variation of cathode potential with oxygen partial pressure was systematically studied. The influence of oxy...
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| Veröffentlicht in: | Surface and interface analysis 2021-02, Vol.53 (2), p.206-214 |
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| creator | Venkataiah, Sunke Chandra, S.V. Jagadeesh Chalapathi, Uppala Ramana, Ch.V.V. Uthanna, Suda |
| description | HfO2 films have been deposited on quartz and p‐type Si (100) substrates using DC reactive magnetron sputtering technique by sputtering of hafnium target at different oxygen partial pressures. Variation of cathode potential with oxygen partial pressure was systematically studied. The influence of oxygen partial pressure on chemical composition, crystallographic structure, and optical properties of HfO2 films was systematically investigated. X‐ray photoelectron spectroscopy and energy dispersive X‐ray analysis were employed to determine the chemical composition. The films formed at oxygen partial pressure of 5 × 10−4 Torr were of stoichiometric HfO2. X‐ray diffractometer studies revealed that the films formed at 5 × 10−4 Torr were weakly crystallized with monoclinic structure. Optical bandgap of the HfO2 films increased with increasing oxygen partial pressure. Metal oxide semiconductor structures with configuration of Al/HfO2/p‐Si were fabricated and studied its dielectric and electrical properties. From these studies, it is confirmed that HfO2 film‐based metal oxide semiconductor devices formed at an optimum oxygen partial pressure of 5 × 10−5 Torr showed dielectric constant of 13 with leakage current density of 4.7 × 10−7 A/cm2. |
| doi_str_mv | 10.1002/sia.6902 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2477396024</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2477396024</sourcerecordid><originalsourceid>FETCH-LOGICAL-c2932-8d1d60bd7fa386d258ce4556af8a5e7d118b441affa4372bac2f25de143282e33</originalsourceid><addsrcrecordid>eNp1kE1LAzEQhoMoWKvgTwh48dCtSTb7dSz1q1DoQT0vaTKxKftlktXuj_A_m7VePc0MPDwz8yJ0TcmcEsLunBHztCDsBE0oKdKoKGh-iiaEchYxzug5unBuTwjJ4zydoO_NYXiHBnfCeiMq3FlwrreATaOrHhoJCjvfGrkzbQ3eDrMw2l763opqhqEC6a2RYy8ahdvOj0PQtB0EIzjcany_xBaE9OYTsOt678EG7U7oxvQ1bg9GAdamqt0lOtOicnD1V6fo7fHhdfkcrTdPq-ViHUlWxCzKFVUp2apMi_CEYkkugSdJKnQuEsgUpfmWcyq0FjzO2FZIplmigPKY5QzieIpujt5w50cPzpf7trdNWFkynmVxkRLGA3V7pKRtnbOgy86aWtihpKQcwy5D2OUYdkCjI_plKhj-5cqX1eKX_wGbnIOy</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2477396024</pqid></control><display><type>article</type><title>Oxygen partial pressure influenced stoichiometry, structural, electrical, and optical properties of DC reactive sputtered hafnium oxide films</title><source>Wiley Online Library Journals Frontfile Complete</source><creator>Venkataiah, Sunke ; Chandra, S.V. Jagadeesh ; Chalapathi, Uppala ; Ramana, Ch.V.V. ; Uthanna, Suda</creator><creatorcontrib>Venkataiah, Sunke ; Chandra, S.V. Jagadeesh ; Chalapathi, Uppala ; Ramana, Ch.V.V. ; Uthanna, Suda</creatorcontrib><description>HfO2 films have been deposited on quartz and p‐type Si (100) substrates using DC reactive magnetron sputtering technique by sputtering of hafnium target at different oxygen partial pressures. Variation of cathode potential with oxygen partial pressure was systematically studied. The influence of oxygen partial pressure on chemical composition, crystallographic structure, and optical properties of HfO2 films was systematically investigated. X‐ray photoelectron spectroscopy and energy dispersive X‐ray analysis were employed to determine the chemical composition. The films formed at oxygen partial pressure of 5 × 10−4 Torr were of stoichiometric HfO2. X‐ray diffractometer studies revealed that the films formed at 5 × 10−4 Torr were weakly crystallized with monoclinic structure. Optical bandgap of the HfO2 films increased with increasing oxygen partial pressure. Metal oxide semiconductor structures with configuration of Al/HfO2/p‐Si were fabricated and studied its dielectric and electrical properties. From these studies, it is confirmed that HfO2 film‐based metal oxide semiconductor devices formed at an optimum oxygen partial pressure of 5 × 10−5 Torr showed dielectric constant of 13 with leakage current density of 4.7 × 10−7 A/cm2.