A Capacitor‐type Faradaic Junction for Direct Solar Energy Conversion and Storage
Two‐electrode solar rechargeable devices trigger intense attention due to their potential applications in solar energy conversion and storage. However, interface energy barriers lead to severe loss of output voltage and negligible dark discharge current. Therefore, external biases are required for d...
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Veröffentlicht in: | Angewandte Chemie 2021-01, Vol.133 (3), p.1410-1415 |
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creator | Wang, Pin Chen, Xiangtian Sun, Gengzhi Wang, Cheng Luo, Jun Yang, Liuqing Lv, Jun Yao, Yingfang Luo, Wenjun Zou, Zhigang |
description | Two‐electrode solar rechargeable devices trigger intense attention due to their potential applications in solar energy conversion and storage. However, interface energy barriers lead to severe loss of output voltage and negligible dark discharge current. Therefore, external biases are required for dark discharge in these devices, limiting their practical applications. Herein, we report a new two‐electrode device of Si/WO3/H2SO4(aq)/C that can work without bias. The device has the highest dark output power among all of the two‐electrode solar rechargeable devices. The device based on a Si/WO3 junction indicates photoinduced adjustable interface barrier height during charge transfer, which can overcome the energy barrier and realize dark discharge without bias. Owing to the interface characteristics, the Si/WO3 is designated as a capacitor‐type Faradaic junction.
A Faradaic junction with adjustable barrier height is used for a facile two‐electrode solar rechargeable device under zero bias. |
doi_str_mv | 10.1002/ange.202011930 |
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A Faradaic junction with adjustable barrier height is used for a facile two‐electrode solar rechargeable device under zero bias.</description><identifier>ISSN: 0044-8249</identifier><identifier>EISSN: 1521-3757</identifier><identifier>DOI: 10.1002/ange.202011930</identifier><language>eng</language><publisher>Weinheim: Wiley Subscription Services, Inc</publisher><subject>adjustable barrier height ; Bias ; Capacitors ; Charge transfer ; Chemistry ; Dark current ; Discharge ; Electrodes ; Energy conversion ; Energy storage ; Faradaic layer ; interface charge transfer ; photoelectrochemistry ; Photovoltaic cells ; Solar energy ; Solar energy conversion ; solar rechargeable device ; Sulfuric acid ; Tungsten oxides</subject><ispartof>Angewandte Chemie, 2021-01, Vol.133 (3), p.1410-1415</ispartof><rights>2020 Wiley‐VCH GmbH</rights><rights>2021 Wiley‐VCH GmbH</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c1620-99e7a1114907113ea5365986ca3d10ee51e8955e0f521b92db6c7292246c4e443</citedby><cites>FETCH-LOGICAL-c1620-99e7a1114907113ea5365986ca3d10ee51e8955e0f521b92db6c7292246c4e443</cites><orcidid>0000-0001-6760-6929</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1002%2Fange.202011930$$EPDF$$P50$$Gwiley$$H</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1002%2Fange.202011930$$EHTML$$P50$$Gwiley$$H</linktohtml><link.rule.ids>314,776,780,1411,27901,27902,45550,45551</link.rule.ids></links><search><creatorcontrib>Wang, Pin</creatorcontrib><creatorcontrib>Chen, Xiangtian</creatorcontrib><creatorcontrib>Sun, Gengzhi</creatorcontrib><creatorcontrib>Wang, Cheng</creatorcontrib><creatorcontrib>Luo, Jun</creatorcontrib><creatorcontrib>Yang, Liuqing</creatorcontrib><creatorcontrib>Lv, Jun</creatorcontrib><creatorcontrib>Yao, Yingfang</creatorcontrib><creatorcontrib>Luo, Wenjun</creatorcontrib><creatorcontrib>Zou, Zhigang</creatorcontrib><title>A Capacitor‐type Faradaic Junction for Direct Solar Energy Conversion and Storage</title><title>Angewandte Chemie</title><description>Two‐electrode solar rechargeable devices trigger intense attention due to their potential applications in solar energy conversion and storage. However, interface energy barriers lead to severe loss of output voltage and negligible dark discharge current. Therefore, external biases are required for dark discharge in these devices, limiting their practical applications. Herein, we report a new two‐electrode device of Si/WO3/H2SO4(aq)/C that can work without bias. The device has the highest dark output power among all of the two‐electrode solar rechargeable devices. The device based on a Si/WO3 junction indicates photoinduced adjustable interface barrier height during charge transfer, which can overcome the energy barrier and realize dark discharge without bias. Owing to the interface characteristics, the Si/WO3 is designated as a capacitor‐type Faradaic junction.
