Excellent Passivation of n‐Type Silicon Surfaces Enabled by Pulsed‐Flow Plasma‐Enhanced Chemical Vapor Deposition of Phosphorus Oxide Capped by Aluminum Oxide

Phosphorus oxide (POx) capped by aluminum oxide (Al2O3), prepared by atomic layer deposition (ALD), has recently been introduced as a surface passivation scheme for planar n‐type FZ silicon. In this work, a fast pulsed‐flow plasma‐enhanced chemical vapor deposition (PECVD) process for the POx layer...

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Veröffentlicht in:	Physica status solidi. PSS-RRL. Rapid research letters 2021-01, Vol.15 (1), p.n/a
Hauptverfasser:	Melskens, Jimmy, Theeuwes, Roel J., Black, Lachlan E., Berghuis, Willem-Jan H., Macco, Bart, Bronsveld, Paula C. P., Kessels, W. M. M.
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum oxide Atomic layer epitaxy Capping Charge density Chemical vapor deposition Passivity Phosphorus phosphorus oxide Phosphorus oxides Photovoltaic cells Silicon Silicon dioxide Solar cells Substrates surface passivation
Online-Zugang:	Volltext
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