</description><identifier>ISSN: 0142-2421</identifier><identifier>EISSN: 1096-9918</identifier><identifier>DOI: 10.1002/sia.6902</identifier><language>eng</language><publisher>Bognor Regis: Wiley Subscription Services, Inc</publisher><subject>Aluminum ; Chemical composition ; Crystal structure ; Crystallization ; Crystallography ; Dielectric properties ; Electrical properties ; Hafnium oxide ; Leakage current ; leakage currents ; Magnetron sputtering ; Metal oxide semiconductors ; Metal oxides ; MOS devices ; optical bandgap ; Optical properties ; Oxide coatings ; Oxygen ; Partial pressure ; Photoelectrons ; reactive sputtering ; Semiconductor devices ; Silicon substrates ; Stoichiometry</subject><ispartof>Surface and interface analysis, 2021-02, Vol.53 (2), p.206-214</ispartof><rights>2020 John Wiley & Sons, Ltd.</rights><rights>2021 John Wiley & Sons, Ltd.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c2932-8d1d60bd7fa386d258ce4556af8a5e7d118b441affa4372bac2f25de143282e33</citedby><cites>FETCH-LOGICAL-c2932-8d1d60bd7fa386d258ce4556af8a5e7d118b441affa4372bac2f25de143282e33</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1002%2Fsia.6902$$EPDF$$P50$$Gwiley$$H</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1002%2Fsia.6902$$EHTML$$P50$$Gwiley$$H</linktohtml><link.rule.ids>314,776,780,1411,27901,27902,45550,45551</link.rule.ids></links><search><creatorcontrib>Venkataiah, Sunke</creatorcontrib><creatorcontrib>Chandra, S.V. Jagadeesh</creatorcontrib><creatorcontrib>Chalapathi, Uppala</creatorcontrib><creatorcontrib>Ramana, Ch.V.V.</creatorcontrib><creatorcontrib>Uthanna, Suda</creatorcontrib><title>Oxygen partial pressure influenced stoichiometry, structural, electrical, and optical properties of DC reactive sputtered hafnium oxide films</title><title>Surface and interface analysis</title><description>HfO2 films have been deposited on quartz and p‐type Si (100) substrates using DC reactive magnetron sputtering technique by sputtering of hafnium target at different oxygen partial pressures. Variation of cathode potential with oxygen partial pressure was systematically studied. The influence of oxygen partial pressure on chemical composition, crystallographic structure, and optical properties of HfO2 films was systematically investigated. X‐ray photoelectron spectroscopy and energy dispersive X‐ray analysis were employed to determine the chemical composition. The films formed at oxygen partial pressure of 5 × 10−4 Torr were of stoichiometric HfO2. X‐ray diffractometer studies revealed that the films formed at 5 × 10−4 Torr were weakly crystallized with monoclinic structure. Optical bandgap of the HfO2 films increased with increasing oxygen partial pressure. Metal oxide semiconductor structures with configuration of Al/HfO2/p‐Si were fabricated and studied its dielectric and electrical properties. From these studies, it is confirmed that HfO2 film‐based metal oxide semiconductor devices formed at an optimum oxygen partial pressure of 5 × 10−5 Torr showed dielectric constant of 13 with leakage current density of 4.7 × 10−7 A/cm2.</description><subject>Aluminum</subject><subject>Chemical composition</subject><subject>Crystal structure</subject><subject>Crystallization</subject><subject>Crystallography</subject><subject>Dielectric properties</subject><subject>Electrical properties</subject><subject>Hafnium oxide</subject><subject>Leakage current</subject><subject>leakage currents</subject><subject>Magnetron sputtering</subject><subject>Metal oxide semiconductors</subject><subject>Metal oxides</subject><subject>MOS devices</subject><subject>optical bandgap</subject><subject>Optical properties</subject><subject>Oxide coatings</subject><subject>Oxygen</subject><subject>Partial pressure</subject><subject>Photoelectrons</subject><subject>reactive sputtering</subject><subject>Semiconductor devices</subject><subject>Silicon substrates</subject><subject>Stoichiometry</subject><issn>0142-2421</issn><issn>1096-9918</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><recordid>eNp1kE1LAzEQhoMoWKvgTwh48dCtSTb7dSz1q1DoQT0vaTKxKftlktXuj_A_m7VePc0MPDwz8yJ0TcmcEsLunBHztCDsBE0oKdKoKGh-iiaEchYxzug5unBuTwjJ4zydoO_NYXiHBnfCeiMq3FlwrreATaOrHhoJCjvfGrkzbQ3eDrMw2l763opqhqEC6a2RYy8ahdvOj0PQtB0EIzjcany_xBaE9OYTsOt678EG7U7oxvQ1bg9GAdamqt0lOtOicnD1V6fo7fHhdfkcrTdPq-ViHUlWxCzKFVUp2apMi_CEYkkugSdJKnQuEsgUpfmWcyq0FjzO2FZIplmigPKY5QzieIpujt5w50cPzpf7trdNWFkynmVxkRLGA3V7pKRtnbOgy86aWtihpKQcwy5D2OUYdkCjI_plKhj-5cqX1eKX_wGbnIOy</recordid><startdate>202102</startdate><enddate>202102</enddate><creator>Venkataiah, Sunke</creator><creator>Chandra, S.V. Jagadeesh</creator><creator>Chalapathi, Uppala</creator><creator>Ramana, Ch.V.V.