A Capacitor‐type Faradaic Junction for Direct Solar Energy Conversion and Storage

Two‐electrode solar rechargeable devices trigger intense attention due to their potential applications in solar energy conversion and storage. However, interface energy barriers lead to severe loss of output voltage and negligible dark discharge current. Therefore, external biases are required for d...

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Veröffentlicht in:Angewandte Chemie 2021-01, Vol.133 (3), p.1410-1415
Hauptverfasser: Wang, Pin, Chen, Xiangtian, Sun, Gengzhi, Wang, Cheng, Luo, Jun, Yang, Liuqing, Lv, Jun, Yao, Yingfang, Luo, Wenjun, Zou, Zhigang
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container_end_page 1415
container_issue 3
container_start_page 1410
container_title Angewandte Chemie
container_volume 133
creator Wang, Pin
Chen, Xiangtian
Sun, Gengzhi
Wang, Cheng
Luo, Jun
Yang, Liuqing
Lv, Jun
Yao, Yingfang
Luo, Wenjun
Zou, Zhigang
description Two‐electrode solar rechargeable devices trigger intense attention due to their potential applications in solar energy conversion and storage. However, interface energy barriers lead to severe loss of output voltage and negligible dark discharge current. Therefore, external biases are required for dark discharge in these devices, limiting their practical applications. Herein, we report a new two‐electrode device of Si/WO3/H2SO4(aq)/C that can work without bias. The device has the highest dark output power among all of the two‐electrode solar rechargeable devices. The device based on a Si/WO3 junction indicates photoinduced adjustable interface barrier height during charge transfer, which can overcome the energy barrier and realize dark discharge without bias. Owing to the interface characteristics, the Si/WO3 is designated as a capacitor‐type Faradaic junction. A Faradaic junction with adjustable barrier height is used for a facile two‐electrode solar rechargeable device under zero bias.
doi_str_mv 10.1002/ange.202011930
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However, interface energy barriers lead to severe loss of output voltage and negligible dark discharge current. Therefore, external biases are required for dark discharge in these devices, limiting their practical applications. Herein, we report a new two‐electrode device of Si/WO3/H2SO4(aq)/C that can work without bias. The device has the highest dark output power among all of the two‐electrode solar rechargeable devices. The device based on a Si/WO3 junction indicates photoinduced adjustable interface barrier height during charge transfer, which can overcome the energy barrier and realize dark discharge without bias. Owing to the interface characteristics, the Si/WO3 is designated as a capacitor‐type Faradaic junction. 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However, interface energy barriers lead to severe loss of output voltage and negligible dark discharge current. Therefore, external biases are required for dark discharge in these devices, limiting their practical applications. Herein, we report a new two‐electrode device of Si/WO3/H2SO4(aq)/C that can work without bias. The device has the highest dark output power among all of the two‐electrode solar rechargeable devices. The device based on a Si/WO3 junction indicates photoinduced adjustable interface barrier height during charge transfer, which can overcome the energy barrier and realize dark discharge without bias. Owing to the interface characteristics, the Si/WO3 is designated as a capacitor‐type Faradaic junction. 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subjects adjustable barrier height
Bias
Capacitors
Charge transfer
Chemistry
Dark current
Discharge
Electrodes
Energy conversion
Energy storage
Faradaic layer
interface charge transfer
photoelectrochemistry
Photovoltaic cells
Solar energy
Solar energy conversion
solar rechargeable device
Sulfuric acid
Tungsten oxides
title A Capacitor‐type Faradaic Junction for Direct Solar Energy Conversion and Storage
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