Performance Assessment of a Cavity on Source ChargePlasmaTFET-Based Biosensor

The promising candidate for designing a highly sensitive biosensor is the tunneling field effect transistor (TFET). In this work, for the first time the performance analysis of a cavity on source charge plasma tunneling field effect transistor (CS-CPTFET) based lable-free biosensor has been proposed. To design the device,charge plasma concept is adapted, where suitable metal workfunctions have been used to create the source and drain regions. The charge plasma technique reduces random dopant fluctuation, thermal budget and steps required for the fabrication. The significant advantage of the proposed device includes the creation of abrupt doping profile at the tunneling junction (source-channel).The achievement of abrupt doping profile at the tunneling junction is responsible for the enhanced sensitivity and suppression of negative conduction (ambipolar) since the cavity is created in the source oxide region of CS-CPTFET biosensor. The response of the proposed biosensor for various biomolecules has been analyzed in terms of band energy variation, electric field, surface potential and transfer characteristics by using Silvaco ATLAS device simulator. Various biomolecules such as uricase (k = 1.54), Glucose oxidase (k = 3.46), APTES (k = 3.57), bacteriophage T7 (k = 6.3), keratin (k = 8) and gelatin (k = 12) have been considered for examining the performance of proposed biosensor.