Self-Organization of Ge(Si) Nanoisland Groups on Pit-Patterned Si(100) Substrates

Space-arranged arrays of pits on Si(001) substrates were prepared using electron-beam lithography and plasma chemical etching. The positions of pits were arrange to the square and hexagonal lattices with a varying spacing. It was shown that the location of three-dimensional (3D) Ge nanoislands subse...

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Veröffentlicht in:	Semiconductors (Woodbury, N.Y.) N.Y.), 2020-12, Vol.54 (14), p.1866-1868
Hauptverfasser:	Smagina, Zh. V., Zinoviev, V. A., Rudin, S. A., Rodyakina, E. E., Novikov, P. L., Nenashev, A. V., Dvurechenskii, A. V.
Format:	Artikel
Sprache:	eng
Schlagworte:	Chemical etching Electron beam lithography Germanium Lattices Magnetic Materials Magnetism Nanostructure Technology Nucleation Physics Physics and Astronomy Pits Silicon substrates
Online-Zugang:	Volltext
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