A Faradaic junction with adjustable barrier height is used for a facile two‐electrode solar rechargeable device under zero bias.</description><subject>adjustable barrier height</subject><subject>Bias</subject><subject>Capacitors</subject><subject>Charge transfer</subject><subject>Chemistry</subject><subject>Dark current</subject><subject>Discharge</subject><subject>Electrodes</subject><subject>Energy conversion</subject><subject>Energy storage</subject><subject>Faradaic layer</subject><subject>interface charge transfer</subject><subject>photoelectrochemistry</subject><subject>Photovoltaic cells</subject><subject>Solar energy</subject><subject>Solar energy conversion</subject><subject>solar rechargeable device</subject><subject>Sulfuric acid</subject><subject>Tungsten oxides</subject><issn>0044-8249</issn><issn>1521-3757</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><recordid>eNqFkLFOwzAURS0EEqWwMltiTnnPsZN4rEpbQBUMhdlynZcqVYmDk4Ky8Ql8I19CqiIYmd5yzr16l7FLhBECiGtbrWkkQACijuGIDVAJjOJUpcdsACBllAmpT9lZ02wAIBGpHrDlmE9sbV3Z-vD18dl2NfGZDTa3peP3u8q1pa944QO_KQO5li_91gY-rSisOz7x1RuFZo_YKufLPsSu6ZydFHbb0MXPHbLn2fRpchstHud3k_EicpgIiLSm1CKi1JAixmRVnCidJc7GOQKRQsq0UgRF_8dKi3yVuFRoIWTiJEkZD9nVIbcO_nVHTWs2fheqvtIImSaZ0qCxp0YHygXfNIEKU4fyxYbOIJj9cGY_nPkdrhf0QXgvt9T9Q5vxw3z6534Di6Nw-g</recordid><startdate>20210118</startdate><enddate>20210118</enddate><creator>Wang, Pin</creator><creator>Chen, Xiangtian</creator><creator>Sun, Gengzhi</creator><creator>Wang, Cheng</creator><creator>Luo, Jun</creator><creator>Yang, Liuqing</creator><creator>Lv, Jun</creator><creator>Yao, Yingfang</creator><creator>Luo, Wenjun</creator><creator>Zou, Zhigang</creator><general>Wiley Subscription Services, Inc</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0001-6760-6929</orcidid></search><sort><creationdate>20210118</creationdate><title>A Capacitor‐type Faradaic Junction for Direct Solar Energy Conversion and Storage</title><author>Wang, Pin ; Chen, Xiangtian ; Sun, Gengzhi ; Wang, Cheng ; Luo, Jun ; Yang, Liuqing ; Lv, Jun ; Yao, Yingfang ; Luo, Wenjun ; Zou, Zhigang</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c1620-99e7a1114907113ea5365986ca3d10ee51e8955e0f521b92db6c7292246c4e443</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><topic>adjustable barrier height</topic><topic>Bias</topic><topic>Capacitors</topic><topic>Charge transfer</topic><topic>Chemistry</topic><topic>Dark current</topic><topic>Discharge</topic><topic>Electrodes</topic><topic>Energy conversion</topic><topic>Energy storage</topic><topic>Faradaic layer</topic><topic>interface charge transfer</topic><topic>photoelectrochemistry</topic><topic>Photovoltaic cells</topic><topic>Solar energy</topic><topic>Solar energy conversion</topic><topic>solar rechargeable device</topic><topic>Sulfuric acid</topic><topic>Tungsten oxides</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Wang, Pin</creatorcontrib><creatorcontrib>Chen, Xiangtian</creatorcontrib><creatorcontrib>Sun, Gengzhi</creatorcontrib><creatorcontrib>Wang, Cheng</creatorcontrib><creatorcontrib>Luo, Jun</creatorcontrib><creatorcontrib>Yang, Liuqing</creatorcontrib><creatorcontrib>Lv, Jun</creatorcontrib><creatorcontrib>Yao, Yingfang</creatorcontrib><creatorcontrib>Luo, Wenjun</creatorcontrib><creatorcontrib>Zou, Zhigang</creatorcontrib><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Angewandte Chemie</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Wang, Pin</au><au>Chen, Xiangtian</au><au>Sun, Gengzhi</au><au>Wang, Cheng</au><au>Luo, Jun</au><au>Yang, Liuqing</au><au>Lv, Jun</au><au>Yao, Yingfang</au><au>Luo, Wenjun</au><au>Zou, Zhigang</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A Capacitor‐type Faradaic Junction for Direct Solar Energy Conversion and Storage</atitle><jtitle>Angewandte Chemie</jtitle><date>2021-01-18</date><risdate>2021</risdate><volume>133</volume><issue>3</issue><spage>1410</spage><epage>1415</epage><pages>1410-1415</pages><issn>0044-8249</issn><eissn>1521-3757</eissn><abstract>Two‐electrode solar rechargeable devices trigger intense attention due to their potential applications in solar energy conversion and storage. However, interface energy barriers lead to severe loss of output voltage and negligible dark discharge current. Therefore, external biases are required for dark discharge in these devices, limiting their practical applications. Herein, we report a new two‐electrode device of Si/WO3/H2SO4(aq)/C that can work without bias. The device has the highest dark output power among all of the two‐electrode solar rechargeable devices. The device based on a Si/WO3 junction indicates photoinduced adjustable interface barrier height during charge transfer, which can overcome the energy barrier and realize dark discharge without bias. Owing to the interface characteristics, the Si/WO3 is designated as a capacitor‐type Faradaic junction.
A Faradaic junction with adjustable barrier height is used for a facile two‐electrode solar rechargeable device under zero bias.</abstract><cop>Weinheim</cop><pub>Wiley Subscription Services, Inc</pub><doi>10.1002/ange.202011930</doi><tpages>6</tpages><orcidid>https://orcid.org/0000-0001-6760-6929</orcidid></addata></record> |
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subjects | adjustable barrier height Bias Capacitors Charge transfer Chemistry Dark current Discharge Electrodes Energy conversion Energy storage Faradaic layer interface charge transfer photoelectrochemistry Photovoltaic cells Solar energy Solar energy conversion solar rechargeable device Sulfuric acid Tungsten oxides |
title | A Capacitor‐type Faradaic Junction for Direct Solar Energy Conversion and Storage |
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