</creator><creator>Uthanna, Suda</creator><general>Wiley Subscription Services, Inc</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>202102</creationdate><title>Oxygen partial pressure influenced stoichiometry, structural, electrical, and optical properties of DC reactive sputtered hafnium oxide films</title><author>Venkataiah, Sunke ; Chandra, S.V. Jagadeesh ; Chalapathi, Uppala ; Ramana, Ch.V.V. ; Uthanna, Suda</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c2932-8d1d60bd7fa386d258ce4556af8a5e7d118b441affa4372bac2f25de143282e33</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><topic>Aluminum</topic><topic>Chemical composition</topic><topic>Crystal structure</topic><topic>Crystallization</topic><topic>Crystallography</topic><topic>Dielectric properties</topic><topic>Electrical properties</topic><topic>Hafnium oxide</topic><topic>Leakage current</topic><topic>leakage currents</topic><topic>Magnetron sputtering</topic><topic>Metal oxide semiconductors</topic><topic>Metal oxides</topic><topic>MOS devices</topic><topic>optical bandgap</topic><topic>Optical properties</topic><topic>Oxide coatings</topic><topic>Oxygen</topic><topic>Partial pressure</topic><topic>Photoelectrons</topic><topic>reactive sputtering</topic><topic>Semiconductor devices</topic><topic>Silicon substrates</topic><topic>Stoichiometry</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Venkataiah, Sunke</creatorcontrib><creatorcontrib>Chandra, S.V. Jagadeesh</creatorcontrib><creatorcontrib>Chalapathi, Uppala</creatorcontrib><creatorcontrib>Ramana, Ch.V.V.</creatorcontrib><creatorcontrib>Uthanna, Suda</creatorcontrib><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Surface and interface analysis</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Venkataiah, Sunke</au><au>Chandra, S.V. Jagadeesh</au><au>Chalapathi, Uppala</au><au>Ramana, Ch.V.V.</au><au>Uthanna, Suda</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Oxygen partial pressure influenced stoichiometry, structural, electrical, and optical properties of DC reactive sputtered hafnium oxide films</atitle><jtitle>Surface and interface analysis</jtitle><date>2021-02</date><risdate>2021</risdate><volume>53</volume><issue>2</issue><spage>206</spage><epage>214</epage><pages>206-214</pages><issn>0142-2421</issn><eissn>1096-9918</eissn><abstract>HfO2 films have been deposited on quartz and p‐type Si (100) substrates using DC reactive magnetron sputtering technique by sputtering of hafnium target at different oxygen partial pressures. Variation of cathode potential with oxygen partial pressure was systematically studied. The influence of oxygen partial pressure on chemical composition, crystallographic structure, and optical properties of HfO2 films was systematically investigated. X‐ray photoelectron spectroscopy and energy dispersive X‐ray analysis were employed to determine the chemical composition. The films formed at oxygen partial pressure of 5 × 10−4 Torr were of stoichiometric HfO2. X‐ray diffractometer studies revealed that the films formed at 5 × 10−4 Torr were weakly crystallized with monoclinic structure. Optical bandgap of the HfO2 films increased with increasing oxygen partial pressure. Metal oxide semiconductor structures with configuration of Al/HfO2/p‐Si were fabricated and studied its dielectric and electrical properties. From these studies, it is confirmed that HfO2 film‐based metal oxide semiconductor devices formed at an optimum oxygen partial pressure of 5 × 10−5 Torr showed dielectric constant of 13 with leakage current density of 4.7 × 10−7 A/cm2.</abstract><cop>Bognor Regis</cop><pub>Wiley Subscription Services, Inc</pub><doi>10.1002/sia.6902</doi><tpages>9</tpages></addata></record> |
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| source | Wiley Online Library Journals Frontfile Complete |
| subjects | Aluminum Chemical composition Crystal structure Crystallization Crystallography Dielectric properties Electrical properties Hafnium oxide Leakage current leakage currents Magnetron sputtering Metal oxide semiconductors Metal oxides MOS devices optical bandgap Optical properties Oxide coatings Oxygen Partial pressure Photoelectrons reactive sputtering Semiconductor devices Silicon substrates Stoichiometry |
| title | Oxygen partial pressure influenced stoichiometry, structural, electrical, and optical properties of DC reactive sputtered hafnium oxide films |
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